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Manufacturer:
Toshiba Semiconductor and StorageDescription:
UMOS10 TO-220AB 80V 3.3MOHM
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TYPE | DESCRIPTION |
---|---|
Manufacturer | Toshiba Semiconductor and Storage |
Series | U-MOSX-H |
Package / Case | TO-220-3 |
Mounting Type | Through Hole |
Operating Temperature | 175°C |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Rds On (Max) @ Id, Vgs | 3.3mOhm @ 50A, 10V |
Power Dissipation (Max) | 230W (Tc) |
Vgs(th) (Max) @ Id | 3.5V @ 1.3mA |
Supplier Device Package | TO-220 |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Vgs (Max) | ±20V |
Drain to Source Voltage (Vdss) | 80 V |
Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 7670 pF @ 40 V |
TK3R3E08QM,S1X - From Manufacturer: Toshiba Semiconductor and Storage, it is an UMOS10 TO-220AB 80V 3.3MOHM, part of Discrete Semiconductor Products, Transistors, FETs, MOSFETs, Single FETs, MOSFETs. TK3R3E08QM,S1X stock status: need to confirm with us, contact us! Quick Reply.
Toshiba's MOSFETs with UMOS-X trench structure offer low RDS(ON) and conduction loss, reducing power consumption. These 80 V MOSFETs have low gate switch charge and a low figure of merit.