MDmesh™ DM2 Series, Single FETs, MOSFETs

Results:
77
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
Package / Case
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Operating Temperature
Grade
Mounting Type
Qualification
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Technology
Results remaining77
Applied Filters:
MDmesh™ DM2
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseSupplier Device PackageTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Gate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)QualificationGrade
STW58N60DM2AG
MOSFET N-CH 600V 50A TO247
1+
$10.6479
5+
$10.0563
10+
$9.4648
Quantity
59,588 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
MOSFET (Metal Oxide)
-
50A (Tc)
60mOhm @ 25A, 10V
5V @ 250µA
MDmesh™ DM2
600 V
10V
90 nC @ 10 V
±25V
4100 pF @ 100 V
360W (Tc)
AEC-Q101
Automotive
STW33N60DM2
MOSFET N-CH 600V 24A TO247
1+
$8.8732
5+
$8.3803
10+
$7.8873
Quantity
52,800 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
MOSFET (Metal Oxide)
-
24A (Tc)
130mOhm @ 12A, 10V
5V @ 250µA
MDmesh™ DM2
600 V
10V
43 nC @ 10 V
±25V
1870 pF @ 100 V
190W (Tc)
-
-
STB33N60DM2
MOSFET N-CH 600V 24A D2PAK
1+
$3.8028
5+
$3.5915
10+
$3.3803
Quantity
39,322 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
24A (Tc)
130mOhm @ 12A, 10V
5V @ 250µA
MDmesh™ DM2
600 V
10V
43 nC @ 10 V
±25V
1870 pF @ 100 V
190W (Tc)
-
-
STD8N60DM2
MOSFET N-CH 600V 8A DPAK
1+
$5.0704
5+
$4.7887
10+
$4.5070
Quantity
32,500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
MOSFET (Metal Oxide)
-
8A (Tc)
600mOhm @ 4A, 10V
5V @ 100µA
MDmesh™ DM2
600 V
10V
13.5 nC @ 10 V
±30V
375 pF @ 100 V
85W (Tc)
-
-
STB28N60DM2
MOSFET N-CH 600V 21A D2PAK
1+
$11.4085
5+
$10.7746
10+
$10.1408
Quantity
16,389 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
21A (Tc)
160mOhm @ 10.5A, 10V
5V @ 250µA
MDmesh™ DM2
600 V
10V
34 nC @ 10 V
±25V
1500 pF @ 100 V
170W (Tc)
-
-
STL24N60DM2
MOSFET N-CH 600V 15A PWRFLAT HV
1+
$22.3099
5+
$21.0704
10+
$19.8310
Quantity
15,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerVDFN
PowerFlat™ (8x8) HV
MOSFET (Metal Oxide)
-
15A (Tc)
220mOhm @ 9A, 10V
5V @ 250µA
MDmesh™ DM2
600 V
10V
29 nC @ 10 V
±25V
1055 pF @ 100 V
125W (Tc)
-
-
STP45N60DM2AG
MOSFET N-CH 600V 34A TO220
1+
$7.6056
5+
$7.1831
10+
$6.7606
Quantity
13,550 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220
MOSFET (Metal Oxide)
-
34A (Tc)
93mOhm @ 17A, 10V
5V @ 250µA
MDmesh™ DM2
600 V
10V
56 nC @ 10 V
±25V
2500 pF @ 100 V
250W (Tc)
AEC-Q101
Automotive
STP33N60DM2
MOSFET N-CH 600V 24A TO220
1+
$3.8028
5+
$3.5915
10+
$3.3803
Quantity
10,430 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220
MOSFET (Metal Oxide)
-
24A (Tc)
130mOhm @ 12A, 10V
5V @ 250µA
MDmesh™ DM2
600 V
10V
43 nC @ 10 V
±25V
1870 pF @ 100 V
190W (Tc)
-
-
STP28N60DM2
MOSFET N-CH 600V 21A TO220
1+
$5.0704
5+
$4.7887
10+
$4.5070
Quantity
10,395 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220
MOSFET (Metal Oxide)
-
21A (Tc)
160mOhm @ 10.5A, 10V
5V @ 250µA
MDmesh™ DM2
600 V
10V
34 nC @ 10 V
±25V
1500 pF @ 100 V
170W (Tc)
-
-
STB35N60DM2
MOSFET N-CH 600V 28A D2PAK
1+
$3.1690
5+
$2.9930
10+
$2.8169
Quantity
10,278 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
28A (Tc)
110mOhm @ 14A, 10V
5V @ 250µA
MDmesh™ DM2
600 V
10V
54 nC @ 10 V
±25V
2400 pF @ 100 V
210W (Tc)
-
-
STWA48N60DM2
MOSFET N-CH 600V 40A TO247
1+
$7.6056
5+
$7.1831
10+
$6.7606
Quantity
7,911 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247 Long Leads
MOSFET (Metal Oxide)
-
40A (Tc)
79mOhm @ 20A, 10V
5V @ 250µA
MDmesh™ DM2
600 V
10V
70 nC @ 10 V
±25V
3250 pF @ 100 V
300W (Tc)
-
-
STD6N60DM2
MOSFET N-CH 600V 5A DPAK
1+
$6.3380
5+
$5.9859
10+
$5.6338
Quantity
6,946 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252 (DPAK)
MOSFET (Metal Oxide)
-
5A (Tc)
1.1Ohm @ 2.5A, 10V
4.75V @ 250µA
MDmesh™ DM2
600 V
10V
6.2 nC @ 10 V
±25V
274 pF @ 100 V
60W (Tc)
-
-
STW56N60DM2
MOSFET N-CH 600V 50A TO247
1+
$8.8732
5+
$8.3803
10+
$7.8873
Quantity
6,927 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
MOSFET (Metal Oxide)
-
50A (Tc)
60mOhm @ 25A, 10V
5V @ 250µA
MDmesh™ DM2
600 V
10V
90 nC @ 10 V
±25V
4100 pF @ 100 V
360W (Tc)
-
-
STL13N60DM2
MOSFET N-CH 600V 8A POWERFLAT HV
1+
$76.0563
5+
$71.8310
10+
$67.6056
Quantity
6,500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
150°C (TJ)
N-Channel
8-PowerVDFN
PowerFlat™ (5x6) HV
MOSFET (Metal Oxide)
-
8A (Tc)
370mOhm @ 4A, 10V
5V @ 250µA
MDmesh™ DM2
600 V
10V
19 nC @ 10 V
±25V
730 pF @ 100 V
52W (Tc)
-
-
STW50N65DM2AG
MOSFET N-CH 650V 28A TO247
1+
$10.1408
5+
$9.5775
10+
$9.0141
Quantity
5,944 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
MOSFET (Metal Oxide)
-
28A (Tc)
87mOhm @ 19A, 10V
5V @ 250µA
MDmesh™ DM2
650 V
10V
70 nC @ 10 V
±25V
3200 pF @ 100 V
300W (Tc)
AEC-Q101
Automotive
STD13N60DM2
MOSFET N-CH 600V 11A DPAK
1+
$2.0282
5+
$1.9155
10+
$1.8028
Quantity
3,925 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
MOSFET (Metal Oxide)
-
11A (Tc)
365mOhm @ 5.5A, 10V
5V @ 250µA
MDmesh™ DM2
600 V
10V
19 nC @ 10 V
±25V
730 pF @ 100 V
110W (Tc)
-
-
STB43N60DM2
MOSFET N-CH 600V 34A D2PAK
1+
$7.6056
5+
$7.1831
10+
$6.7606
Quantity
3,441 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
34A (Tc)
93mOhm @ 17A, 10V
5V @ 250µA
MDmesh™ DM2
600 V
10V
56 nC @ 10 V
±25V
2500 pF @ 100 V
250W (Tc)
-
-
STW43N60DM2
MOSFET N-CH 600V 34A TO247
1+
$3.5493
5+
$3.3521
10+
$3.1549
Quantity
2,970 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
MOSFET (Metal Oxide)
-
34A (Tc)
93mOhm @ 17A, 10V
5V @ 250µA
MDmesh™ DM2
600 V
10V
56 nC @ 10 V
±25V
2500 pF @ 100 V
250W (Tc)
-
-
STB45N60DM2AG
MOSFET N-CH 600V 34A D2PAK
1+
$16.4789
5+
$15.5634
10+
$14.6479
Quantity
2,841 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
34A (Tc)
90mOhm @ 17A, 10V
5V @ 250µA
MDmesh™ DM2
600 V
10V
56 nC @ 10 V
±25V
2500 pF @ 100 V
250W (Tc)
AEC-Q101
Automotive
STP35N65DM2
MOSFET N-CH 650V 32A TO220
1+
$6.3380
5+
$5.9859
10+
$5.6338
Quantity
2,606 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220
MOSFET (Metal Oxide)
-
32A (Tc)
110mOhm @ 16A, 10V
5V @ 250µA
MDmesh™ DM2
650 V
10V
56.3 nC @ 10 V
±25V
2540 pF @ 100 V
250W (Tc)
-
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.