DeepGATE™, STripFET™ Series, Single FETs, MOSFETs

Results:
12
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Supplier Device Package
Package / Case
Gate Charge (Qg) (Max) @ Vgs
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Operating Temperature
Mounting Type
FET Feature
FET Type
Grade
Vgs(th) (Max) @ Id
Qualification
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Results remaining12
Applied Filters:
DeepGATE™, STripFET™
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypePackage / CaseSupplier Device PackageOperating TemperatureGradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
STD70N10F4
MOSFET N-CH 100V 60A DPAK
1+
$1.3944
5+
$1.3169
10+
$1.2394
Quantity
50,717 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
60A (Tc)
4V @ 250µA
DeepGATE™, STripFET™
100 V
10V
19.5mOhm @ 30A, 10V
85 nC @ 10 V
±20V
5800 pF @ 25 V
125W (Tc)
-
STS5N15F4
MOSFET N-CH 150V 5A 8SO
1+
$1.7746
5+
$1.6761
10+
$1.5775
Quantity
8,574 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-SOIC (0.154", 3.90mm Width)
8-SOIC
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
5A (Tc)
4V @ 250µA
DeepGATE™, STripFET™
150 V
10V
63mOhm @ 2.5A, 10V
48 nC @ 10 V
±20V
2710 pF @ 25 V
2.5W (Tc)
-
STP80N70F4
MOSFET N-CH 68V 85A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
85A (Tc)
4V @ 250µA
DeepGATE™, STripFET™
68 V
10V
9.8mOhm @ 40A, 10V
90 nC @ 10 V
±20V
5600 pF @ 25 V
150W (Tc)
-
STP75N75F4
MOSFET N-CH 75V 78A TO220
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
78A (Tc)
4V @ 250µA
DeepGATE™, STripFET™
75 V
10V
11mOhm @ 39A, 10V
76 nC @ 10 V
±20V
5015 pF @ 25 V
150W (Tc)
-
STP78N75F4
MOSFET N-CH 75V 78A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
78A (Tc)
4V @ 250µA
DeepGATE™, STripFET™
75 V
10V
11mOhm @ 39A, 10V
76 nC @ 10 V
±20V
5015 pF @ 25 V
150W (Tc)
-
STP70N10F4
MOSFET N-CH 100V 65A TO220-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
65A (Tc)
4V @ 250µA
DeepGATE™, STripFET™
100 V
10V
19.5mOhm @ 30A, 10V
85 nC @ 10 V
±20V
5800 pF @ 25 V
150W (Tc)
-
STW70N10F4
MOSFET N-CH 100V 65A TO247-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
TO-247-3
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
65A (Tc)
4V @ 250µA
DeepGATE™, STripFET™
100 V
10V
19.5mOhm @ 30A, 10V
85 nC @ 10 V
±20V
5800 pF @ 25 V
150W (Tc)
-
STL25N15F4
MOSFET N-CH 150V 25A POWERFLAT
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
PowerFlat™ (5x6)
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
25A (Tc)
4V @ 250µA
DeepGATE™, STripFET™
150 V
10V
63mOhm @ 3A, 10V
48 nC @ 10 V
±20V
2710 pF @ 25 V
80W (Tc)
-
STB70N10F4
MOSFET N-CH 100V 65A D2PAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
65A (Tc)
4V @ 250µA
DeepGATE™, STripFET™
100 V
10V
19.5mOhm @ 30A, 10V
85 nC @ 10 V
±20V
5800 pF @ 25 V
150W (Tc)
-
STD78N75F4
MOSFET N-CH 75V 78A DPAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
78A (Tc)
4V @ 250µA
DeepGATE™, STripFET™
75 V
10V
11mOhm @ 35A, 10V
76 nC @ 10 V
±20V
5015 pF @ 25 V
125W (Tc)
-
STP90N55F4
MOSFET N-CH 55V 90A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
90A (Tc)
4V @ 250µA
DeepGATE™, STripFET™
55 V
10V
8mOhm @ 45A, 10V
90 nC @ 10 V
±20V
4800 pF @ 25 V
150W (Tc)
-
STP165N10F4
MOSFET N-CH 100V 120A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
120A (Tc)
4V @ 250µA
DeepGATE™, STripFET™
100 V
10V
5.5mOhm @ 60A, 10V
180 nC @ 10 V
±20V
10500 pF @ 25 V
315W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.