AlphaMOS Series, Single FETs, MOSFETs

Results:
69
Manufacturer
Series
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Vgs(th) (Max) @ Id
Package / Case
Supplier Device Package
Drain to Source Voltage (Vdss)
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
FET Type
FET Feature
Mounting Type
Technology
Grade
Qualification
Results remaining69
Applied Filters:
AlphaMOS
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseDrain to Source Voltage (Vdss)GradeSupplier Device PackageTechnologySeriesFET FeatureVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
AON7524
MOSFET N-CH 30V 25A/28A 8DFN
1+
$0.2789
5+
$0.2634
10+
$0.2479
Quantity
90,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerVDFN
30 V
-
8-DFN-EP (3x3)
MOSFET (Metal Oxide)
AlphaMOS
-
1.2V @ 250µA
25A (Ta), 28A (Tc)
2.5V, 10V
3.3mOhm @ 20A, 10V
50 nC @ 10 V
±12V
2250 pF @ 15 V
3.1W (Ta), 32W (Tc)
-
AOD526_DELTA
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
30 V
TO-252 (DPAK)
MOSFET (Metal Oxide)
AlphaMOS
-
2.4V @ 250µA
50A (Tc)
4.5V, 10V
5mOhm @ 20A, 10V
33 nC @ 10 V
±20V
1550 pF @ 15 V
2.5W (Ta), 50W (Tc)
AON6504_001
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-
-
8-PowerSMD, Flat Leads
-
8-DFN (5x6)
-
AlphaMOS
-
-
85A (Tc)
-
-
-
-
-
-
AON6758_104
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-VDFN Exposed Pad
30 V
8-DFN (5x6)
MOSFET (Metal Oxide)
AlphaMOS
Schottky Diode (Body)
2.4V @ 250µA
27A (Ta), 32A (Tc)
4.5V, 10V
3.6mOhm @ 20A, 10V
40 nC @ 10 V
±20V
1975 pF @ 15 V
4.1W (Ta), 41W (Tc)
AON6758_103
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-VDFN Exposed Pad
30 V
8-DFN (5x6)
MOSFET (Metal Oxide)
AlphaMOS
Schottky Diode (Body)
2.4V @ 250µA
27A (Ta), 32A (Tc)
4.5V, 10V
3.6mOhm @ 20A, 10V
40 nC @ 10 V
±20V
1975 pF @ 15 V
4.1W (Ta), 41W (Tc)
AON6758_102
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-VDFN Exposed Pad
30 V
8-DFN (5x6)
MOSFET (Metal Oxide)
AlphaMOS
Schottky Diode (Body)
2.4V @ 250µA
27A (Ta), 32A (Tc)
4.5V, 10V
3.6mOhm @ 20A, 10V
40 nC @ 10 V
±20V
1975 pF @ 15 V
4.1W (Ta), 41W (Tc)
AON6758_101
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-VDFN Exposed Pad
30 V
8-DFN (5x6)
MOSFET (Metal Oxide)
AlphaMOS
Schottky Diode (Body)
2.4V @ 250µA
27A (Ta), 32A (Tc)
4.5V, 10V
3.6mOhm @ 20A, 10V
40 nC @ 10 V
±20V
1975 pF @ 15 V
4.1W (Ta), 41W (Tc)
AON6756_101
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-VDFN Exposed Pad
30 V
8-DFN (5x6)
MOSFET (Metal Oxide)
AlphaMOS
Schottky Diode (Body)
2.4V @ 250µA
36A (Tc)
4.5V, 10V
2.4mOhm @ 20A, 10V
64 nC @ 10 V
±20V
2796 pF @ 15 V
7.3W (Ta), 83W (Tc)
AON6566_MSI
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerSMD, Flat Leads
30 V
8-DFN (5x6)
MOSFET (Metal Oxide)
AlphaMOS
-
2.4V @ 250µA
29A (Ta), 32A (Tc)
4.5V, 10V
5mOhm @ 20A, 10V
33 nC @ 10 V
±20V
1550 pF @ 15 V
6W (Ta), 25W (Tc)
AON6524_001
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-VDFN Exposed Pad
30 V
8-DFN (5x6)
MOSFET (Metal Oxide)
AlphaMOS
-
2.3V @ 250µA
27A (Ta), 68A (Tc)
4.5V, 10V
5mOhm @ 20A, 10V
23 nC @ 10 V
±20V
1900 pF @ 15 V
5.7W (Ta), 35.5W (Tc)
AO4354_101
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-SOIC (0.154", 3.90mm Width)
30 V
8-SOIC
MOSFET (Metal Oxide)
AlphaMOS
-
2.2V @ 250µA
23A (Ta)
4.5V, 10V
3.7mOhm @ 20A, 10V
49 nC @ 10 V
±20V
2010 pF @ 15 V
3.1W (Ta)
AON6360P
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerSMD, Flat Leads
30 V
8-DFN (5x6)
MOSFET (Metal Oxide)
AlphaMOS
-
2.2V @ 250µA
36A (Ta), 85A (Tc)
4.5V, 10V
3mOhm @ 20A, 10V
24 nC @ 10 V
±20V
1590 pF @ 15 V
6.2W (Ta), 42W (Tc)
AON7752_101
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerVDFN
30 V
8-DFN-EP (3x3)
MOSFET (Metal Oxide)
AlphaMOS
-
2.5V @ 250µA
15A (Ta), 16A (Tc)
4.5V, 10V
8.2mOhm @ 16A, 10V
15 nC @ 10 V
±20V
605 pF @ 15 V
3.1W (Ta), 20W (Tc)
AON7548_101
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerVDFN
30 V
8-DFN-EP (3x3)
MOSFET (Metal Oxide)
AlphaMOS
-
2.5V @ 250µA
14A (Ta), 24A (Tc)
4.5V, 10V
8.8mOhm @ 20A, 10V
22 nC @ 10 V
±20V
1086 pF @ 15 V
3.1W (Ta), 23W (Tc)
AON6508_101
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerSMD, Flat Leads
30 V
8-DFN (5x6)
MOSFET (Metal Oxide)
AlphaMOS
-
2.2V @ 250µA
29A (Ta), 32A (Tc)
4.5V, 10V
3.2mOhm @ 20A, 10V
49 nC @ 10 V
±20V
2010 pF @ 15 V
4.2W (Ta), 41W (Tc)
AOD206_030
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
30 V
TO-252 (DPAK)
MOSFET (Metal Oxide)
AlphaMOS
-
2.4V @ 250µA
18A (Ta), 46A (Tc)
4.5V, 10V
5mOhm @ 20A, 4.5V
33 nC @ 10 V
±20V
1333 pF @ 15 V
2.5W (Ta), 50W (Tc)
AOI206_002
MOSFET N-CH 30V 18A/46A TO251A
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
N-Channel
TO-251-3 Short Leads, IPak, TO-251AA
30 V
TO-251A
MOSFET (Metal Oxide)
AlphaMOS
-
2.4V @ 250µA
18A (Ta), 46A (Tc)
4.5V, 10V
5mOhm @ 20A, 10V
33 nC @ 10 V
±20V
1333 pF @ 15 V
2.5W (Ta), 50W (Tc)
AOD206_001
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
30 V
TO-252 (DPAK)
MOSFET (Metal Oxide)
AlphaMOS
-
2.4V @ 250µA
18A (Ta), 46A (Tc)
4.5V, 10V
5mOhm @ 20A, 10V
33 nC @ 10 V
±20V
1333 pF @ 15 V
2.5W (Ta), 50W (Tc)
AON7758_001
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerWDFN
30 V
8-DFN-EP (3.3x3.3)
MOSFET (Metal Oxide)
AlphaMOS
-
2V @ 250µA
36A (Ta), 75A (Tc)
4.5V, 10V
1.85mOhm @ 20A, 10V
100 nC @ 10 V
±12V
5200 pF @ 15 V
4.2W (Ta), 34W (Tc)
AON6504_002
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerSMD, Flat Leads
30 V
8-DFN (5x6)
MOSFET (Metal Oxide)
AlphaMOS
-
2.1V @ 250µA
51A (Ta), 85A (Tc)
4.5V, 10V
2.1mOhm @ 20A, 10V
60 nC @ 10 V
±20V
2719 pF @ 15 V
7.3W (Ta), 83W (Tc)

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.