Polar P3™ Series, Single FETs, MOSFETs

Results:
17
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Vgs(th) (Max) @ Id
Operating Temperature
FET Type
Mounting Type
FET Feature
Grade
Qualification
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Results remaining17
Applied Filters:
Polar P3™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseSupplier Device PackageFET TypeGradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
IXTP36P15P
MOSFET P-CH 150V 36A TO220AB
1+
$10.1408
5+
$9.5775
10+
$9.0141
Quantity
1,900 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
TO-220-3
P-Channel
-
MOSFET (Metal Oxide)
-
36A (Tc)
4.5V @ 250µA
Polar P3™
150 V
10V
110mOhm @ 18A, 10V
55 nC @ 10 V
±20V
3100 pF @ 25 V
300W (Tc)
-
IXTP3N100P
MOSFET N-CH 1000V 3A TO220AB
1+
$5.0704
5+
$4.7887
10+
$4.5070
Quantity
1,134 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
TO-220-3
N-Channel
-
MOSFET (Metal Oxide)
-
3A (Tc)
4.5V @ 250µA
Polar P3™
1000 V
10V
4.8Ohm @ 1.5A, 10V
39 nC @ 10 V
±20V
1100 pF @ 25 V
125W (Tc)
-
IXTX4N300P3HV
MOSFET N-CH 3000V 4A TO247PLUSHV
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Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3 Variant
TO-247PLUS-HV
N-Channel
-
MOSFET (Metal Oxide)
-
4A (Tc)
5V @ 250µA
Polar P3™
3000 V
10V
12.5Ohm @ 2A, 10V
139 nC @ 10 V
±20V
3680 pF @ 25 V
960W (Tc)
-
IXTH06N220P3HV
MOSFET N-CH 2200V 600MA TO247HV
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3 Variant
TO-247HV
N-Channel
-
MOSFET (Metal Oxide)
-
600mA (Tc)
4V @ 250µA
Polar P3™
2200 V
10V
80Ohm @ 300mA, 10V
10.4 nC @ 10 V
±20V
290 pF @ 25 V
104W (Tc)
-
IXTH3N200P3HV
MOSFET N-CH 2000V 3A TO247
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
TO-247 (IXTH)
N-Channel
-
MOSFET (Metal Oxide)
-
3A (Tc)
5V @ 250µA
Polar P3™
2000 V
10V
8Ohm @ 1.5A, 10V
70 nC @ 10 V
±20V
1860 pF @ 25 V
520W (Tc)
-
IXTH1N300P3HV
MOSFET N-CH 3000V 1A TO247HV
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3 Variant
TO-247HV
N-Channel
-
MOSFET (Metal Oxide)
-
1A (Tc)
4V @ 250µA
Polar P3™
3000 V
10V
50Ohm @ 500mA, 10V
30.6 nC @ 10 V
±20V
895 pF @ 25 V
195W (Tc)
-
IXTT2N300P3HV
MOSFET N-CH 3000V 2A TO268
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 155°C (TJ)
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
TO-268HV (IXTT)
N-Channel
-
MOSFET (Metal Oxide)
-
2A (Tc)
5V @ 250µA
Polar P3™
3000 V
10V
21Ohm @ 1A, 10V
73 nC @ 10 V
±20V
1890 pF @ 25 V
520W (Tc)
-
IXTH2N300P3HV
MOSFET N-CH 3000V 2A TO247HV
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3 Variant
TO-247HV
N-Channel
-
MOSFET (Metal Oxide)
-
2A (Tc)
5V @ 250µA
Polar P3™
3000 V
10V
21Ohm @ 1A, 10V
73 nC @ 10 V
±20V
1890 pF @ 25 V
520W (Tc)
-
IXTX6N200P3HV
MOSFET N-CH 2000V 6A TO247PLUSHV
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3 Variant
TO-247PLUS-HV
N-Channel
-
MOSFET (Metal Oxide)
-
6A (Tc)
5V @ 250µA
Polar P3™
2000 V
10V
4Ohm @ 3A, 10V
143 nC @ 10 V
±20V
3700 pF @ 25 V
960W (Tc)
-
IXTH04N300P3HV
MOSFET N-CH 3000V 400MA TO247HV
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3 Variant
TO-247HV
N-Channel
-
MOSFET (Metal Oxide)
-
400mA (Tc)
4V @ 250µA
Polar P3™
3000 V
10V
190Ohm @ 200mA, 10V
13 nC @ 10 V
±20V
283 pF @ 25 V
104W (Tc)
-
IXTF2N300P3
MOSFET N-CH 3000V 1.6A I4PAC
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
ISOPLUSi5-Pak™
ISOPLUS i4-PAC™
N-Channel
-
MOSFET (Metal Oxide)
-
1.6A (Tc)
5V @ 250µA
Polar P3™
3000 V
10V
21Ohm @ 1A, 10V
73 nC @ 10 V
±20V
1890 pF @ 25 V
160W (Tc)
-
IXTH1N200P3
MOSFET N-CH 2000V 1A TO247
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
TO-247 (IXTH)
N-Channel
-
MOSFET (Metal Oxide)
-
1A (Tc)
4V @ 250µA
Polar P3™
2000 V
10V
40Ohm @ 500mA, 10V
23.5 nC @ 10 V
±20V
646 pF @ 25 V
125W (Tc)
-
IXTF6N200P3
MOSFET N-CH 2000V 4A I4PAC
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
ISOPLUSi5-Pak™
ISOPLUS i4-PAC™
N-Channel
-
MOSFET (Metal Oxide)
-
4A (Tc)
5V @ 250µA
Polar P3™
2000 V
10V
4.2Ohm @ 3A, 10V
143 nC @ 10 V
±20V
3700 pF @ 25 V
215W (Tc)
-
IXTH1N200P3HV
MOSFET N-CH 2000V 1A TO247HV
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3 Variant
TO-247HV
N-Channel
-
MOSFET (Metal Oxide)
-
1A (Tc)
4V @ 250µA
Polar P3™
2000 V
10V
40Ohm @ 500mA, 10V
23.5 nC @ 10 V
±20V
646 pF @ 25 V
125W (Tc)
-
IXTT3N200P3HV
MOSFET N-CH 2000V 3A TO268
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
TO-268HV (IXTT)
N-Channel
-
MOSFET (Metal Oxide)
-
3A (Tc)
5V @ 250µA
Polar P3™
2000 V
10V
8Ohm @ 1.5A, 10V
70 nC @ 10 V
±20V
1860 pF @ 25 V
520W (Tc)
-
IXTA1N200P3HV
MOSFET N-CH 2000V 1A TO263
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AA
N-Channel
-
MOSFET (Metal Oxide)
-
1A (Tc)
4V @ 250µA
Polar P3™
2000 V
10V
40Ohm @ 500mA, 10V
23.5 nC @ 10 V
±20V
646 pF @ 25 V
125W (Tc)
-
IXTT1N300P3HV
MOSFET N-CH 3000V 1A TO268
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
TO-268HV (IXTT)
N-Channel
-
MOSFET (Metal Oxide)
-
1A (Tc)
4V @ 250µA
Polar P3™
3000 V
10V
50Ohm @ 500mA, 10V
30.6 nC @ 10 V
±20V
895 pF @ 25 V
195W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.