HiPerFET™, Trench Series, Single FETs, MOSFETs

Results:
39
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Supplier Device Package
Package / Case
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Operating Temperature
Mounting Type
FET Feature
FET Type
Grade
Qualification
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Results remaining39
Applied Filters:
HiPerFET™, Trench
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypeOperating TemperatureGradePackage / CaseTechnologySupplier Device PackageFET FeatureCurrent - Continuous Drain (Id) @ 25°CSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
IXFX420N10T
MOSFET N-CH 100V 420A PLUS247-3
1+
$17.7465
5+
$16.7606
10+
$15.7746
Quantity
3,349 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
-55°C ~ 175°C (TJ)
-
TO-247-3 Variant
MOSFET (Metal Oxide)
PLUS247™-3
-
420A (Tc)
HiPerFET™, Trench
100 V
10V
2.6mOhm @ 60A, 10V
5V @ 8mA
670 nC @ 10 V
±20V
47000 pF @ 25 V
1670W (Tc)
-
IXFH86N30T
MOSFET N-CH 300V 86A TO247AD
1+
$4.5634
5+
$4.3099
10+
$4.0563
Quantity
2,120 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
-55°C ~ 150°C (TJ)
-
TO-247-3
MOSFET (Metal Oxide)
TO-247AD (IXFH)
-
86A (Tc)
HiPerFET™, Trench
300 V
10V
43mOhm @ 43A, 10V
5V @ 4mA
180 nC @ 10 V
±20V
11300 pF @ 25 V
860W (Tc)
-
IXFN230N20T
MOSFET N-CH 200V 220A SOT227B
1+
$45.6338
5+
$43.0986
10+
$40.5634
Quantity
967 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Chassis Mount
N-Channel
-55°C ~ 175°C (TJ)
-
SOT-227-4, miniBLOC
MOSFET (Metal Oxide)
SOT-227B
-
220A (Tc)
HiPerFET™, Trench
200 V
10V
7.5mOhm @ 60A, 10V
5V @ 8mA
378 nC @ 10 V
±20V
28000 pF @ 25 V
1090W (Tc)
-
IXFX170N20T
MOSFET N-CH 200V 170A PLUS247-3
1+
$25.3521
5+
$23.9437
10+
$22.5352
Quantity
690 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
-55°C ~ 175°C (TJ)
-
TO-247-3 Variant
MOSFET (Metal Oxide)
PLUS247™-3
-
170A (Tc)
HiPerFET™, Trench
200 V
10V
11mOhm @ 60A, 10V
5V @ 4mA
265 nC @ 10 V
±20V
19600 pF @ 25 V
1150W (Tc)
-
IXFX180N25T
MOSFET N-CH 250V 180A PLUS247-3
1+
$30.4225
5+
$28.7324
10+
$27.0423
Quantity
524 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
-55°C ~ 150°C (TJ)
-
TO-247-3 Variant
MOSFET (Metal Oxide)
PLUS247™-3
-
180A (Tc)
HiPerFET™, Trench
250 V
10V
12.9mOhm @ 60A, 10V
5V @ 8mA
345 nC @ 10 V
±20V
28000 pF @ 25 V
1390W (Tc)
-
IXFX160N30T
MOSFET N-CH 300V 160A PLUS247-3
1+
$50.7042
5+
$47.8873
10+
$45.0704
Quantity
402 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
-55°C ~ 150°C (TJ)
-
TO-247-3 Variant
MOSFET (Metal Oxide)
PLUS247™-3
-
160A (Tc)
HiPerFET™, Trench
300 V
10V
19mOhm @ 60A, 10V
5V @ 8mA
335 nC @ 10 V
±20V
28000 pF @ 25 V
1390W (Tc)
-
IXFN420N10T
MOSFET N-CH 100V 420A SOT227B
1+
$45.6338
5+
$43.0986
10+
$40.5634
Quantity
353 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Chassis Mount
N-Channel
-55°C ~ 175°C (TJ)
-
SOT-227-4, miniBLOC
MOSFET (Metal Oxide)
SOT-227B
-
420A (Tc)
HiPerFET™, Trench
100 V
10V
2.3mOhm @ 60A, 10V
5V @ 8mA
670 nC @ 10 V
±20V
47000 pF @ 25 V
1070W (Tc)
-
IXFK230N20T
MOSFET N-CH 200V 230A TO264AA
1+
$96.3380
5+
$90.9859
10+
$85.6338
Quantity
168 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
-
-
TO-264-3, TO-264AA
MOSFET (Metal Oxide)
TO-264AA (IXFK)
-
230A (Tc)
HiPerFET™, Trench
200 V
10V
7.5mOhm @ 60A, 10V
5V @ 8mA
378 nC @ 10 V
±20V
28000 pF @ 25 V
1670W (Tc)
-
IXFN360N10T
MOSFET N-CH 100V 360A SOT-227B
1+
$152.1127
5+
$143.6620
10+
$135.2113
Quantity
4 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Chassis Mount
N-Channel
-55°C ~ 175°C (TJ)
-
SOT-227-4, miniBLOC
MOSFET (Metal Oxide)
SOT-227B
-
360A (Tc)
HiPerFET™, Trench
100 V
10V
2.6mOhm @ 180A, 10V
4.5V @ 250µA
505 nC @ 10 V
±20V
36000 pF @ 25 V
830W (Tc)
-
IXFK160N30T
MOSFET N-CH 300V 160A TO264AA
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
-55°C ~ 150°C (TJ)
-
TO-264-3, TO-264AA
MOSFET (Metal Oxide)
TO-264AA (IXFK)
-
160A (Tc)
HiPerFET™, Trench
300 V
10V
19mOhm @ 60A, 10V
5V @ 8mA
335 nC @ 10 V
±20V
28000 pF @ 25 V
1390W (Tc)
-
IXFX230N20T
MOSFET N-CH 200V 230A PLUS247-3
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
-
-
TO-247-3 Variant
MOSFET (Metal Oxide)
PLUS247™-3
-
230A (Tc)
HiPerFET™, Trench
200 V
10V
7.5mOhm @ 60A, 10V
5V @ 8mA
378 nC @ 10 V
±20V
28000 pF @ 25 V
1670W (Tc)
-
IXFN180N25T
MOSFET N-CH 250V 168A SOT227B
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Chassis Mount
N-Channel
-55°C ~ 150°C (TJ)
-
SOT-227-4, miniBLOC
MOSFET (Metal Oxide)
SOT-227B
-
168A (Tc)
HiPerFET™, Trench
250 V
10V
12.9mOhm @ 60A, 10V
5V @ 8mA
345 nC @ 10 V
±20V
28000 pF @ 25 V
900W (Tc)
-
IXFP130N10T
MOSFET N-CH 100V 130A TO220AB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
-55°C ~ 175°C (TJ)
-
TO-220-3
MOSFET (Metal Oxide)
TO-220-3
-
130A (Tc)
HiPerFET™, Trench
100 V
10V
9.1mOhm @ 25A, 10V
4.5V @ 1mA
104 nC @ 10 V
±20V
5080 pF @ 25 V
360W (Tc)
-
IXFA130N10T
MOSFET N-CH 100V 130A TO263
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
-55°C ~ 175°C (TJ)
-
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MOSFET (Metal Oxide)
TO-263AA (IXFA)
-
130A (Tc)
HiPerFET™, Trench
100 V
10V
9.1mOhm @ 25A, 10V
4.5V @ 1mA
104 nC @ 10 V
±20V
5080 pF @ 25 V
360W (Tc)
-
IXFP102N15T
MOSFET N-CH 150V 102A TO220AB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
-55°C ~ 175°C (TJ)
-
TO-220-3
MOSFET (Metal Oxide)
TO-220-3
-
102A (Tc)
HiPerFET™, Trench
150 V
10V
18mOhm @ 500mA, 10V
5V @ 1mA
87 nC @ 10 V
±20V
5220 pF @ 25 V
455W (Tc)
-
IXFT86N30T
MOSFET N-CH 300V 86A TO268
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
-55°C ~ 150°C (TJ)
-
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
MOSFET (Metal Oxide)
TO-268AA
-
86A (Tc)
HiPerFET™, Trench
300 V
10V
43mOhm @ 500mA, 10V
5V @ 4mA
180 nC @ 10 V
±20V
11300 pF @ 25 V
860W (Tc)
-
IXFH94N30T
MOSFET N-CH 300V 94A TO247AD
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
-55°C ~ 150°C (TJ)
-
TO-247-3
MOSFET (Metal Oxide)
TO-247AD (IXFH)
-
94A (Tc)
HiPerFET™, Trench
300 V
10V
36mOhm @ 47A, 10V
5V @ 4mA
190 nC @ 10 V
±20V
11400 pF @ 25 V
890W (Tc)
-
IXFX140N25T
MOSFET N-CH 250V 140A PLUS247-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
-55°C ~ 150°C (TJ)
-
TO-247-3 Variant
MOSFET (Metal Oxide)
PLUS247™-3
-
140A (Tc)
HiPerFET™, Trench
250 V
10V
17mOhm @ 60A, 10V
5V @ 4mA
255 nC @ 10 V
±20V
19000 pF @ 25 V
960W (Tc)
-
IXFX360N10T
MOSFET N-CH 100V 360A PLUS247-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
-55°C ~ 175°C (TJ)
-
TO-247-3 Variant
MOSFET (Metal Oxide)
PLUS247™-3
-
360A (Tc)
HiPerFET™, Trench
100 V
10V
2.9mOhm @ 100A, 10V
5V @ 3mA
525 nC @ 10 V
±20V
33000 pF @ 25 V
1250W (Tc)
-
IXFH102N15T
MOSFET N-CH 150V 102A TO247AD
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
-55°C ~ 175°C (TJ)
-
TO-247-3
MOSFET (Metal Oxide)
TO-247AD (IXFH)
-
102A (Tc)
HiPerFET™, Trench
150 V
10V
18mOhm @ 500mA, 10V
5V @ 1mA
87 nC @ 10 V
±20V
5220 pF @ 25 V
455W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.