SIPMOS® Series, Single FETs, MOSFETs

Results:
322
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Vgs(th) (Max) @ Id
Power Dissipation (Max)
Supplier Device Package
Drain to Source Voltage (Vdss)
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
Vgs (Max)
FET Feature
FET Type
Grade
Mounting Type
Qualification
Technology
Results remaining322
Applied Filters:
SIPMOS®
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseFET TypeSupplier Device PackageTechnologySeriesFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Gate Charge (Qg) (Max) @ Vgs
BUZ73HXKSA1
MOSFET N-CH 200V 7A TO220-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
N-Channel
PG-TO220-3
MOSFET (Metal Oxide)
SIPMOS®
-
7A (Tc)
4V @ 1mA
200 V
10V
400mOhm @ 4.5A, 10V
±20V
530 pF @ 25 V
40W (Tc)
-
BSS169H6327XTSA1
MOSFET N-CH 100V 170MA SOT23-3
1+
¥0.1775
5+
¥0.1676
10+
¥0.1577
Quantity
360,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
N-Channel
PG-SOT23
MOSFET (Metal Oxide)
SIPMOS®
Depletion Mode
170mA (Ta)
1.8V @ 50µA
100 V
0V, 10V
6Ohm @ 170mA, 10V
±20V
68 pF @ 25 V
360mW (Ta)
2.8 nC @ 7 V
BSS138NH6327XTSA2
MOSFET N-CH 60V 230MA SOT23-3
1+
¥0.0634
5+
¥0.0599
10+
¥0.0563
Quantity
318,059 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
N-Channel
PG-SOT23
MOSFET (Metal Oxide)
SIPMOS®
-
230mA (Ta)
1.4V @ 26µA
60 V
4.5V, 10V
3.5Ohm @ 230mA, 10V
±20V
41 pF @ 25 V
360mW (Ta)
1.4 nC @ 10 V
BSS131H6327XTSA1
MOSFET N-CH 240V 110MA SOT23-3
1+
¥0.1141
5+
¥0.1077
10+
¥0.1014
Quantity
317,988 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
N-Channel
PG-SOT23
MOSFET (Metal Oxide)
SIPMOS®
-
110mA (Ta)
1.8V @ 56µA
240 V
4.5V, 10V
14Ohm @ 100mA, 10V
±20V
77 pF @ 25 V
360mW (Ta)
3.1 nC @ 10 V
SN7002WH6327XTSA1
MOSFET N-CH 60V 230MA SOT323-3
1+
¥0.1521
5+
¥0.1437
10+
¥0.1352
Quantity
132,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
SC-70, SOT-323
N-Channel
PG-SOT323
MOSFET (Metal Oxide)
SIPMOS®
-
230mA (Ta)
1.8V @ 26µA
60 V
4.5V, 10V
5Ohm @ 230mA, 10V
±20V
45 pF @ 25 V
500mW (Ta)
1.5 nC @ 10 V
SPD18P06PGBTMA1
MOSFET P-CH 60V 18.6A TO252-3
1+
¥1.0901
5+
¥1.0296
10+
¥0.9690
Quantity
120,610 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
P-Channel
PG-TO252-3
MOSFET (Metal Oxide)
SIPMOS®
-
18.6A (Tc)
4V @ 1mA
60 V
10V
130mOhm @ 13.2A, 10V
±20V
860 pF @ 25 V
80W (Tc)
33 nC @ 10 V
BSP149H6327XTSA1
MOSFET N-CH 200V 660MA SOT223-4
1+
¥0.8620
5+
¥0.8141
10+
¥0.7662
Quantity
107,950 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-261-4, TO-261AA
N-Channel
PG-SOT223-4
MOSFET (Metal Oxide)
SIPMOS®
Depletion Mode
660mA (Ta)
1V @ 400µA
200 V
0V, 10V
1.8Ohm @ 660mA, 10V
±20V
430 pF @ 25 V
1.8W (Ta)
14 nC @ 5 V
SN7002NH6327XTSA2
MOSFET N-CH 60V 200MA SOT23-3
1+
¥0.0761
5+
¥0.0718
10+
¥0.0676
Quantity
77,770 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
N-Channel
PG-SOT23
MOSFET (Metal Oxide)
SIPMOS®
-
200mA (Ta)
1.8V @ 26µA
60 V
4.5V, 10V
5Ohm @ 500mA, 10V
±20V
45 pF @ 25 V
360mW (Ta)
1.5 nC @ 10 V
BSS84PH6327XTSA2
MOSFET P-CH 60V 170MA SOT23-3
1+
¥0.0634
5+
¥0.0599
10+
¥0.0563
Quantity
74,879 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
P-Channel
PG-SOT23
MOSFET (Metal Oxide)
SIPMOS®
-
170mA (Ta)
2V @ 20µA
60 V
4.5V, 10V
8Ohm @ 170mA, 10V
±20V
19 pF @ 25 V
360mW (Ta)
1.5 nC @ 10 V
BSS127H6327XTSA2
MOSFET N-CH 600V 21MA SOT23-3
1+
¥0.1065
5+
¥0.1006
10+
¥0.0946
Quantity
63,548 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
N-Channel
PG-SOT23
MOSFET (Metal Oxide)
SIPMOS®
-
21mA (Ta)
2.6V @ 8µA
600 V
4.5V, 10V
500Ohm @ 16mA, 10V
±20V
28 pF @ 25 V
500mW (Ta)
1 nC @ 10 V
BSS84PWH6327XTSA1
MOSFET P-CH 60V 150MA SOT323-3
1+
¥0.0748
5+
¥0.0706
10+
¥0.0665
Quantity
51,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
SC-70, SOT-323
P-Channel
PG-SOT323
MOSFET (Metal Oxide)
SIPMOS®
-
150mA (Ta)
2V @ 20µA
60 V
4.5V, 10V
8Ohm @ 150mA, 10V
±20V
19.1 pF @ 25 V
300mW (Ta)
1.5 nC @ 10 V
SPD30P06PGBTMA1
MOSFET P-CH 60V 30A TO252-3
1+
¥0.8366
5+
¥0.7901
10+
¥0.7437
Quantity
50,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
P-Channel
PG-TO252-3
MOSFET (Metal Oxide)
SIPMOS®
-
30A (Tc)
4V @ 1.7mA
60 V
10V
75mOhm @ 21.5A, 10V
±20V
1535 pF @ 25 V
125W (Tc)
48 nC @ 10 V
BSP125H6327XTSA1
MOSFET N-CH 600V 120MA SOT223-4
1+
¥1.4704
5+
¥1.3887
10+
¥1.3070
Quantity
46,660 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-261-4, TO-261AA
N-Channel
PG-SOT223-4
MOSFET (Metal Oxide)
SIPMOS®
-
120mA (Ta)
2.3V @ 94µA
600 V
4.5V, 10V
45Ohm @ 120mA, 10V
±20V
150 pF @ 25 V
1.8W (Ta)
6.6 nC @ 10 V
BSP613P
MOSFET P-CH 60V 2.9A SOT223-4
1+
¥1.0901
5+
¥1.0296
10+
¥0.9690
Quantity
43,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-261-4, TO-261AA
P-Channel
PG-SOT223-4-21
MOSFET (Metal Oxide)
SIPMOS®
-
2.9A (Ta)
4V @ 1mA
60 V
10V
130mOhm @ 2.9A, 10V
±20V
875 pF @ 25 V
1.8W (Ta)
33 nC @ 10 V
BSP135H6327XTSA1
MOSFET N-CH 600V 120MA SOT223-4
1+
¥0.8113
5+
¥0.7662
10+
¥0.7211
Quantity
42,777 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-261-4, TO-261AA
N-Channel
PG-SOT223-4
MOSFET (Metal Oxide)
SIPMOS®
Depletion Mode
120mA (Ta)
1V @ 94µA
600 V
0V, 10V
45Ohm @ 120mA, 10V
±20V
146 pF @ 25 V
1.8W (Ta)
4.9 nC @ 5 V
BSS139H6327XTSA1
MOSFET N-CH 250V 100MA SOT23-3
1+
¥0.7606
5+
¥0.7183
10+
¥0.6761
Quantity
36,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
N-Channel
PG-SOT23
MOSFET (Metal Oxide)
SIPMOS®
Depletion Mode
100mA (Ta)
1V @ 56µA
250 V
0V, 10V
14Ohm @ 100µA, 10V
±20V
76 pF @ 25 V
360mW (Ta)
3.5 nC @ 5 V
BSS7728NH6327XTSA2
MOSFET N-CH 60V 200MA SOT23-3
1+
¥0.1014
5+
¥0.0958
10+
¥0.0901
Quantity
35,888 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
N-Channel
PG-SOT23
MOSFET (Metal Oxide)
SIPMOS®
-
200mA (Ta)
2.3V @ 26µA
60 V
4.5V, 10V
5Ohm @ 500mA, 10V
±20V
56 pF @ 25 V
360mW (Ta)
1.5 nC @ 10 V
SPD15P10PLGBTMA1
MOSFET P-CH 100V 15A TO252-3
1+
¥1.5211
5+
¥1.4366
10+
¥1.3521
Quantity
30,120 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
P-Channel
PG-TO252-3
MOSFET (Metal Oxide)
SIPMOS®
-
15A (Tc)
2V @ 1.54mA
100 V
4.5V, 10V
200mOhm @ 11.3A, 10V
±20V
1490 pF @ 25 V
128W (Tc)
62 nC @ 10 V
BSS138WH6327XTSA1
MOSFET N-CH 60V 280MA SOT323-3
1+
¥0.2408
5+
¥0.2275
10+
¥0.2141
Quantity
29,600 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
SC-70, SOT-323
N-Channel
PG-SOT323
MOSFET (Metal Oxide)
SIPMOS®
-
280mA (Ta)
1.4V @ 26µA
60 V
4.5V, 10V
3.5Ohm @ 200mA, 10V
±20V
43 pF @ 25 V
500mW (Ta)
1.5 nC @ 10 V
BSR316PH6327XTSA1
MOSFET P-CH 100V 360MA SC59
1+
¥0.0735
5+
¥0.0694
10+
¥0.0654
Quantity
27,770 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
P-Channel
PG-SC59-3
MOSFET (Metal Oxide)
SIPMOS®
-
360mA (Ta)
1V @ 170µA
100 V
4.5V, 10V
1.8Ohm @ 360mA, 10V
±20V
165 pF @ 25 V
500mW (Tc)
7 nC @ 10 V

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.