HEXFET® Series, Single FETs, MOSFETs

Results:
3,058
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Vgs(th) (Max) @ Id
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Operating Temperature
FET Feature
FET Type
Mounting Type
Qualification
Grade
Configuration
Technology
Power - Max
Results remaining3,058
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HEXFET®
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypeDrain to Source Voltage (Vdss)TechnologySeriesCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsFET FeaturePower Dissipation (Max)Supplier Device PackagePackage / Case
IRF6894MTRPBF
MOSFET N-CH 25V 32A DIRECTFET
1+
$2.0282
5+
$1.9155
10+
$1.8028
Quantity
46,071 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
25 V
MOSFET (Metal Oxide)
HEXFET®
32A (Ta), 160A (Tc)
4.5V, 10V
1.3mOhm @ 33A, 10V
2.1V @ 100µA
39 nC @ 4.5 V
±16V
4160 pF @ 13 V
Schottky Diode (Body)
2.1W (Ta), 54W (Tc)
DIRECTFET™ MX
DirectFET™ Isometric MX
AUIRF7379QTR
AUIRF7379Q - 30V-55V DUAL N AND
1+
$1.2676
5+
$1.1972
10+
$1.1268
Quantity
4,992 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
30V
MOSFET (Metal Oxide)
HEXFET®
5.8A, 4.3A
45mOhm @ 5.8A, 10V
3V @ 250µA
25nC @ 10V
520pF @ 25V
Logic Level Gate
8-SOIC
8-SOIC (0.154", 3.90mm Width)
IRF6728MTR1PBF
MOSFET N-CH 30V 23A DIRECTFET
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
30 V
MOSFET (Metal Oxide)
HEXFET®
23A (Ta), 140A (Tc)
4.5V, 10V
2.5mOhm @ 23A, 10V
2.35V @ 100µA
42 nC @ 4.5 V
±20V
4110 pF @ 15 V
-
2.1W (Ta), 75W (Tc)
DIRECTFET™ MX
DirectFET™ Isometric MX
IRF6893MTRPBF
MOSFET N-CH 25V 29A DIRECTFET
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
25 V
MOSFET (Metal Oxide)
HEXFET®
29A (Ta), 168A (Tc)
4.5V, 10V
1.6mOhm @ 29A, 10V
2.1V @ 100µA
38 nC @ 4.5 V
±16V
3480 pF @ 13 V
-
2.1W (Ta), 69W (Tc)
DIRECTFET™ MX
DirectFET™ Isometric MX
AUIRF7207Q
MOSFET P-CH 20V 5.4A 8SO
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
20 V
MOSFET (Metal Oxide)
HEXFET®
5.4A (Ta)
2.7V, 4.5V
60mOhm @ 5.4A, 4.5V
1.6V @ 250µA
22 nC @ 4.5 V
±12V
780 pF @ 15 V
-
2.5W (Ta)
8-SO
8-SOIC (0.154", 3.90mm Width)
IRF6810STR1PBF
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
25 V
MOSFET (Metal Oxide)
HEXFET®
16A (Ta), 50A (Tc)
4.5V, 10V
5.2mOhm @ 16A, 10V
2.1V @ 25µA
11 nC @ 4.5 V
±16V
1038 pF @ 13 V
-
2.1W (Ta), 20W (Tc)
DirectFET™ Isometric S1
DirectFET™ Isometric S1
IRF6893MTR1PBF
MOSFET N-CH 25V 29A DIRECTFET
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
25 V
MOSFET (Metal Oxide)
HEXFET®
29A (Ta), 168A (Tc)
4.5V, 10V
1.6mOhm @ 29A, 10V
2.1V @ 100µA
38 nC @ 4.5 V
±16V
3480 pF @ 13 V
-
2.1W (Ta), 69W (Tc)
DIRECTFET™ MX
DirectFET™ Isometric MX
IRF8308MTR1PBF
MOSFET N-CH 30V 27A DIRECTFET
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
30 V
MOSFET (Metal Oxide)
HEXFET®
27A (Ta), 150A (Tc)
4.5V, 10V
2.5mOhm @ 27A, 10V
2.35V @ 100µA
42 nC @ 4.5 V
±20V
4404 pF @ 15 V
-
2.8W (Ta), 89W (Tc)
DIRECTFET™ MX
DirectFET™ Isometric MX
IRF8306MTR1PBF
MOSFET N-CH 30V 23A DIRECTFET
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
30 V
MOSFET (Metal Oxide)
HEXFET®
23A (Ta), 140A (Tc)
4.5V, 10V
2.5mOhm @ 23A, 10V
2.35V @ 100µA
38 nC @ 4.5 V
±20V
4110 pF @ 15 V
Schottky Diode (Body)
2.1W (Ta), 75W (Tc)
DirectFET™ Isometric MX
DirectFET™ Isometric MX
IRFH4213DTRPBF
MOSFET N-CH 25V 40A PQFN
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
25 V
MOSFET (Metal Oxide)
HEXFET®
40A (Ta)
4.5V, 10V
1.35mOhm @ 50A, 10V
2.1V @ 100µA
55 nC @ 10 V
±20V
3520 pF @ 13 V
-
3.6W (Ta), 96W (Tc)
PQFN (5x6)
8-PowerTDFN
IRF7607TRPBFTR
IRF7607 - 12V-300V N-CHANNEL POW
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
20 V
MOSFET (Metal Oxide)
HEXFET®
6.5A (Ta)
2.5V, 4.5V
30mOhm @ 6.5A, 4.5V
1.2V @ 250µA
22 nC @ 5 V
±12V
1310 pF @ 15 V
-
1.8W (Ta)
Micro8™
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
IRF1902GPBF
MOSFET N-CH 20V 4.2A 8SO
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
20 V
MOSFET (Metal Oxide)
HEXFET®
4.2A (Ta)
-
85mOhm @ 4A, 4.5V
700mV @ 250µA
7.5 nC @ 4.5 V
-
310 pF @ 15 V
-
-
8-SO
8-SOIC (0.154", 3.90mm Width)
AUIRLSL3036
MOSFET N-CH 60V 195A TO262
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
N-Channel
60 V
MOSFET (Metal Oxide)
HEXFET®
195A (Tc)
4.5V, 10V
2.4mOhm @ 165A, 10V
2.5V @ 250µA
140 nC @ 4.5 V
±16V
11210 pF @ 50 V
-
380W (Tc)
TO-262
TO-262-3 Long Leads, I²Pak, TO-262AA
IRF7205TRPBF
MOSFET P-CH 30V 4.6A 8SO
1+
$0.2535
5+
$0.2394
10+
$0.2254
Quantity
5,179 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
30 V
MOSFET (Metal Oxide)
HEXFET®
4.6A (Ta)
4.5V, 10V
70mOhm @ 4.6A, 10V
3V @ 250µA
40 nC @ 10 V
±20V
870 pF @ 10 V
-
2.5W (Tc)
8-SO
8-SOIC (0.154", 3.90mm Width)
IRF8308MTRPBF
TRENCH MOSFET - DIRECTFET MV
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
30 V
MOSFET (Metal Oxide)
HEXFET®
27A (Ta), 150A (Tc)
4.5V, 10V
2.5mOhm @ 27A, 10V
2.35V @ 100µA
42 nC @ 4.5 V
±20V
4404 pF @ 15 V
-
2.8W (Ta), 89W (Tc)
DIRECTFET™ MX
DirectFET™ Isometric MX
IRL8114PBF
MOSFET N-CH 30V 90A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
N-Channel
30 V
MOSFET (Metal Oxide)
HEXFET®
90A (Tc)
-
4.5mOhm @ 40A, 10V
2.25V @ 250µA
29 nC @ 4.5 V
±20V
2660 pF @ 15 V
-
115W (Tc)
TO-220AB
TO-220-3
IRL8114PBF
MOSFET N-CH 30V 90A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
N-Channel
30 V
MOSFET (Metal Oxide)
HEXFET®
90A (Tc)
4.5V, 10V
4.5mOhm @ 40A, 10V
2.25V @ 250µA
29 nC @ 4.5 V
±20V
2660 pF @ 15 V
-
115W (Tc)
TO-220AB
TO-220-3
IRLR2905ZTRLPBF
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
55 V
MOSFET (Metal Oxide)
HEXFET®
42A (Tc)
4.5V, 10V
13.5mOhm @ 36A, 10V
3V @ 250µA
35 nC @ 5 V
±16V
1570 pF @ 25 V
-
110W (Tc)
DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
AUIRF1404S
MOSFET N-CH 40V 75A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
40 V
MOSFET (Metal Oxide)
HEXFET®
75A (Tc)
10V
4mOhm @ 95A, 10V
4V @ 250µA
200 nC @ 10 V
±20V
7360 pF @ 25 V
-
3.8W (Ta), 200W (Tc)
D2PAK
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
AUIRF2903Z
MOSFET N-CH 30V 160A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
N-Channel
30 V
MOSFET (Metal Oxide)
HEXFET®
160A (Tc)
10V
2.4mOhm @ 75A, 10V
4V @ 250µA
240 nC @ 10 V
±20V
6320 pF @ 25 V
-
290W (Tc)
TO-220AB
TO-220-3

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.