CoolMOS™ E6 Series, Single FETs, MOSFETs

Results:
18
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Vgs(th) (Max) @ Id
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Package / Case
Operating Temperature
Mounting Type
Drain to Source Voltage (Vdss)
FET Feature
FET Type
Grade
Qualification
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Results remaining18
Applied Filters:
CoolMOS™ E6
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseGradeSupplier Device PackageTechnologyFET FeatureSeriesDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
IPD60R600E6
MOSFET N-CH 600V 7.3A TO252-3
1+
$0.5070
5+
$0.4789
10+
$0.4507
Quantity
25,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3
MOSFET (Metal Oxide)
-
CoolMOS™ E6
600 V
7.3A (Tc)
10V
600mOhm @ 2.4A, 10V
3.5V @ 200µA
20.5 nC @ 10 V
±20V
440 pF @ 100 V
63W (Tc)
-
IPD60R380E6BTMA1
MOSFET N-CH 600V 10.6A TO252-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 155°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3
MOSFET (Metal Oxide)
-
CoolMOS™ E6
600 V
10.6A (Tc)
10V
380mOhm @ 3.8A, 10V
3.5V @ 300µA
32 nC @ 10 V
±20V
700 pF @ 100 V
83W (Tc)
-
IPB65R280E6ATMA1
MOSFET N-CH 650V 13.8A D2PAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
PG-TO263-3
MOSFET (Metal Oxide)
-
CoolMOS™ E6
650 V
13.8A (Tc)
10V
280mOhm @ 4.4A, 10V
3.5V @ 440µA
45 nC @ 10 V
±20V
950 pF @ 100 V
104W (Tc)
-
IPI65R280E6XKSA1
MOSFET N-CH 650V 13.8A TO262-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-262-3 Long Leads, I²Pak, TO-262AA
-
PG-TO262-3-1
MOSFET (Metal Oxide)
-
CoolMOS™ E6
650 V
13.8A (Tc)
10V
280mOhm @ 4.4A, 10V
3.5V @ 440µA
45 nC @ 10 V
±20V
950 pF @ 100 V
104W (Tc)
-
IPL65R190E6AUMA1
MOSFET N-CH 650V 20.2A 4VSON
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
4-PowerTSFN
-
PG-VSON-4
MOSFET (Metal Oxide)
-
CoolMOS™ E6
650 V
20.2A (Tc)
10V
190mOhm @ 7.3A, 10V
3.5V @ 700µA
73 nC @ 10 V
±20V
1620 pF @ 100 V
151W (Tc)
-
IPL65R310E6AUMA1
MOSFET N-CH 650V 13.1A THIN-PAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
4-PowerTSFN
-
PG-VSON-4
MOSFET (Metal Oxide)
-
CoolMOS™ E6
650 V
13.1A (Tc)
10V
310mOhm @ 4.4A, 10V
3.5V @ 400µA
45 nC @ 10 V
±20V
950 pF @ 100 V
104W (Tc)
-
IPL65R420E6AUMA1
MOSFET N-CH 650V 10.1A THIN-PAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
4-PowerTSFN
-
PG-VSON-4
MOSFET (Metal Oxide)
-
CoolMOS™ E6
650 V
10.1A (Tc)
10V
420mOhm @ 3.4A, 10V
3.5V @ 300µA
39 nC @ 10 V
±20V
710 pF @ 100 V
83W (Tc)
-
IPL65R660E6AUMA1
MOSFET N-CH 650V 7A THIN-PAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
4-PowerTSFN
-
PG-VSON-4
MOSFET (Metal Oxide)
-
CoolMOS™ E6
650 V
7A (Tc)
10V
660mOhm @ 2.1A, 10V
3.5V @ 200µA
23 nC @ 10 V
±20V
440 pF @ 100 V
63W (Tc)
-
IPS65R600E6AKMA1
MOSFET N-CH 650V 7.3A TO251-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-251-3 Stub Leads, IPak
-
PG-TO251-3-11
MOSFET (Metal Oxide)
-
CoolMOS™ E6
650 V
7.3A (Tc)
10V
600mOhm @ 2.1A, 10V
3.5V @ 210µA
23 nC @ 10 V
±20V
440 pF @ 100 V
63W (Tc)
-
IPD60R750E6ATMA1
MOSFET N-CH 600V 5.7A TO252-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3
MOSFET (Metal Oxide)
-
CoolMOS™ E6
600 V
5.7A (Tc)
10V
750mOhm @ 2A, 10V
3.5V @ 170µA
17.2 nC @ 10 V
±20V
373 pF @ 100 V
48W (Tc)
-
IPD65R600E6ATMA1
MOSFET N-CH 650V 7.3A TO252-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3
MOSFET (Metal Oxide)
-
CoolMOS™ E6
650 V
7.3A (Tc)
10V
600mOhm @ 2.1A, 10V
3.5V @ 210µA
23 nC @ 10 V
±20V
440 pF @ 100 V
63W (Tc)
-
IPD60R450E6ATMA1
MOSFET N-CH 600V 9.2A TO252-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3
MOSFET (Metal Oxide)
-
CoolMOS™ E6
600 V
9.2A (Tc)
10V
450mOhm @ 3.4A, 10V
3.5V @ 280µA
28 nC @ 10 V
±20V
620 pF @ 100 V
74W (Tc)
-
IPD65R250E6XTMA1
MOSFET N-CH 650V 16.1A TO252-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3
MOSFET (Metal Oxide)
-
CoolMOS™ E6
650 V
16.1A (Tc)
10V
250mOhm @ 4.4A, 10V
3.5V @ 400µA
45 nC @ 10 V
±20V
950 pF @ 1000 V
208W (Tc)
-
IPD60R380E6ATMA2
MOSFET N-CH 600V 10.6A TO252-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3
MOSFET (Metal Oxide)
-
CoolMOS™ E6
600 V
10.6A (Tc)
10V
380mOhm @ 3.8A, 10V
3.5V @ 300µA
32 nC @ 10 V
±20V
700 pF @ 100 V
83W (Tc)
-
IPD60R600E6ATMA1
MOSFET N-CH 600V 7.3A TO252
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3
MOSFET (Metal Oxide)
-
CoolMOS™ E6
600 V
7.3A (Tc)
10V
600mOhm @ 2.4A, 10V
3.5V @ 200µA
20.5 nC @ 10 V
±20V
440 pF @ 100 V
63W (Tc)
-
IPD60R750E6BTMA1
MOSFET N-CH 600V 5.7A TO252-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3
MOSFET (Metal Oxide)
-
CoolMOS™ E6
600 V
5.7A (Tc)
10V
750mOhm @ 2A, 10V
3.5V @ 170µA
17.2 nC @ 10 V
±20V
373 pF @ 100 V
48W (Tc)
-
IPD60R450E6BTMA1
MOSFET N-CH 600V 9.2A TO252-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3
MOSFET (Metal Oxide)
-
CoolMOS™ E6
600 V
9.2A (Tc)
10V
450mOhm @ 3.4A, 10V
3.5V @ 280µA
28 nC @ 10 V
±20V
620 pF @ 100 V
74W (Tc)
-
IPD65R380E6ATMA1
MOSFET N-CH 650V 10.6A TO252-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3
MOSFET (Metal Oxide)
-
CoolMOS™ E6
650 V
10.6A (Tc)
10V
380mOhm @ 3.2A, 10V
3.5V @ 320µA
39 nC @ 10 V
±20V
710 pF @ 100 V
83W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.