MESH OVERLAY™ Series, Single FETs, MOSFETs

Results:
25
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Supplier Device Package
Package / Case
Operating Temperature
Drain to Source Voltage (Vdss)
Mounting Type
Vgs(th) (Max) @ Id
Vgs (Max)
FET Feature
FET Type
Grade
Qualification
Technology
Drive Voltage (Max Rds On, Min Rds On)
Results remaining25
Applied Filters:
MESH OVERLAY™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseSupplier Device PackageGradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
STB19NF20
MOSFET N-CH 200V 15A D2PAK
1+
$6.8451
5+
$6.4648
10+
$6.0845
Quantity
14,609 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
-
MOSFET (Metal Oxide)
-
15A (Tc)
4V @ 250µA
MESH OVERLAY™
200 V
10V
160mOhm @ 7.5A, 10V
24 nC @ 10 V
±20V
800 pF @ 25 V
90W (Tc)
-
STD5N20T4
MOSFET N-CH 200V 5A DPAK
1+
$0.4310
5+
$0.4070
10+
$0.3831
Quantity
10,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
-
MOSFET (Metal Oxide)
-
5A (Tc)
4V @ 250µA
MESH OVERLAY™
200 V
10V
800mOhm @ 2.5A, 10V
27 nC @ 10 V
±20V
350 pF @ 25 V
45W (Tc)
-
STD7NS20T4
MOSFET N-CH 200V 7A DPAK
1+
$0.4563
5+
$0.4310
10+
$0.4056
Quantity
3,371 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
-
MOSFET (Metal Oxide)
-
7A (Tc)
4V @ 250µA
MESH OVERLAY™
200 V
10V
400mOhm @ 3.5A, 10V
45 nC @ 10 V
±20V
540 pF @ 25 V
45W (Tc)
-
STF19NF20
MOSFET N-CH 200V 15A TO220FP
1+
$5.0704
5+
$4.7887
10+
$4.5070
Quantity
1,520 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220FP
-
MOSFET (Metal Oxide)
-
15A (Tc)
4V @ 250µA
MESH OVERLAY™
200 V
10V
160mOhm @ 7.5A, 10V
24 nC @ 10 V
±20V
800 pF @ 25 V
25W (Tc)
-
STB40NS15T4
MOSFET N-CH 150V 40A D2PAK
1+
$3.8028
5+
$3.5915
10+
$3.3803
Quantity
50 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 175°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
-
MOSFET (Metal Oxide)
-
40A (Tc)
4V @ 250µA
MESH OVERLAY™
150 V
10V
52mOhm @ 20A, 10V
110 nC @ 10 V
±20V
2420 pF @ 25 V
300W (Tc)
-
STP62NS04Z
MOSFET N-CH 33V 62A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
N-Channel
TO-220-3
TO-220
-
MOSFET (Metal Oxide)
-
62A (Tc)
4V @ 250µA
MESH OVERLAY™
33 V
10V
15mOhm @ 30A, 10V
47 nC @ 10 V
Clamped
1330 pF @ 25 V
110W (Tc)
-
STD19NF20
MOSFET N-CHANNEL 200V 15A DPAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252 (DPAK)
-
MOSFET (Metal Oxide)
-
15A (Tc)
4V @ 250µA
MESH OVERLAY™
200 V
10V
160mOhm @ 7.5A, 10V
24 nC @ 10 V
±20V
800 pF @ 25 V
90W (Tc)
-
STP8NS25FP
MOSFET N-CH 250V 8A TO220FP
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220FP
-
MOSFET (Metal Oxide)
-
8A (Tc)
4V @ 250µA
MESH OVERLAY™
250 V
10V
450mOhm @ 4A, 10V
51.8 nC @ 10 V
±20V
770 pF @ 25 V
30W (Tc)
-
STY100NS20FD
MOSFET N-CH 200V 100A MAX247
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
150°C (TJ)
N-Channel
TO-247-3
MAX247™
-
MOSFET (Metal Oxide)
-
100A (Tc)
4V @ 250µA
MESH OVERLAY™
200 V
10V
24mOhm @ 50A, 10V
360 nC @ 10 V
±20V
7900 pF @ 25 V
450W (Tc)
-
STP22NS25Z
MOSFET N-CH 250V 22A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220
-
MOSFET (Metal Oxide)
-
22A (Tc)
4V @ 250µA
MESH OVERLAY™
250 V
10V
150mOhm @ 11A, 10V
151 nC @ 10 V
±20V
2400 pF @ 25 V
135W (Tc)
-
STP8NS25
MOSFET N-CH 250V 8A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
150°C (TJ)
N-Channel
TO-220-3
TO-220
-
MOSFET (Metal Oxide)
-
8A (Tc)
4V @ 250µA
MESH OVERLAY™
250 V
10V
450mOhm @ 4A, 10V
51.8 nC @ 10 V
±20V
770 pF @ 25 V
80W (Tc)
-
STB22NS25ZT4
MOSFET N-CH 250V 22A D2PAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
-
MOSFET (Metal Oxide)
-
22A (Tc)
4V @ 250µA
MESH OVERLAY™
250 V
10V
150mOhm @ 11A, 10V
151 nC @ 10 V
±20V
2400 pF @ 25 V
135W (Tc)
-
STB16NS25T4
MOSFET N-CH 250V 16A D2PAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
175°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
-
MOSFET (Metal Oxide)
-
16A (Tc)
4V @ 250µA
MESH OVERLAY™
250 V
10V
280mOhm @ 8A, 10V
80 nC @ 10 V
±20V
1270 pF @ 25 V
140W (Tc)
-
STB130NS04ZBT4
MOSFET N-CH 33V 80A D2PAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
-
MOSFET (Metal Oxide)
-
80A (Tc)
4V @ 1mA
MESH OVERLAY™
33 V
10V
9mOhm @ 40A, 10V
80 nC @ 10 V
Clamped
2700 pF @ 25 V
300W (Tc)
-
IRF634
MOSFET N-CH 250V 8A TO220AB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
150°C (TJ)
N-Channel
TO-220-3
TO-220
-
MOSFET (Metal Oxide)
-
8A (Tc)
4V @ 250µA
MESH OVERLAY™
250 V
10V
450mOhm @ 4A, 10V
51.8 nC @ 10 V
±20V
770 pF @ 25 V
80W (Tc)
-
IRF640FP
MOSFET N-CH 200V 18A TO220FP
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220FP
-
MOSFET (Metal Oxide)
-
18A (Tc)
4V @ 250µA
MESH OVERLAY™
200 V
10V
180mOhm @ 9A, 10V
72 nC @ 10 V
±20V
1560 pF @ 25 V
40W (Tc)
-
STP16NS25
MOSFET N-CH 250V 16A TO220AB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220
-
MOSFET (Metal Oxide)
-
16A (Tc)
4V @ 250µA
MESH OVERLAY™
250 V
10V
280mOhm @ 8A, 10V
83 nC @ 10 V
±20V
1270 pF @ 25 V
140W (Tc)
-
IRF640
MOSFET N-CH 200V 18A TO220AB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
150°C (TJ)
N-Channel
TO-220-3
TO-220
-
MOSFET (Metal Oxide)
-
18A (Tc)
4V @ 250µA
MESH OVERLAY™
200 V
10V
180mOhm @ 9A, 10V
72 nC @ 10 V
±20V
1560 pF @ 25 V
125W (Tc)
-
STE110NS20FD
MOSFET N-CH 200V 110A ISOTOP
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
150°C (TJ)
N-Channel
ISOTOP
ISOTOP®
-
MOSFET (Metal Oxide)
-
110A (Tc)
4V @ 250µA
MESH OVERLAY™
200 V
10V
24mOhm @ 50A, 10V
504 nC @ 10 V
±20V
7900 pF @ 25 V
500W (Tc)
-
STD4NS25T4
MOSFET N-CH 250V 4A DPAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
-
MOSFET (Metal Oxide)
-
4A (Tc)
4V @ 250µA
MESH OVERLAY™
250 V
10V
1.1Ohm @ 2A, 10V
27 nC @ 10 V
±20V
355 pF @ 25 V
50W (Tc)
-

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.