U-MOSVIII-H Series, Single FETs, MOSFETs

Results:
140
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Power Dissipation (Max)
Gate Charge (Qg) (Max) @ Vgs
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
Grade
Mounting Type
Qualification
FET Feature
FET Type
Technology
Vgs (Max)
Results remaining140
Applied Filters:
U-MOSVIII-H
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypePackage / CaseOperating TemperatureGradeSupplier Device PackageTechnologySeriesFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
TPH6R30ANL,L1Q
1+
$0.7606
5+
$0.7183
10+
$0.6761
Quantity
53,489 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
150°C
-
8-SOP Advance (5x5)
MOSFET (Metal Oxide)
U-MOSVIII-H
-
100 V
66A (Ta), 45A (Tc)
4.5V, 10V
6.3mOhm @ 22.5A, 10V
2.5V @ 500µA
55 nC @ 10 V
±20V
4300 pF @ 50 V
2.5W (Ta), 54W (Tc)
-
TK100E10N1,S1X
1+
$0.9735
5+
$0.9194
10+
$0.8654
Quantity
30,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
150°C (TJ)
-
TO-220
MOSFET (Metal Oxide)
U-MOSVIII-H
-
100 V
100A (Ta)
10V
3.4mOhm @ 50A, 10V
4V @ 1mA
140 nC @ 10 V
±20V
8800 pF @ 50 V
255W (Tc)
-
TPH2R608NH,L1Q
1+
$6.3380
5+
$5.9859
10+
$5.6338
Quantity
20,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
150°C (TJ)
-
8-SOP Advance (5x5)
MOSFET (Metal Oxide)
U-MOSVIII-H
-
75 V
150A (Tc)
10V
2.6mOhm @ 50A, 10V
4V @ 1mA
72 nC @ 10 V
±20V
6000 pF @ 37.5 V
142W (Tc)
-
TPH5900CNH,L1Q
1+
$0.8746
5+
$0.8261
10+
$0.7775
Quantity
19,093 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
150°C (TJ)
-
8-SOP Advance (5x5)
MOSFET (Metal Oxide)
U-MOSVIII-H
-
150 V
9A (Ta)
10V
59mOhm @ 4.5A, 10V
4V @ 200µA
7 nC @ 10 V
±20V
600 pF @ 75 V
1.6W (Ta), 42W (Tc)
-
TK65S04N1L,LXHQ
1+
$1.0141
5+
$0.9577
10+
$0.9014
Quantity
17,918 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
175°C
-
DPAK+
MOSFET (Metal Oxide)
U-MOSVIII-H
-
40 V
65A (Ta)
4.5V, 10V
4.3mOhm @ 32.5A, 10V
2.5V @ 300µA
39 nC @ 10 V
±20V
2550 pF @ 10 V
107W (Tc)
-
TPN8R903NL,LQ
1+
$0.7606
5+
$0.7183
10+
$0.6761
Quantity
10,421 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
150°C (TJ)
-
8-TSON Advance (3.1x3.1)
MOSFET (Metal Oxide)
U-MOSVIII-H
-
30 V
20A (Tc)
4.5V, 10V
8.9mOhm @ 10A, 10V
2.3V @ 100µA
9.8 nC @ 4.5 V
±20V
820 pF @ 15 V
700mW (Ta), 22W (Tc)
-
SSM3K341R,LF
1+
$1.2676
5+
$1.1972
10+
$1.1268
Quantity
10,100 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
SOT-23-3 Flat Leads
-55°C ~ 175°C (TJ)
-
SOT-23F
MOSFET (Metal Oxide)
U-MOSVIII-H
-
60 V
6A (Ta)
4V, 10V
36mOhm @ 5A, 10V
2.5V @ 100µA
9.3 nC @ 10 V
±20V
550 pF @ 10 V
1.2W (Ta)
-
TPN4R303NL,L1Q
1+
$0.7606
5+
$0.7183
10+
$0.6761
Quantity
6,500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
150°C (TJ)
-
8-TSON Advance (3.1x3.1)
MOSFET (Metal Oxide)
U-MOSVIII-H
-
30 V
40A (Tc)
4.5V, 10V
4.3mOhm @ 20A, 10V
2.3V @ 200µA
14.8 nC @ 10 V
±20V
1400 pF @ 15 V
700mW (Ta), 34W (Tc)
-
TPH2900ENH,L1Q
1+
$6.5915
5+
$6.2254
10+
$5.8592
Quantity
6,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
150°C (TJ)
-
8-SOP Advance (5x5)
MOSFET (Metal Oxide)
U-MOSVIII-H
-
200 V
33A (Ta)
10V
29mOhm @ 16.5A, 10V
4V @ 1mA
22 nC @ 10 V
±20V
2200 pF @ 100 V
78W (Tc)
-
TPH1400ANH,L1Q
1+
$3.8028
5+
$3.5915
10+
$3.3803
Quantity
5,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
150°C (TJ)
-
8-SOP Advance (5x5)
MOSFET (Metal Oxide)
U-MOSVIII-H
-
100 V
24A (Tc)
10V
13.6mOhm @ 12A, 10V
4V @ 300µA
22 nC @ 10 V
±20V
1900 pF @ 50 V
1.6W (Ta), 48W (Tc)
-
TPN7R506NH,L1Q
1+
$0.7530
5+
$0.7111
10+
$0.6693
Quantity
4,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
150°C (TJ)
-
8-TSON Advance (3.1x3.1)
MOSFET (Metal Oxide)
U-MOSVIII-H
-
60 V
26A (Tc)
6.5V, 10V
7.5mOhm @ 13A, 10V
4V @ 200µA
22 nC @ 10 V
±20V
1800 pF @ 30 V
700mW (Ta), 42W (Tc)
-
SSM3K361TU,LF
1+
$0.5070
5+
$0.4789
10+
$0.4507
Quantity
3,520 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
3-SMD, Flat Lead
175°C
-
UFM
MOSFET (Metal Oxide)
U-MOSVIII-H
-
100 V
3.5A (Ta)
4.5V, 10V
69mOhm @ 2A, 10V
2.5V @ 100µA
3.2 nC @ 4.5 V
±20V
430 pF @ 15 V
1W (Ta)
-
TK55S10N1,LQ
1+
$7.6056
5+
$7.1831
10+
$6.7606
Quantity
3,300 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
175°C (TJ)
-
DPAK+
MOSFET (Metal Oxide)
U-MOSVIII-H
-
100 V
55A (Ta)
10V
6.5mOhm @ 27.5A, 10V
4V @ 500µA
49 nC @ 10 V
±20V
3280 pF @ 10 V
157W (Tc)
-
TK33S10N1Z,LQ
1+
$6.3380
5+
$5.9859
10+
$5.6338
Quantity
3,174 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
175°C (TJ)
-
DPAK+
MOSFET (Metal Oxide)
U-MOSVIII-H
-
100 V
33A (Ta)
10V
9.7mOhm @ 16.5A, 10V
4V @ 500µA
28 nC @ 10 V
±20V
2050 pF @ 10 V
125W (Tc)
-
TK160F10N1,LXGQ
1+
$25.3521
5+
$23.9437
10+
$22.5352
Quantity
3,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
175°C
-
TO-220SM(W)
MOSFET (Metal Oxide)
U-MOSVIII-H
-
100 V
160A (Ta)
10V
2.4mOhm @ 80A, 10V
4V @ 1mA
121 nC @ 10 V
±20V
8510 pF @ 10 V
375W (Tc)
-
TPH3300CNH,L1Q
1+
$1.9014
5+
$1.7958
10+
$1.6901
Quantity
2,820 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
150°C (TJ)
-
8-SOP Advance (5x5)
MOSFET (Metal Oxide)
U-MOSVIII-H
-
150 V
18A (Ta)
10V
33mOhm @ 9A, 10V
4V @ 300µA
10.6 nC @ 10 V
±20V
1100 pF @ 75 V
1.6W (Ta), 57W (Tc)
-
TPN1600ANH,L1Q
1+
$10.1408
5+
$9.5775
10+
$9.0141
Quantity
1,470 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
150°C (TJ)
-
8-TSON Advance (3.1x3.1)
MOSFET (Metal Oxide)
U-MOSVIII-H
-
100 V
17A (Tc)
10V
16mOhm @ 8.5A, 10V
4V @ 200µA
19 nC @ 10 V
±20V
1600 pF @ 50 V
700mW (Ta), 42W (Tc)
-
TK7S10N1Z,LQ
1+
$1.0141
5+
$0.9577
10+
$0.9014
Quantity
1,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
175°C (TJ)
-
DPAK+
MOSFET (Metal Oxide)
U-MOSVIII-H
-
100 V
7A (Ta)
10V
48mOhm @ 3.5A, 10V
4V @ 100µA
7.1 nC @ 10 V
±20V
470 pF @ 10 V
50W (Tc)
-
TPW4R50ANH,L1Q
1+
$3.1690
5+
$2.9930
10+
$2.8169
Quantity
750 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerWDFN
150°C (TJ)
-
8-DSOP Advance
MOSFET (Metal Oxide)
U-MOSVIII-H
-
100 V
92A (Tc)
10V
4.5mOhm @ 46A, 10V
4V @ 1mA
58 nC @ 10 V
±20V
5200 pF @ 50 V
800mW (Ta), 142W (Tc)
-
TPN11006NL,LQ
1+
$1.5211
5+
$1.4366
10+
$1.3521
Quantity
10 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
150°C (TJ)
-
8-TSON Advance (3.1x3.1)
MOSFET (Metal Oxide)
U-MOSVIII-H
-
60 V
17A (Tc)
4.5V, 10V
11.4mOhm @ 8.5A, 10V
2.5V @ 200µA
23 nC @ 10 V
±20V
2000 pF @ 30 V
700mW (Ta), 30W (Tc)
-

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.