CoolMOS™PFD7 Series, Single FETs, MOSFETs

Results:
10
Manufacturer
Series
Power Dissipation (Max)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
Package / Case
Mounting Type
Drain to Source Voltage (Vdss)
Operating Temperature
FET Feature
FET Type
Grade
Qualification
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Results remaining10
Applied Filters:
CoolMOS™PFD7
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseFET TypeGradeSupplier Device PackageTechnologyFET FeatureSeriesDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
IPN60R1K5PFD7SATMA1
MOSFET N-CH 600V 3.6A SOT223
1+
$1.5211
5+
$1.4366
10+
$1.3521
Quantity
15,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
TO-261-4, TO-261AA
N-Channel
-
PG-SOT223-3
MOSFET (Metal Oxide)
-
CoolMOS™PFD7
600 V
3.6A (Tc)
10V
1.5Ohm @ 700mA, 10V
4.5V @ 40µA
4.6 nC @ 10 V
±20V
169 pF @ 400 V
6W (Tc)
-
IPS60R1K0PFD7SAKMA1
MOSFET N-CH 650V 4.7A TO251-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-40°C ~ 150°C (TJ)
TO-251-3 Short Leads, IPak, TO-251AA
N-Channel
-
PG-TO251-3
MOSFET (Metal Oxide)
-
CoolMOS™PFD7
650 V
4.7A (Tc)
10V
1Ohm @ 1A, 10V
4.5V @ 50µA
6 nC @ 10 V
±20V
230 pF @ 400 V
26W (Tc)
-
IPS60R360PFD7SAKMA1
MOSFET N-CH 650V 10A TO251-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-40°C ~ 150°C (TJ)
TO-251-3 Short Leads, IPak, TO-251AA
N-Channel
-
PG-TO251-3
MOSFET (Metal Oxide)
-
CoolMOS™PFD7
650 V
10A (Tc)
10V
360mOhm @ 2.9A, 10V
4.5V @ 140µA
12.7 nC @ 10 V
±20V
534 pF @ 400 V
43W (Tc)
-
IPS60R210PFD7SAKMA1
MOSFET N-CH 650V 16A TO251-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-40°C ~ 150°C (TJ)
TO-251-3 Short Leads, IPak, TO-251AA
N-Channel
-
PG-TO251-3
MOSFET (Metal Oxide)
-
CoolMOS™PFD7
650 V
16A (Tc)
10V
210mOhm @ 4.9A, 10V
4.5V @ 240µA
23 nC @ 10 V
±20V
1015 pF @ 400 V
64W (Tc)
-
IPAN60R210PFD7SXKSA1
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-40°C ~ 150°C (TJ)
TO-220-3 Full Pack
N-Channel
-
PG-TO220-FP
MOSFET (Metal Oxide)
-
CoolMOS™PFD7
650 V
16A (Tc)
10V
210mOhm @ 4.9A, 10V
4.5V @ 240µA
23 nC @ 10 V
±20V
1015 pF @ 400 V
25W (Tc)
-
IPS60R600PFD7SAKMA1
MOSFET N-CH 650V 6A TO251-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-40°C ~ 150°C (TJ)
TO-251-3 Short Leads, IPak, TO-251AA
N-Channel
-
PG-TO251-3
MOSFET (Metal Oxide)
-
CoolMOS™PFD7
650 V
6A (Tc)
10V
600mOhm @ 1.7A, 10V
4.5V @ 80µA
8.5 nC @ 10 V
±20V
344 pF @ 400 V
31W (Tc)
-
IPN60R360PFD7SATMA1
MOSFET N-CH 600V 10A SOT223
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
TO-261-3
N-Channel
-
PG-SOT223-3-1
MOSFET (Metal Oxide)
-
CoolMOS™PFD7
600 V
10A (Tc)
10V
360mOhm @ 2.9A, 10V
4.5V @ 140µA
12.7 nC @ 10 V
±20V
534 pF @ 400 V
7W (Tc)
-
IPAN60R125PFD7SXKSA1
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-40°C ~ 150°C (TJ)
TO-220-3 Full Pack
N-Channel
-
PG-TO220-FP
MOSFET (Metal Oxide)
-
CoolMOS™PFD7
650 V
25A (Tc)
10V
125mOhm @ 7.8A, 10V
4.5V @ 390µA
36 nC @ 10 V
±20V
1503 pF @ 400 V
32W (Tc)
-
IPN60R2K0PFD7SATMA1
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
TO-261-3
N-Channel
-
PG-SOT223-3-1
MOSFET (Metal Oxide)
-
CoolMOS™PFD7
600 V
3A (Tc)
10V
2Ohm @ 500mA, 10V
4.5V @ 30µA
3.8 nC @ 10 V
±20V
134 pF @ 400 V
6W (Tc)
-
IPAN60R360PFD7SXKSA1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-40°C ~ 150°C (TJ)
TO-220-3 Full Pack
N-Channel
-
PG-TO220-FP
MOSFET (Metal Oxide)
-
CoolMOS™PFD7
650 V
10A (Tc)
10V
360mOhm @ 2.9A, 10V
4.5V @ 140µA
12.7 nC @ 10 V
±20V
534 pF @ 400 V
23W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.