SuperFET® III Series, Single FETs, MOSFETs

Results:
114
Manufacturer
Series
Power Dissipation (Max)
Input Capacitance (Ciss) (Max) @ Vds
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Operating Temperature
Vgs (Max)
FET Type
Grade
Mounting Type
Qualification
Technology
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
Results remaining114
Applied Filters:
SuperFET® III
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseDrain to Source Voltage (Vdss)GradeSupplier Device PackageTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSeriesDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
FCD360N65S3R0
MOSFET N-CH 650V 10A DPAK
1+
$1.0141
5+
$0.9577
10+
$0.9014
Quantity
54,011 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
650 V
-
TO-252 (DPAK)
MOSFET (Metal Oxide)
-
10A (Tc)
4.5V @ 1mA
SuperFET® III
10V
360mOhm @ 5A, 10V
18 nC @ 10 V
±30V
730 pF @ 400 V
83W (Tc)
-
FCP099N65S3
MOSFET N-CH 650V 30A TO220-3
1+
$3.8028
5+
$3.5915
10+
$3.3803
Quantity
21,527 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
650 V
-
TO-220-3
MOSFET (Metal Oxide)
-
30A (Tc)
4.5V @ 3mA
SuperFET® III
10V
99mOhm @ 15A, 10V
61 nC @ 10 V
±30V
2480 pF @ 400 V
227W (Tc)
-
NTB082N65S3F
MOSFET N-CH 650V 40A D2PAK
1+
$11.4085
5+
$10.7746
10+
$10.1408
Quantity
16,140 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
650 V
-
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
40A (Tc)
5V @ 4mA
SuperFET® III
10V
82mOhm @ 20A, 10V
81 nC @ 10 V
±30V
3410 pF @ 400 V
313W (Tc)
-
FCH067N65S3-F155
MOSFET N-CH 650V 44A TO247
1+
$11.4085
5+
$10.7746
10+
$10.1408
Quantity
13,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
650 V
-
TO-247-3
MOSFET (Metal Oxide)
-
44A (Tc)
4.5V @ 4.4mA
SuperFET® III
10V
67mOhm @ 22A, 10V
78 nC @ 10 V
±30V
3090 pF @ 400 V
312W (Tc)
-
FCB070N65S3
MOSFET N-CH 650V 44A D2PAK
1+
$8.6197
5+
$8.1408
10+
$7.6620
Quantity
10,580 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
650 V
-
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
44A (Tc)
4.5V @ 4.4mA
SuperFET® III
10V
70mOhm @ 22A, 10V
78 nC @ 10 V
±30V
3090 pF @ 400 V
312W (Tc)
-
FCPF067N65S3
MOSFET N-CH 650V 44A TO220F
1+
$10.1408
5+
$9.5775
10+
$9.0141
Quantity
8,779 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
650 V
-
TO-220F-3
MOSFET (Metal Oxide)
-
44A (Tc)
4.5V @ 4.4mA
SuperFET® III
10V
67mOhm @ 22A, 10V
78 nC @ 10 V
±30V
3090 pF @ 400 V
46W (Tc)
-
FCMT099N65S3
MOSFET N-CH 650V 30A POWER88
1+
$34.2254
5+
$32.3239
10+
$30.4225
Quantity
5,429 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
4-PowerTSFN
650 V
-
Power88
MOSFET (Metal Oxide)
-
30A (Tc)
4.5V @ 3mA
SuperFET® III
10V
99mOhm @ 15A, 10V
56 nC @ 10 V
±30V
2270 pF @ 400 V
227W (Tc)
-
FCH023N65S3L4
MOSFET N-CH 650V 75A TO247
1+
$17.7465
5+
$16.7606
10+
$15.7746
Quantity
5,293 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-4
650 V
-
TO-247-4
MOSFET (Metal Oxide)
-
75A (Tc)
4.5V @ 7.5mA
SuperFET® III
10V
23mOhm @ 37.5A, 10V
222 nC @ 10 V
±30V
7160 pF @ 400 V
595W (Tc)
-
FCH099N65S3-F155
MOSFET N-CH 650V 30A TO247-3
1+
$6.3380
5+
$5.9859
10+
$5.6338
Quantity
5,214 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
650 V
-
TO-247-3
MOSFET (Metal Oxide)
-
30A (Tc)
4.5V @ 3mA
SuperFET® III
10V
99mOhm @ 15A, 10V
61 nC @ 10 V
±30V
2480 pF @ 400 V
227W (Tc)
-
FCD260N65S3
MOSFET N-CH 650V 12A TO252
1+
$11.4085
5+
$10.7746
10+
$10.1408
Quantity
4,920 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
650 V
-
TO-252AA
MOSFET (Metal Oxide)
-
12A (Tc)
4.5V @ 1.2mA
SuperFET® III
10V
260mOhm @ 6A, 10V
24 nC @ 10 V
±30V
1010 pF @ 400 V
90W (Tc)
-
FCB260N65S3
MOSFET N-CH 650V 12A D2PAK
1+
$1.7746
5+
$1.6761
10+
$1.5775
Quantity
3,775 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
650 V
-
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
12A (Tc)
4.5V @ 1.2mA
SuperFET® III
10V
260mOhm @ 6A, 10V
24 nC @ 10 V
±30V
1010 pF @ 400 V
90W (Tc)
-
NTHL040N65S3F
MOSFET N-CH 650V 65A TO247-3
1+
$50.7042
5+
$47.8873
10+
$45.0704
Quantity
3,600 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
650 V
-
TO-247-3
MOSFET (Metal Oxide)
-
65A (Tc)
5V @ 6.5mA
SuperFET® III
10V
40mOhm @ 32.5A, 10V
158 nC @ 10 V
±30V
5940 pF @ 400 V
446W (Tc)
-
NTP095N65S3HF
MOSFET N-CH 650V 36A TO220-3
1+
$8.8732
5+
$8.3803
10+
$7.8873
Quantity
3,100 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
650 V
-
TO-220-3
MOSFET (Metal Oxide)
-
36A (Tc)
5V @ 860µA
SuperFET® III
10V
95mOhm @ 18A, 10V
66 nC @ 10 V
±30V
2930 pF @ 400 V
272W (Tc)
-
FCB125N65S3
MOSFET N-CH 650V 24A TO263
1+
$202.8169
5+
$191.5493
10+
$180.2817
Quantity
2,880 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
650 V
-
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
24A (Tc)
4.5V @ 590µA
SuperFET® III
10V
125mOhm @ 12A, 10V
46 nC @ 10 V
±30V
1940 pF @ 400 V
181W (Tc)
-
FCMT180N65S3
MOSFET N-CH 650V 17A POWER88
1+
$3.0423
5+
$2.8732
10+
$2.7042
Quantity
2,730 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
4-PowerTSFN
650 V
-
Power88
MOSFET (Metal Oxide)
-
17A (Tc)
4.5V @ 1.8mA
SuperFET® III
10V
180mOhm @ 8.5A, 10V
33 nC @ 10 V
±30V
1350 pF @ 400 V
139W (Tc)
-
NTHL082N65S3F
MOSFET N-CH 650V 40A TO247-3
1+
$114.0845
5+
$107.7465
10+
$101.4085
Quantity
2,688 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
650 V
-
TO-247-3
MOSFET (Metal Oxide)
-
40A (Tc)
5V @ 4mA
SuperFET® III
10V
82mOhm @ 20A, 10V
81 nC @ 10 V
±30V
3410 pF @ 400 V
313W (Tc)
-
NTD250N65S3H
POWER MOSFET, N-CHANNEL, SUPERFE
1+
$1.2676
5+
$1.1972
10+
$1.1268
Quantity
2,660 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
650 V
-
TO-252 (DPAK)
MOSFET (Metal Oxide)
-
13A (Tc)
4V @ 1.1mA
SuperFET® III
10V
250mOhm @ 6.5A, 10V
24 nC @ 10 V
±30V
1261 pF @ 400 V
106W (Tc)
-
FCD600N65S3R0
MOSFET N-CH 650V 6A DPAK
1+
$3.0423
5+
$2.8732
10+
$2.7042
Quantity
2,500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
650 V
-
TO-252 (DPAK)
MOSFET (Metal Oxide)
-
6A (Tc)
4.5V @ 600µA
SuperFET® III
10V
600mOhm @ 3A, 10V
11 nC @ 10 V
±30V
465 pF @ 400 V
54W (Tc)
-
NTD360N65S3H
POWER MOSFET, N-CHANNEL, SUPERFE
1+
$5.0704
5+
$4.7887
10+
$4.5070
Quantity
2,500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
650 V
-
TO-252 (DPAK)
MOSFET (Metal Oxide)
-
10A (Tc)
4V @ 700µA
SuperFET® III
10V
360mOhm @ 5A, 10V
17.5 nC @ 10 V
±30V
916 pF @ 400 V
83W (Tc)
-
FCPF125N65S3
MOSFET N-CH 650V 24A TO220F
1+
$1.5211
5+
$1.4366
10+
$1.3521
Quantity
2,076 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
650 V
-
TO-220F
MOSFET (Metal Oxide)
-
24A (Tc)
4.5V @ 2.4mA
SuperFET® III
10V
125mOhm @ 12A, 10V
44 nC @ 10 V
±30V
1790 pF @ 400 V
38W (Tc)
-

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.