HiPerFET™, Ultra X2 Series, Single FETs, MOSFETs

Results:
45
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Power Dissipation (Max)
Supplier Device Package
Current - Continuous Drain (Id) @ 25°C
Package / Case
Vgs(th) (Max) @ Id
Mounting Type
Operating Temperature
FET Type
Drain to Source Voltage (Vdss)
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
Grade
Qualification
Results remaining45
Applied Filters:
HiPerFET™, Ultra X2
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseSupplier Device PackageDrain to Source Voltage (Vdss)GradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CSeriesDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
IXFH34N65X2
MOSFET N-CH 650V 34A TO247
1+
$3.5493
5+
$3.3521
10+
$3.1549
Quantity
18,620 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247 (IXTH)
650 V
-
MOSFET (Metal Oxide)
-
34A (Tc)
HiPerFET™, Ultra X2
10V
105mOhm @ 17A, 10V
5.5V @ 2.5mA
56 nC @ 10 V
±30V
3330 pF @ 25 V
540W (Tc)
-
IXFH60N65X2
MOSFET N-CH 650V 60A TO247
1+
$19.0141
5+
$17.9577
10+
$16.9014
Quantity
15,892 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247 (IXTH)
650 V
-
MOSFET (Metal Oxide)
-
60A (Tc)
HiPerFET™, Ultra X2
10V
52mOhm @ 30A, 10V
5.5V @ 4mA
107 nC @ 10 V
±30V
6180 pF @ 25 V
780W (Tc)
-
IXFP34N65X2
MOSFET N-CH 650V 34A TO220AB
1+
$12.6761
5+
$11.9718
10+
$11.2676
Quantity
9,923 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220-3
650 V
-
MOSFET (Metal Oxide)
-
34A (Tc)
HiPerFET™, Ultra X2
10V
105mOhm @ 17A, 10V
5.5V @ 2.5mA
56 nC @ 10 V
±30V
3330 pF @ 25 V
540W (Tc)
-
IXFA22N65X2
MOSFET N-CH 650V 22A TO263
1+
$5.0704
5+
$4.7887
10+
$4.5070
Quantity
6,400 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263HV
650 V
-
MOSFET (Metal Oxide)
-
22A (Tc)
HiPerFET™, Ultra X2
10V
160mOhm @ 11A, 10V
5.5V @ 1.5mA
38 nC @ 10 V
±30V
2310 pF @ 25 V
390W (Tc)
-
IXFH80N65X2
MOSFET N-CH 650V 80A TO247
1+
$5.5775
5+
$5.2676
10+
$4.9577
Quantity
2,438 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247 (IXTH)
650 V
-
MOSFET (Metal Oxide)
-
80A (Tc)
HiPerFET™, Ultra X2
10V
40mOhm @ 40A, 10V
5.5V @ 4mA
143 nC @ 10 V
±30V
8245 pF @ 25 V
890W (Tc)
-
IXFP22N65X2M
MOSFET N-CH 650V 22A TO220
1+
$4.3099
5+
$4.0704
10+
$3.8310
Quantity
2,300 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack, Isolated Tab
TO-220 Isolated Tab
650 V
-
MOSFET (Metal Oxide)
-
22A (Tc)
HiPerFET™, Ultra X2
10V
145mOhm @ 11A, 10V
5V @ 1.5mA
37 nC @ 10 V
±30V
2190 pF @ 25 V
37W (Tc)
-
IXFN150N65X2
MOSFET N-CH 650V 145A SOT227B
Contact us
Quantity
2,201 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
SOT-227-4, miniBLOC
SOT-227B
650 V
-
MOSFET (Metal Oxide)
-
145A (Tc)
HiPerFET™, Ultra X2
10V
17mOhm @ 75A, 10V
5V @ 8mA
355 nC @ 10 V
±30V
21000 pF @ 25 V
1040W (Tc)
-
IXFA12N65X2-TRL
MOSFET N-CH 650V 12A TO263
1+
$7.6056
5+
$7.1831
10+
$6.7606
Quantity
1,600 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
650 V
-
MOSFET (Metal Oxide)
-
12A (Tc)
HiPerFET™, Ultra X2
10V
310mOhm @ 6A, 10V
5V @ 250µA
18.5 nC @ 10 V
±30V
1134 pF @ 25 V
180W (Tc)
-
IXFA12N65X2
MOSFET N-CH 650V 12A TO263AA
1+
$5.0704
5+
$4.7887
10+
$4.5070
Quantity
1,300 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AA (IXFA)
650 V
-
MOSFET (Metal Oxide)
-
12A (Tc)
HiPerFET™, Ultra X2
10V
310mOhm @ 6A, 10V
5V @ 250µA
18.5 nC @ 10 V
±30V
1134 pF @ 25 V
180W (Tc)
-
IXFT80N65X2HV
MOSFET N-CH 650V 80A TO268HV
1+
$38.0282
5+
$35.9155
10+
$33.8028
Quantity
540 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
TO-268HV (IXFT)
650 V
-
MOSFET (Metal Oxide)
-
80A (Tc)
HiPerFET™, Ultra X2
10V
-
5V @ 4mA
140 nC @ 10 V
±30V
8300 pF @ 25 V
890W (Tc)
-
IXFP34N65X2M
MOSFET N-CH 650V 34A TO220
1+
$5.5775
5+
$5.2676
10+
$4.9577
Quantity
139 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack, Isolated Tab
TO-220 Isolated Tab
650 V
-
MOSFET (Metal Oxide)
-
34A (Tc)
HiPerFET™, Ultra X2
10V
100mOhm @ 17A, 10V
5V @ 1.5mA
56 nC @ 10 V
±30V
3230 pF @ 25 V
40W (Tc)
-
IXFB150N65X2
MOSFET N-CH 650V 150A PLUS264
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-264-3, TO-264AA
PLUS264™
650 V
-
MOSFET (Metal Oxide)
-
150A (Tc)
HiPerFET™, Ultra X2
10V
17mOhm @ 75A, 10V
5.5V @ 8mA
430 nC @ 10 V
±30V
20400 pF @ 25 V
1560W (Tc)
-
IXFY8N65X2
MOSFET N-CH 650V 8A TO252AA
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
650 V
-
MOSFET (Metal Oxide)
-
8A (Tc)
HiPerFET™, Ultra X2
10V
450mOhm @ 4A, 10V
5V @ 250µA
11 nC @ 10 V
±30V
790 pF @ 25 V
150W (Tc)
-
IXFP8N65X2M
MOSFET N-CH 650V 8A TO220
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack, Isolated Tab
TO-220 Isolated Tab
650 V
-
MOSFET (Metal Oxide)
-
8A (Tc)
HiPerFET™, Ultra X2
10V
450mOhm @ 4A, 10V
5V @ 250µA
11 nC @ 10 V
±30V
790 pF @ 25 V
150W (Tc)
-
IXFP36N55X2
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
-
-
-
-
-
-
-
-
-
HiPerFET™, Ultra X2
-
-
-
-
-
-
-
-
IXFA36N55X2
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
-
-
-
-
-
-
-
-
-
HiPerFET™, Ultra X2
-
-
-
-
-
-
-
-
IXFP12N65X2
MOSFET N-CH 650V 12A TO220AB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220-3
650 V
-
MOSFET (Metal Oxide)
-
12A (Tc)
HiPerFET™, Ultra X2
10V
310mOhm @ 6A, 10V
5V @ 250µA
18.5 nC @ 10 V
±30V
1134 pF @ 25 V
180W (Tc)
-
IXFX100N65X2
MOSFET N-CH 650V 100A PLUS247-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3 Variant
PLUS247™-3
650 V
-
MOSFET (Metal Oxide)
-
100A (Tc)
HiPerFET™, Ultra X2
10V
30mOhm @ 50A, 10V
5.5V @ 4mA
180 nC @ 10 V
±30V
11300 pF @ 25 V
1040W (Tc)
-
IXFH26N65X2
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247 (IXFH)
650 V
-
MOSFET (Metal Oxide)
-
26A (Tc)
HiPerFET™, Ultra X2
10V
130mOhm @ 500mA, 10V
5V @ 2.5mA
45 nC @ 10 V
±30V
2450 pF @ 25 V
460W (Tc)
-
IXFK120N65X2
MOSFET N-CH 650V 120A TO264
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-264-3, TO-264AA
TO-264AA
650 V
-
MOSFET (Metal Oxide)
-
120A (Tc)
HiPerFET™, Ultra X2
10V
24mOhm @ 60A, 10V
5.5V @ 8mA
225 nC @ 10 V
±30V
15500 pF @ 25 V
1250W (Tc)
-

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.