Military, MIL-PRF-19500/543 Series, Single FETs, MOSFETs

Results:
11
Manufacturer
Series
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
Operating Temperature
FET Feature
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Vgs(th) (Max) @ Id
Power Dissipation (Max)
Package / Case
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Results remaining11
Applied Filters:
Military, MIL-PRF-19500/543
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseSupplier Device PackageTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Power Dissipation (Max)Input Capacitance (Ciss) (Max) @ Vds
JANTX2N6766T1
MOSFET N-CH 200V 30A TO254AA
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-254-3, TO-254AA (Straight Leads)
TO-254AA
MOSFET (Metal Oxide)
-
30A (Tc)
4V @ 250µA
Military, MIL-PRF-19500/543
200 V
10V
90mOhm @ 30A, 10V
115 nC @ 10 V
±20V
4W (Ta), 150W (Tc)
-
JANTX2N6768T1
MOSFET N-CH 400V 14A TO3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-254-3, TO-254AA (Straight Leads)
TO-3
MOSFET (Metal Oxide)
-
14A (Tc)
4V @ 250µA
Military, MIL-PRF-19500/543
400 V
10V
400mOhm @ 14A, 10V
110 nC @ 10 V
±20V
4W (Ta), 150W (Tc)
-
JANTX2N6770T1
MOSFET N-CH 500V 12A TO254AA
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-254-3, TO-254AA (Straight Leads)
TO-254AA
MOSFET (Metal Oxide)
-
12A (Tc)
4V @ 250µA
Military, MIL-PRF-19500/543
500 V
10V
500mOhm @ 12A, 10V
120 nC @ 10 V
±20V
4W (Ta), 150W (Tc)
-
JANTXV2N6764T1
MOSFET N-CH 100V 38A TO254AA
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-254-3, TO-254AA (Straight Leads)
TO-254AA
MOSFET (Metal Oxide)
-
38A (Tc)
4V @ 250µA
Military, MIL-PRF-19500/543
100 V
10V
65mOhm @ 38A, 10V
125 nC @ 10 V
±20V
4W (Ta), 150W (Tc)
-
JANTXV2N6766T1
MOSFET N-CH 200V 30A TO254AA
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-254-3, TO-254AA (Straight Leads)
TO-254AA
MOSFET (Metal Oxide)
-
30A (Tc)
4V @ 250µA
Military, MIL-PRF-19500/543
200 V
10V
90mOhm @ 30A, 10V
115 nC @ 10 V
±20V
4W (Ta), 150W (Tc)
-
JANTXV2N6768T1
MOSFET N-CH 400V 14A TO254AA
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-254-3, TO-254AA (Straight Leads)
TO-254AA
MOSFET (Metal Oxide)
-
14A (Tc)
4V @ 250µA
Military, MIL-PRF-19500/543
400 V
10V
400mOhm @ 14A, 10V
110 nC @ 10 V
±20V
4W (Ta), 150W (Tc)
-
JANTXV2N6770T1
MOSFET N-CH 500V 12A TO254AA
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-254-3, TO-254AA (Straight Leads)
TO-254AA
MOSFET (Metal Oxide)
-
12A (Tc)
4V @ 250µA
Military, MIL-PRF-19500/543
500 V
10V
500mOhm @ 12A, 10V
120 nC @ 10 V
±20V
4W (Ta), 150W (Tc)
-
JAN2N6764T1
MOSFET N-CH 100V 38A TO254AA
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-254-3, TO-254AA (Straight Leads)
TO-254AA
MOSFET (Metal Oxide)
-
38A (Tc)
4V @ 250µA
Military, MIL-PRF-19500/543
100 V
10V
65mOhm @ 38A, 10V
125 nC @ 10 V
±20V
4W (Ta), 150W (Tc)
-
JAN2N6766T1
MOSFET N-CH 200V 30A TO254AA
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-254-3, TO-254AA (Straight Leads)
TO-254AA
MOSFET (Metal Oxide)
-
30A (Tc)
4V @ 250µA
Military, MIL-PRF-19500/543
200 V
10V
90mOhm @ 30A, 10V
115 nC @ 10 V
±20V
4W (Ta), 150W (Tc)
-
JAN2N6768T1
MOSFET N-CH 400V 14A TO254AA
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-254-3, TO-254AA (Straight Leads)
TO-254AA
MOSFET (Metal Oxide)
-
14A (Tc)
4V @ 250µA
Military, MIL-PRF-19500/543
400 V
10V
400mOhm @ 14A, 10V
110 nC @ 10 V
±20V
4W (Ta), 150W (Tc)
-
JAN2N6770T1
MOSFET N-CH 500V 12A TO254AA
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-254-3, TO-254AA (Straight Leads)
TO-254AA
MOSFET (Metal Oxide)
-
12A (Tc)
4V @ 250µA
Military, MIL-PRF-19500/543
500 V
10V
500mOhm @ 12A, 10V
120 nC @ 10 V
±20V
4W (Ta), 150W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.