TrenchMV™ Series, Single FETs, MOSFETs

Results:
70
Manufacturer
Series
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Package / Case
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Mounting Type
Vgs (Max)
Operating Temperature
FET Feature
FET Type
Grade
Qualification
Technology
Drive Voltage (Max Rds On, Min Rds On)
Results remaining70
Applied Filters:
TrenchMV™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypePackage / CaseDrain to Source Voltage (Vdss)Operating TemperatureGradeSupplier Device PackageTechnologySeriesFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
IXTY64N055T
MOSFET N-CH 55V 64A TO252
1+
$5.0704
5+
$4.7887
10+
$4.5070
Quantity
1,960 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
55 V
-55°C ~ 175°C (TJ)
-
TO-252AA
MOSFET (Metal Oxide)
TrenchMV™
-
64A (Tc)
4V @ 25µA
10V
13mOhm @ 500mA, 10V
37 nC @ 10 V
±20V
1420 pF @ 25 V
130W (Tc)
-
IXTH250N075T
MOSFET N-CH 75V 250A TO247
1+
$11.4085
5+
$10.7746
10+
$10.1408
Quantity
50 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
75 V
-55°C ~ 175°C (TJ)
-
TO-247 (IXTH)
MOSFET (Metal Oxide)
TrenchMV™
-
250A (Tc)
4V @ 250µA
10V
4mOhm @ 50A, 10V
200 nC @ 10 V
±20V
9900 pF @ 25 V
550W (Tc)
-
IXTA88N085T
MOSFET N-CH 85V 88A TO263
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
85 V
-55°C ~ 175°C (TJ)
-
TO-263AA
MOSFET (Metal Oxide)
TrenchMV™
-
88A (Tc)
4V @ 100µA
10V
11mOhm @ 25A, 10V
69 nC @ 10 V
±20V
3140 pF @ 25 V
230W (Tc)
-
IXTQ160N075T
MOSFET N-CH 75V 160A TO3P
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-3P-3, SC-65-3
75 V
-55°C ~ 175°C (TJ)
-
TO-3P
MOSFET (Metal Oxide)
TrenchMV™
-
160A (Tc)
4V @ 250µA
10V
6mOhm @ 25A, 10V
112 nC @ 10 V
±20V
4950 pF @ 25 V
360W (Tc)
-
IXTQ152N085T
MOSFET N-CH 85V 152A TO3P
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-3P-3, SC-65-3
85 V
-55°C ~ 175°C (TJ)
-
TO-3P
MOSFET (Metal Oxide)
TrenchMV™
-
152A (Tc)
4V @ 250µA
10V
7mOhm @ 25A, 10V
114 nC @ 10 V
±20V
5500 pF @ 25 V
360W (Tc)
-
IXTH152N085T
MOSFET N-CH 85V 152A TO247
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
85 V
-55°C ~ 175°C (TJ)
-
TO-247 (IXTH)
MOSFET (Metal Oxide)
TrenchMV™
-
152A (Tc)
4V @ 250µA
10V
7mOhm @ 25A, 10V
114 nC @ 10 V
±20V
5500 pF @ 25 V
360W (Tc)
-
IXTH160N075T
MOSFET N-CH 75V 160A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
75 V
-55°C ~ 175°C (TJ)
-
TO-247 (IXTH)
MOSFET (Metal Oxide)
TrenchMV™
-
160A (Tc)
4V @ 250µA
10V
6mOhm @ 25A, 10V
112 nC @ 10 V
±20V
4950 pF @ 25 V
360W (Tc)
-
IXTC220N055T
MOSFET N-CH 55V 130A ISOPLUS220
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
ISOPLUS220™
55 V
-55°C ~ 175°C (TJ)
-
ISOPLUS220™
MOSFET (Metal Oxide)
TrenchMV™
-
130A (Tc)
4V @ 250µA
10V
4.4mOhm @ 25A, 10V
158 nC @ 10 V
±20V
7200 pF @ 25 V
150W (Tc)
-
IXTC160N10T
MOSFET N-CH 100V 83A ISOPLUS220
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
ISOPLUS220™
100 V
-55°C ~ 175°C (TJ)
-
ISOPLUS220™
MOSFET (Metal Oxide)
TrenchMV™
-
83A (Tc)
4.5V @ 250µA
10V
7.5mOhm @ 25A, 10V
132 nC @ 10 V
±20V
6600 pF @ 25 V
140W (Tc)
-
IXTA80N10T7
MOSFET N-CH 100V 80A TO263-7
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-7, D²Pak (6 Leads + Tab)
100 V
-55°C ~ 175°C (TJ)
-
TO-263-7 (IXTA)
MOSFET (Metal Oxide)
TrenchMV™
-
80A (Tc)
4.5V @ 100µA
10V
14mOhm @ 25A, 10V
60 nC @ 10 V
±30V
3040 pF @ 25 V
230W (Tc)
-
IXTY12N06TTRL
MOSFET N-CH 60V 12A TO252
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
60 V
-55°C ~ 175°C (TJ)
-
TO-252AA
MOSFET (Metal Oxide)
TrenchMV™
-
12A (Tc)
4V @ 25µA
10V
85mOhm @ 6A, 10V
3.4 nC @ 10 V
±20V
256 pF @ 25 V
33W (Tc)
-
IXTA240N055T7
MOSFET N-CH 55V 240A TO263-7
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-7, D²Pak (6 Leads + Tab)
55 V
-55°C ~ 175°C (TJ)
-
TO-263-7 (IXTA)
MOSFET (Metal Oxide)
TrenchMV™
-
240A (Tc)
4V @ 250µA
10V
3.6mOhm @ 25A, 10V
170 nC @ 10 V
±20V
7600 pF @ 25 V
480W (Tc)
-
IXTA220N075T7
MOSFET N-CH 75V 220A TO263-7
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-7, D²Pak (6 Leads + Tab)
75 V
-55°C ~ 175°C (TJ)
-
TO-263-7 (IXTA)
MOSFET (Metal Oxide)
TrenchMV™
-
220A (Tc)
4V @ 250µA
10V
4.5mOhm @ 25A, 10V
165 nC @ 10 V
±20V
7700 pF @ 25 V
480W (Tc)
-
IXTA200N085T7
MOSFET N-CH 85V 200A TO263-7
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-7, D²Pak (6 Leads + Tab)
85 V
-55°C ~ 175°C (TJ)
-
TO-263-7 (IXTA)
MOSFET (Metal Oxide)
TrenchMV™
-
200A (Tc)
4V @ 250µA
10V
5mOhm @ 25A, 10V
152 nC @ 10 V
±20V
7600 pF @ 25 V
480W (Tc)
-
IXTA200N075T7
MOSFET N-CH 75V 200A TO263-7
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-7, D²Pak (6 Leads + Tab)
75 V
-55°C ~ 175°C (TJ)
-
TO-263-7 (IXTA)
MOSFET (Metal Oxide)
TrenchMV™
-
200A (Tc)
4V @ 250µA
10V
5mOhm @ 25A, 10V
160 nC @ 10 V
±20V
6800 pF @ 25 V
430W (Tc)
-
IXTA182N055T7
MOSFET N-CH 55V 182A TO263-7
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-7, D²Pak (6 Leads + Tab)
55 V
-55°C ~ 175°C (TJ)
-
TO-263-7 (IXTA)
MOSFET (Metal Oxide)
TrenchMV™
-
182A (Tc)
4V @ 250µA
10V
5mOhm @ 25A, 10V
114 nC @ 10 V
±20V
4850 pF @ 25 V
360W (Tc)
-
IXTA160N075T7
MOSFET N-CH 75V 160A TO263-7
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-7, D²Pak (6 Leads + Tab)
75 V
-55°C ~ 175°C (TJ)
-
TO-263-7 (IXTA)
MOSFET (Metal Oxide)
TrenchMV™
-
160A (Tc)
4V @ 250µA
10V
6mOhm @ 25A, 10V
112 nC @ 10 V
±20V
4950 pF @ 25 V
360W (Tc)
-
IXTA160N075T
MOSFET N-CH 75V 160A TO263
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
75 V
-55°C ~ 175°C (TJ)
-
TO-263AA
MOSFET (Metal Oxide)
TrenchMV™
-
160A (Tc)
4V @ 250µA
10V
6mOhm @ 25A, 10V
112 nC @ 10 V
±20V
4950 pF @ 25 V
360W (Tc)
-
IXTA152N085T
MOSFET N-CH 85V 152A TO263
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
85 V
-55°C ~ 175°C (TJ)
-
TO-263AA
MOSFET (Metal Oxide)
TrenchMV™
-
152A (Tc)
4V @ 250µA
10V
7mOhm @ 25A, 10V
114 nC @ 10 V
±20V
5500 pF @ 25 V
360W (Tc)
-
IXTA110N055T
MOSFET N-CH 55V 110A TO263
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
55 V
-55°C ~ 175°C (TJ)
-
TO-263AA
MOSFET (Metal Oxide)
TrenchMV™
-
110A (Tc)
4V @ 100µA
10V
7mOhm @ 25A, 10V
67 nC @ 10 V
±20V
3080 pF @ 25 V
230W (Tc)
-

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.