U-MOSVII Series, Single FETs, MOSFETs

Results:
13
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Supplier Device Package
Package / Case
Power Dissipation (Max)
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Vgs (Max)
Operating Temperature
Drain to Source Voltage (Vdss)
FET Type
FET Feature
Grade
Mounting Type
Qualification
Technology
Results remaining13
Applied Filters:
U-MOSVII
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypeOperating TemperatureDrain to Source Voltage (Vdss)Package / CaseGradeSupplier Device PackageSeriesTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
SSM3J358R,LF
1+
$0.5070
5+
$0.4789
10+
$0.4507
Quantity
48,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
150°C (TJ)
20 V
SOT-23-3 Flat Leads
-
SOT-23F
U-MOSVII
MOSFET (Metal Oxide)
-
6A (Ta)
1V @ 1mA
1.8V, 8V
22.1mOhm @ 6A, 8V
38.5 nC @ 8 V
±10V
1331 pF @ 10 V
1W (Ta)
-
SSM6J511NU,LF
1+
$0.2535
5+
$0.2394
10+
$0.2254
Quantity
2,917 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
-55°C ~ 150°C (TJ)
12 V
6-WDFN Exposed Pad
-
6-UDFNB (2x2)
U-MOSVII
MOSFET (Metal Oxide)
-
14A (Ta)
1V @ 1mA
-
9.1mOhm @ 4A, 8V
47 nC @ 4.5 V
-
3350 pF @ 6 V
-
-
SSM3J35AFS,LF
1+
$0.3803
5+
$0.3592
10+
$0.3380
Quantity
90 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
150°C
20 V
SC-75, SOT-416
-
SSM
U-MOSVII
MOSFET (Metal Oxide)
-
250mA (Ta)
1V @ 100µA
1.2V, 4.5V
1.4Ohm @ 150mA, 4.5V
-
±10V
42 pF @ 10 V
150mW (Ta)
-
TPC8092,LQ(S
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
30 V
8-SOIC (0.154", 3.90mm Width)
-
8-SOP
U-MOSVII
MOSFET (Metal Oxide)
-
15A (Ta)
2.3V @ 200µA
4.5V, 10V
9mOhm @ 7.5A, 10V
25 nC @ 10 V
±20V
1800 pF @ 10 V
1W (Ta)
-
TPCC8093,L1Q
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C
20 V
8-PowerVDFN
-
8-TSON Advance (3.1x3.1)
U-MOSVII
MOSFET (Metal Oxide)
-
21A (Ta)
1.2V @ 500µA
2.5V, 4.5V
5.8mOhm @ 10.5A, 4.5V
16 nC @ 5 V
±12V
1860 pF @ 10 V
1.9W (Ta), 30W (Tc)
-
SSM6J512NU,LF
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
150°C (TJ)
12 V
6-WDFN Exposed Pad
-
6-UDFNB (2x2)
U-MOSVII
MOSFET (Metal Oxide)
-
10A (Ta)
1V @ 1mA
1.8V, 8V
16.2mOhm @ 4A, 8V
19.5 nC @ 4.5 V
±10V
1400 pF @ 6 V
1.25W (Ta)
-
SSM3J65CTC,L3F
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
150°C
20 V
SC-101, SOT-883
-
CST3C
U-MOSVII
MOSFET (Metal Oxide)
-
700mA (Ta)
1V @ 1mA
1.2V, 4.5V
500mOhm @ 500mA, 4.5V
-
±10V
48 pF @ 10 V
500mW (Ta)
-
SSM3J338R,LF
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
150°C (TJ)
12 V
SOT-23-3 Flat Leads
-
SOT-23F
U-MOSVII
MOSFET (Metal Oxide)
-
6A (Ta)
1V @ 1mA
1.8V, 8V
17.6mOhm @ 6A, 8V
19.5 nC @ 4.5 V
±10V
1400 pF @ 6 V
1W (Ta)
-
SSM3J35AMFV,L3F
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
150°C
20 V
SOT-723
-
VESM
U-MOSVII
MOSFET (Metal Oxide)
-
250mA (Ta)
1V @ 100µA
1.2V, 4.5V
1.4Ohm @ 150mA, 4.5V
-
±10V
42 pF @ 10 V
150mW (Ta)
-
SSM3J355R,LF
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
150°C (TJ)
20 V
SOT-23-3 Flat Leads
-
SOT-23F
U-MOSVII
MOSFET (Metal Oxide)
-
6A (Ta)
1V @ 1mA
1.8V, 4.5V
30.1mOhm @ 4A, 4.5V
16.6 nC @ 4.5 V
±10V
1030 pF @ 10 V
1W (Ta)
-
SSM3J64CTC,L3F
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
150°C
12 V
SC-101, SOT-883
-
CST3C
U-MOSVII
MOSFET (Metal Oxide)
-
1A (Ta)
1V @ 1mA
1.2V, 4.5V
370mOhm @ 600mA, 4.5V
-
±10V
50 pF @ 10 V
500mW (Ta)
-
SSM6K504NU,LF
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
30 V
6-WDFN Exposed Pad
-
6-UDFNB (2x2)
U-MOSVII
MOSFET (Metal Oxide)
-
9A (Ta)
2.5V @ 100µA
4.5V, 10V
19.5mOhm @ 4A, 10V
4.8 nC @ 4.5 V
±20V
620 pF @ 15 V
1.25W (Ta)
-
SSM3J35CTC,L3F
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
150°C (TJ)
20 V
SC-101, SOT-883
-
CST3C
U-MOSVII
MOSFET (Metal Oxide)
-
250mA (Ta)
1V @ 100µA
1.2V, 4.5V
1.4Ohm @ 150mA, 4.5V
-
±10V
42 pF @ 10 V
500mW (Ta)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.