CoolMOS™ PFD7 Series, Single FETs, MOSFETs

Results:
13
Manufacturer
Series
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Operating Temperature
FET Feature
FET Type
Grade
Mounting Type
Drain to Source Voltage (Vdss)
Qualification
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Results remaining13
Applied Filters:
CoolMOS™ PFD7
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseGradeSupplier Device PackageTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
IPD60R1K0PFD7SAUMA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3
MOSFET (Metal Oxide)
-
4.7A (Tc)
4.5V @ 50µA
CoolMOS™ PFD7
600 V
10V
1Ohm @ 1A, 10V
6 nC @ 10 V
±20V
230 pF @ 400 V
26W (Tc)
-
IPN60R600PFD7SATMA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
TO-261-4, TO-261AA
-
PG-SOT223-4
MOSFET (Metal Oxide)
-
6A (Tc)
4.5V @ 80µA
CoolMOS™ PFD7
600 V
10V
600mOhm @ 1.7A, 10V
8.5 nC @ 10 V
±20V
344 pF @ 400 V
7W (Tc)
-
IPLK60R1K5PFD7ATMA1
MOSFET N-CH 600V 3.8A THIN-PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerTDFN
-
PG-TDSON-8-52
MOSFET (Metal Oxide)
-
3.8A (Tc)
4.5V @ 40µA
CoolMOS™ PFD7
600 V
10V
1.5Ohm @ 700mA, 10V
4.6 nC @ 10 V
±20V
169 pF @ 400 V
25W (Tc)
-
IPD60R2K0PFD7SAUMA1
MOSFET N-CH 600V 3A TO252-3
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3-344
MOSFET (Metal Oxide)
-
3A (Tc)
4.5V @ 30µA
CoolMOS™ PFD7
600 V
10V
2Ohm @ 500mA, 10V
3.8 nC @ 10 V
±20V
134 pF @ 400 V
20W (Tc)
-
IPN60R1K0PFD7SATMA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
TO-261-4, TO-261AA
-
PG-SOT223-4
MOSFET (Metal Oxide)
-
4.7A (Tc)
4.5V @ 50µA
CoolMOS™ PFD7
600 V
10V
1Ohm @ 1A, 10V
6 nC @ 10 V
±20V
230 pF @ 400 V
6W (Tc)
-
IPD60R360PFD7SAUMA1
MOSFET N-CH 600V 10A TO252-3
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3-344
MOSFET (Metal Oxide)
-
10A (Tc)
4.5V @ 140µA
CoolMOS™ PFD7
600 V
10V
360mOhm @ 2.9A, 10V
12.7 nC @ 10 V
±20V
534 pF @ 400 V
43W (Tc)
-
IPLK60R600PFD7ATMA1
MOSFET N-CH 600V 7A THIN-PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerTDFN
-
PG-TDSON-8-52
MOSFET (Metal Oxide)
-
7A (Tc)
4.5V @ 80µA
CoolMOS™ PFD7
600 V
10V
600mOhm @ 1.7A, 10V
8.5 nC @ 10 V
±20V
344 pF @ 400 V
45W (Tc)
-
IPLK60R360PFD7ATMA1
MOSFET N-CH 600V 13A THIN-PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerTDFN
-
PG-TDSON-8-52
MOSFET (Metal Oxide)
-
13A (Tc)
4.5V @ 140µA
CoolMOS™ PFD7
600 V
10V
360mOhm @ 2.9A, 10V
12.7 nC @ 10 V
±20V
534 pF @ 400 V
74W (Tc)
-
IPD60R210PFD7SAUMA1
MOSFET N-CH 600V 16A TO252-3
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3-344
MOSFET (Metal Oxide)
-
16A (Tc)
4.5V @ 240µA
CoolMOS™ PFD7
600 V
10V
210mOhm @ 4.9A, 10V
23 nC @ 10 V
±20V
1015 pF @ 400 V
64W (Tc)
-
IPD60R1K5PFD7SAUMA1
MOSFET N-CH 600V 3.6A TO252
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3-344
MOSFET (Metal Oxide)
-
3.6A (Tc)
4.5V @ 40µA
CoolMOS™ PFD7
600 V
10V
1.5Ohm @ 700mA, 10V
4.6 nC @ 10 V
±20V
169 pF @ 400 V
22W (Tc)
-
IPD60R600PFD7SAUMA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3
MOSFET (Metal Oxide)
-
6A (Tc)
4.5V @ 80µA
CoolMOS™ PFD7
600 V
10V
600mOhm @ 1.7A, 10V
8.5 nC @ 10 V
±20V
344 pF @ 400 V
31W (Tc)
-
IPLK60R1K0PFD7ATMA1
MOSFET N-CH 600V 5.2A THIN-PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
8-PowerTDFN
-
PG-TDSON-8-52
MOSFET (Metal Oxide)
-
5.2A (Tc)
4.5V @ 50µA
CoolMOS™ PFD7
600 V
10V
1Ohm @ 1A, 10V
6 nC @ 10 V
±20V
230 pF @ 400 V
31.3W (Tc)
-
IPD60R280PFD7SAUMA1
MOSFET N-CH 600V 12A TO252-3
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
PG-TO252-3-344
MOSFET (Metal Oxide)
-
12A (Tc)
4.5V @ 180µA
CoolMOS™ PFD7
600 V
10V
280mOhm @ 3.6A, 10V
15.3 nC @ 10 V
±20V
656 pF @ 400 V
51W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.