SupreMOS™ Series, Single FETs, MOSFETs

Results:
33
Manufacturer
Series
Power Dissipation (Max)
Input Capacitance (Ciss) (Max) @ Vds
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
Package / Case
Mounting Type
Vgs(th) (Max) @ Id
Vgs (Max)
Operating Temperature
FET Feature
FET Type
Grade
Drain to Source Voltage (Vdss)
Qualification
Technology
Drive Voltage (Max Rds On, Min Rds On)
Results remaining33
Applied Filters:
SupreMOS™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseSupplier Device PackageGradeTechnologyFET FeatureVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
FCPF22N60NT
MOSFET N-CH 600V 22A TO220F
1+
$0.6085
5+
$0.5746
10+
$0.5408
Quantity
27,974 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
-
MOSFET (Metal Oxide)
-
4V @ 250µA
SupreMOS™
600 V
22A (Tc)
10V
165mOhm @ 11A, 10V
45 nC @ 10 V
±45V
1950 pF @ 100 V
39W (Tc)
-
FCPF16N60NT
MOSFET N-CH 600V 16A TO220F
1+
$1.1408
5+
$1.0775
10+
$1.0141
Quantity
6,659 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
-
MOSFET (Metal Oxide)
-
4V @ 250µA
SupreMOS™
600 V
16A (Tc)
10V
199mOhm @ 8A, 10V
52.3 nC @ 10 V
±30V
2170 pF @ 100 V
35.7W (Tc)
-
FCD9N60NTM
MOSFET N-CH 600V 9A DPAK
1+
$0.2535
5+
$0.2394
10+
$0.2254
Quantity
6,180 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
-
MOSFET (Metal Oxide)
-
5V @ 250µA
SupreMOS™
600 V
9A (Tc)
10V
385mOhm @ 4.5A, 10V
17.8 nC @ 10 V
±30V
1000 pF @ 100 V
92.6W (Tc)
-
FCH47N60N
POWER FIELD-EFFECT TRANSISTOR, 4
1+
$13.9437
5+
$13.1690
10+
$12.3944
Quantity
5,220 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247
-
MOSFET (Metal Oxide)
-
4V @ 250µA
SupreMOS™
600 V
47A (Tc)
10V
62mOhm @ 23.5A, 10V
151 nC @ 10 V
±30V
6700 pF @ 100 V
368W (Tc)
-
FCP11N60N
POWER FIELD-EFFECT TRANSISTOR, 1
1+
$1.2676
5+
$1.1972
10+
$1.1268
Quantity
3,546 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220-3
-
MOSFET (Metal Oxide)
-
4V @ 250µA
SupreMOS™
600 V
10.8A (Tc)
10V
299mOhm @ 5.4A, 10V
35.6 nC @ 10 V
±30V
1505 pF @ 100 V
94W (Tc)
-
FCB36N60NTM
POWER MOSFET, N-CHANNEL, SUPREMO
1+
$7.3521
5+
$6.9437
10+
$6.5352
Quantity
600 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
-
MOSFET (Metal Oxide)
-
4V @ 250µA
SupreMOS™
600 V
36A (Tc)
10V
90mOhm @ 18A, 10V
112 nC @ 10 V
±30V
4785 pF @ 100 V
312W (Tc)
-
FCP36N60N
POWER MOSFET, N-CHANNEL, SUPREMO
1+
$4.5634
5+
$4.3099
10+
$4.0563
Quantity
265 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220-3
-
MOSFET (Metal Oxide)
-
4V @ 250µA
SupreMOS™
600 V
36A (Tc)
10V
90mOhm @ 18A, 10V
112 nC @ 10 V
±30V
4785 pF @ 100 V
312W (Tc)
-
FCI25N60N-F102
MOSFET N-CH 600V 25A I2PAK
1+
$7.0986
5+
$6.7042
10+
$6.3099
Quantity
98 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-262-3 Long Leads, I²Pak, TO-262AA
TO-262 (I2PAK)
-
MOSFET (Metal Oxide)
-
4V @ 250µA
SupreMOS™
600 V
25A (Tc)
10V
125mOhm @ 12.5A, 10V
74 nC @ 10 V
±30V
3352 pF @ 100 V
216W (Tc)
-
FCH22N60N
MOSFET N-CH 600V 22A TO247-3
1+
$7.6056
5+
$7.1831
10+
$6.7606
Quantity
70 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
-
MOSFET (Metal Oxide)
-
4V @ 250µA
SupreMOS™
600 V
22A (Tc)
10V
165mOhm @ 11A, 10V
45 nC @ 10 V
±30V
1950 pF @ 100 V
205W (Tc)
-
FCH47N60NF
MOSFET N-CH 600V 45.8A TO247-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
-
MOSFET (Metal Oxide)
-
4V @ 250µA
SupreMOS™
600 V
45.8A (Tc)
10V
65mOhm @ 23.5A, 10V
157 nC @ 10 V
±30V
6120 pF @ 100 V
368W (Tc)
-
FCA22N60N
MOSFET N-CH 600V 22A TO3PN
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-3P-3, SC-65-3
TO-3PN
-
MOSFET (Metal Oxide)
-
4V @ 250µA
SupreMOS™
600 V
22A (Tc)
10V
165mOhm @ 11A, 10V
45 nC @ 10 V
±30V
1950 pF @ 100 V
205W (Tc)
-
FCP22N60N
MOSFET N-CH 600V 22A TO220-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220-3
-
MOSFET (Metal Oxide)
-
4V @ 250µA
SupreMOS™
600 V
22A (Tc)
10V
165mOhm @ 11A, 10V
45 nC @ 10 V
±45V
1950 pF @ 100 V
205W (Tc)
-
FCH76N60NF
POWER FIELD-EFFECT TRANSISTOR, 7
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247
-
MOSFET (Metal Oxide)
-
5V @ 250µA
SupreMOS™
600 V
72.8A (Tc)
10V
38mOhm @ 38A, 10V
300 nC @ 10 V
±30V
11045 pF @ 100 V
543W (Tc)
-
FCH76N60N
MOSFET N-CH 600V 76A TO247-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
-
MOSFET (Metal Oxide)
-
4V @ 250µA
SupreMOS™
600 V
76A (Tc)
10V
36mOhm @ 38A, 10V
285 nC @ 10 V
±30V
12385 pF @ 100 V
543W (Tc)
-
FCP16N60N
MOSFET N-CH 600V 16A TO220-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220-3
-
MOSFET (Metal Oxide)
-
4V @ 250µA
SupreMOS™
600 V
16A (Tc)
10V
199mOhm @ 8A, 10V
52.3 nC @ 10 V
±30V
2170 pF @ 100 V
134.4W (Tc)
-
FCP25N60N-F102
MOSFET N-CH 600V 25A TO220-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220-3
-
MOSFET (Metal Oxide)
-
4V @ 250µA
SupreMOS™
600 V
25A (Tc)
10V
125mOhm @ 12.5A, 10V
74 nC @ 10 V
±30V
3352 pF @ 100 V
216W (Tc)
-
FCPF9N60NTYDTU
MOSFET N-CH 600V 9A TO220F-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack, Formed Leads
TO-220F-3 (Y-Forming)
-
MOSFET (Metal Oxide)
-
4V @ 250µA
SupreMOS™
600 V
9A (Tc)
10V
385mOhm @ 4.5A, 10V
29 nC @ 10 V
±30V
1240 pF @ 100 V
29.8W (Tc)
-
FCPF36N60NT
MOSFET N-CH 600V 36A TO220F
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
-
MOSFET (Metal Oxide)
-
4V @ 250µA
SupreMOS™
600 V
36A (Tc)
10V
90mOhm @ 18A, 10V
112 nC @ 10 V
±30V
4785 pF @ 100 V
-
-
FCP25N60N
MOSFET N-CH 600V 25A TO220-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220-3
-
MOSFET (Metal Oxide)
-
4V @ 250µA
SupreMOS™
600 V
25A (Tc)
10V
125mOhm @ 12.5A, 10V
74 nC @ 10 V
±30V
3352 pF @ 100 V
216W (Tc)
-
FCI25N60N
MOSFET N-CH 600V 25A I2PAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-262-3 Long Leads, I²Pak, TO-262AA
TO-262 (I2PAK)
-
MOSFET (Metal Oxide)
-
4V @ 250µA
SupreMOS™
600 V
25A (Tc)
10V
125mOhm @ 12.5A, 10V
74 nC @ 10 V
±30V
3352 pF @ 100 V
216W (Tc)
-

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.