Military, MIL-PRF-19500/542 Series, Single FETs, MOSFETs

Results:
4
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Operating Temperature
FET Feature
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Supplier Device Package
Vgs(th) (Max) @ Id
Power Dissipation (Max)
Package / Case
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Results remaining4
Applied Filters:
Military, MIL-PRF-19500/542
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseSupplier Device PackageTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Power Dissipation (Max)Input Capacitance (Ciss) (Max) @ Vds
JAN2N6758
MOSFET N-CH 200V 9A TO204AA
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-204AA, TO-3
TO-204AA (TO-3)
MOSFET (Metal Oxide)
-
9A (Tc)
4V @ 250µA
Military, MIL-PRF-19500/542
200 V
10V
490mOhm @ 9A, 10V
39 nC @ 10 V
±20V
4W (Ta), 75W (Tc)
-
JAN2N6760
MOSFET N-CH 400V 5.5A TO204AA
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-204AA, TO-3
TO-204AA (TO-3)
MOSFET (Metal Oxide)
-
5.5A (Tc)
4V @ 250µA
Military, MIL-PRF-19500/542
400 V
10V
1.22Ohm @ 5.5A, 10V
39 nC @ 10 V
±20V
4W (Ta), 75W (Tc)
-
JANTXV2N6758
MOSFET N-CH 200V 9A TO204AA
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-204AA, TO-3
TO-204AA (TO-3)
MOSFET (Metal Oxide)
-
9A (Tc)
4V @ 250µA
Military, MIL-PRF-19500/542
200 V
10V
490mOhm @ 9A, 10V
39 nC @ 10 V
±20V
4W (Ta), 75W (Tc)
-
JAN2N6762
MOSFET N-CH 500V 4.5A TO204AA
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-204AA, TO-3
TO-204AA (TO-3)
MOSFET (Metal Oxide)
-
4.5A (Tc)
4V @ 250µA
Military, MIL-PRF-19500/542
500 V
10V
1.8Ohm @ 4.5A, 10V
40 nC @ 10 V
±20V
4W (Ta), 75W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.