Experience and Expertise

Origin Data full name: Origin Data Global Limited.

Origin Data is a leading independent distributor of electronic components. Our primary focus is assisting customers in sourcing obsolete, end-of-life, hard-to-find and commonly used parts. Drawing on our extensive network and industry expertise, we provide timely, reliable quotes for hard-to-source electronic components and peripherals, ensuring fast delivery that our customers can rely on.

At Origin Data, our stores display millions of parts to meet the diverse needs of our loyal global OEM customer base. Our commitment to excellent customer service and market flexibility has earned us an excellent reputation in the industry.

One of our core strengths lies in our strict quality assurance (QA) system and professional quality control (QC) team. We work together to ensure that our products and services meet the highest quality standards. To further validate our commitment to quality, we are proud to be members of ERAI and hold certifications such as ESD, AS9120B, ISO9001, ISO14001 and more.

What sets us apart is our experienced staff who have deep industry knowledge and years of experience in the field. This allows us to work closely with our customers to understand their unique needs and provide tailor-made solutions.

At Origin Data, we strive to exceed our customers' expectations, provide exceptional service, and meet all of your electronic component needs.

Massive Stock Inventory

Fast Delivery

365 Days Warranty

Purchase Securely

24/7 Support

Resources

Our diverse network allows us to supply electronic components for a variety of industries, including automotive, consumer products, contract manufacturers, electronic manufacturing services (EMS), energy systems and controls, industrial automation, measurement technology, medical devices, telecommunications and welding.

MDmesh™ M2-EP Series, 单 FET，MOSFET

Results:

Select	Image	Product Detail	Price	Availability	ECAD Model	Mounting Type	FET Type	Operating Temperature	Package / Case	Supplier Device Package	Grade	Technology	FET Feature	Current - Continuous Drain (Id) @ 25°C	Series	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Qualification

STB42N60M2-EP

STMicroelectronics

MOSFET N-CH 600V 34A D2PAK

$7.6056

$7.1831

10+

$6.7606

More Price

30,355 Available

Can ship immediately

Ships from: HK

PCB Symbol, Footprint & 3D Model

Surface Mount

N-Channel

150°C (TJ)

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

TO-263 (D2Pak)

MOSFET (Metal Oxide)

34A (Tc)

MDmesh™ M2-EP

600 V

10V

87mOhm @ 17A, 10V

4.75V @ 250µA

55 nC @ 10 V

±25V

2370 pF @ 100 V

250W (Tc)

STP25N60M2-EP

STMicroelectronics

MOSFET N-CH 600V 18A TO220

$9.6338

$9.0986

10+

$8.5634

More Price

193 Available

Can ship immediately

Ships from: HK

PCB Symbol, Footprint & 3D Model

Through Hole

N-Channel

-55°C ~ 150°C (TJ)

TO-220-3

TO-220

MOSFET (Metal Oxide)

18A (Tc)

MDmesh™ M2-EP

600 V

10V

188mOhm @ 9A, 10V

4.75V @ 250µA

29 nC @ 10 V

±25V

1090 pF @ 100 V

150W (Tc)

STD15N60M2-EP

STMicroelectronics

MOSFET N-CH 600V 11A DPAK

$6.3380

$5.9859

10+

$5.6338

More Price

87 Available

Can ship immediately

Ships from: HK

PCB Symbol, Footprint & 3D Model

Surface Mount

N-Channel

-55°C ~ 150°C (TJ)

TO-252-3, DPak (2 Leads + Tab), SC-63

DPAK

MOSFET (Metal Oxide)

11A (Tc)

MDmesh™ M2-EP

600 V

10V

378mOhm @ 5.5A, 10V

4V @ 250µA

17 nC @ 10 V

±25V

590 pF @ 100 V

110W (Tc)

STW27N60M2-EP

STMicroelectronics

MOSFET N-CH 600V 20A TO247-3

PCB Symbol, Footprint & 3D Model

Through Hole

N-Channel

-55°C ~ 150°C (TJ)

TO-247-3

MOSFET (Metal Oxide)

20A (Tc)

MDmesh™ M2-EP

600 V

10V

163mOhm @ 10A, 10V

4.75V @ 250µA

33 nC @ 10 V

±25V

1320 pF @ 100 V

170W (Tc)

STF42N60M2-EP

STMicroelectronics

MOSFET N-CH 600V 34A TO220FP

PCB Symbol, Footprint & 3D Model

Through Hole

N-Channel

150°C (TJ)

TO-220-3 Full Pack

TO-220FP

MOSFET (Metal Oxide)

34A (Tc)

MDmesh™ M2-EP

600 V

10V

87mOhm @ 17A, 10V

4.75V @ 250µA

55 nC @ 10 V

±25V

2370 pF @ 100 V

40W (Tc)

STL25N60M2-EP

STMicroelectronics

MOSFET N-CH 600V 16A PWRFLAT HV

PCB Symbol, Footprint & 3D Model

Surface Mount

N-Channel

-55°C ~ 150°C (TJ)

8-PowerVDFN

PowerFlat™ (8x8) HV

MOSFET (Metal Oxide)

16A (Tc)

MDmesh™ M2-EP

600 V

10V

205mOhm @ 8A, 10V

4.75V @ 250µA

29 nC @ 10 V

±25V

1090 pF @ 100 V

125W (Tc)

STF15N60M2-EP

STMicroelectronics

MOSFET N-CH 600V 11A TO220FP

PCB Symbol, Footprint & 3D Model

Through Hole

N-Channel

-55°C ~ 150°C (TJ)

TO-220-3 Full Pack

TO-220FP

MOSFET (Metal Oxide)

11A (Tc)

MDmesh™ M2-EP

600 V

10V

378mOhm @ 5.5A, 10V

4V @ 250µA

17 nC @ 10 V

±25V

590 pF @ 100 V

25W (Tc)

STP42N60M2-EP

STMicroelectronics

MOSFET N-CH 600V 34A TO220

PCB Symbol, Footprint & 3D Model

Through Hole

N-Channel

150°C (TJ)

TO-220-3

TO-220

MOSFET (Metal Oxide)

34A (Tc)

MDmesh™ M2-EP

600 V

10V

87mOhm @ 17A, 10V

4.75V @ 250µA

55 nC @ 10 V

±25V

2370 pF @ 100 V

250W (Tc)

STP27N60M2-EP

STMicroelectronics

MOSFET N-CH 600V 20A TO220

PCB Symbol, Footprint & 3D Model

Through Hole

N-Channel

-55°C ~ 150°C (TJ)

TO-220-3

TO-220

MOSFET (Metal Oxide)

20A (Tc)

MDmesh™ M2-EP

600 V

10V

163mOhm @ 10A, 10V

4.75V @ 250µA

33 nC @ 10 V

±25V

1320 pF @ 100 V

170W (Tc)

STF20N60M2-EP

STMicroelectronics

MOSFET N-CH 600V 13A TO220FP

PCB Symbol, Footprint & 3D Model

Through Hole

N-Channel

150°C (TJ)

TO-220-3 Full Pack

TO-220FP

MOSFET (Metal Oxide)

13A (Tc)

MDmesh™ M2-EP

600 V

10V

4.75V @ 250µA

22 nC @ 10 V

±25V

STW25N60M2-EP

STMicroelectronics

MOSFET N-CHANNEL 600V 18A TO247

PCB Symbol, Footprint & 3D Model

Through Hole

N-Channel

-55°C ~ 150°C (TJ)

TO-247-3

MOSFET (Metal Oxide)

18A (Tc)

MDmesh™ M2-EP

600 V

10V

188mOhm @ 9A, 10V

4.75V @ 250µA

29 nC @ 10 V

±25V

1090 pF @ 100 V

150W (Tc)

STL11N60M2-EP

STMicroelectronics

MOSFET N-CH 600V POWERFLAT HV

PCB Symbol, Footprint & 3D Model

Surface Mount

N-Channel

150°C (TJ)

8-PowerVDFN

PowerFlat™ (5x6) HV

MOSFET (Metal Oxide)

5.5A (Tc)

MDmesh™ M2-EP

600 V

STL15N60M2-EP

STMicroelectronics

MOSFET N-CH 600V 7A POWERFLAT HV

PCB Symbol, Footprint & 3D Model

Surface Mount

N-Channel

-55°C ~ 150°C (TJ)

8-PowerVDFN

PowerFlat™ (5x6) HV

MOSFET (Metal Oxide)

7A (Tc)

MDmesh™ M2-EP

600 V

10V

418mOhm @ 4.5A, 10V

4.75V @ 250µA

17 nC @ 10 V

±25V

590 pF @ 100 V

55W (Tc)

STP15N60M2-EP

STMicroelectronics

MOSFET N-CH 600V 11A TO220

PCB Symbol, Footprint & 3D Model

Through Hole

N-Channel

-55°C ~ 150°C (TJ)

TO-220-3

TO-220

MOSFET (Metal Oxide)

11A (Tc)

MDmesh™ M2-EP

600 V

10V

378mOhm @ 5.5A, 10V

4V @ 250µA

17 nC @ 10 V

±25V

590 pF @ 100 V

110W (Tc)

STF11N60M2-EP

STMicroelectronics

MOSFET N-CH 600V 7.5A TO220FP

PCB Symbol, Footprint & 3D Model

Through Hole

N-Channel

-55°C ~ 150°C (TJ)

TO-220-3 Full Pack

TO-220FP

MOSFET (Metal Oxide)

7.5A (Tc)

MDmesh™ M2-EP

600 V

10V

595mOhm @ 3.75A, 10V

4.75V @ 250µA

12.4 nC @ 10 V

±25V

390 pF @ 100 V

25W (Tc)

STW35N60M2-EP

STMicroelectronics

MOSFET N-CH 600V TO247

PCB Symbol, Footprint & 3D Model

Through Hole

N-Channel

150°C (TJ)

TO-247-3

TO-247

MOSFET (Metal Oxide)

26A (Tc)

MDmesh™ M2-EP

600 V

STB20N60M2-EP

STMicroelectronics

MOSFET N-CH 600V 13A D2PAK

PCB Symbol, Footprint & 3D Model

Surface Mount

N-Channel

150°C (TJ)

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

TO-263 (D2Pak)

MOSFET (Metal Oxide)

13A (Tc)

MDmesh™ M2-EP

600 V

10V

4.75V @ 250µA

22 nC @ 10 V

STD11N60M2-EP

STMicroelectronics

MOSFET N-CH 600V 7.5A DPAK

PCB Symbol, Footprint & 3D Model

Surface Mount

N-Channel

-55°C ~ 150°C (TJ)

TO-252-3, DPak (2 Leads + Tab), SC-63

DPAK

MOSFET (Metal Oxide)

7.5A (Tc)

MDmesh™ M2-EP

600 V

10V

595mOhm @ 3.75A, 10V

4.75V @ 250µA

12.4 nC @ 10 V

±25V

390 pF @ 100 V

85W (Tc)

STW20N60M2-EP

STMicroelectronics

MOSFET N-CHANNEL 600V 13A TO247

PCB Symbol, Footprint & 3D Model

Through Hole

N-Channel

-55°C ~ 150°C (TJ)

TO-247-3

TO-247

MOSFET (Metal Oxide)

13A (Tc)

MDmesh™ M2-EP

600 V

10V

278mOhm @ 6.5A, 10V

4V @ 250µA

21.7 nC @ 10 V

±25V

787 pF @ 100 V

110W (Tc)

STI20N60M2-EP

STMicroelectronics

MOSFET N-CHANNEL 600V 13A TO220

PCB Symbol, Footprint & 3D Model

Through Hole

N-Channel

-55°C ~ 150°C (TJ)

TO-220-3

TO-220

MOSFET (Metal Oxide)

13A (Tc)

MDmesh™ M2-EP

600 V

10V

278mOhm @ 6.5A, 10V

4.75V @ 250µA

21.7 nC @ 10 V

±25V

787 pF @ 100 V

110W (Tc)

单 FET，MOSFET

离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。

Experience and Expertise

Resources

Products

Tools

Support

Help

Quote Request

BOM Tools

Conversion Calculators

My Favourites

Package Tracking

Order Status

MDmesh™ M2-EP Series, 单 FET，MOSFET

单 FET，MOSFET

Need a quick quote?