HiPerFET™, Q2 Class Series, Single FETs, MOSFETs

Results:
30
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Power Dissipation (Max)
Gate Charge (Qg) (Max) @ Vgs
Supplier Device Package
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Package / Case
Mounting Type
Operating Temperature
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Grade
Qualification
Technology
Results remaining30
Applied Filters:
HiPerFET™, Q2 Class
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseGradeSupplier Device PackageTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
IXFN38N100Q2
MOSFET N-CH 1000V 38A SOT-227
1+
$43.0986
5+
$40.7042
10+
$38.3099
Quantity
4,008 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
SOT-227-4, miniBLOC
-
SOT-227B
MOSFET (Metal Oxide)
-
38A (Tc)
HiPerFET™, Q2 Class
1000 V
10V
250mOhm @ 19A, 10V
5V @ 8mA
250 nC @ 10 V
±30V
7200 pF @ 25 V
890W (Tc)
-
IXFB50N80Q2
MOSFET N-CH 800V 50A PLUS264
1+
$65.9155
5+
$62.2535
10+
$58.5915
Quantity
500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-264-3, TO-264AA
-
PLUS264™
MOSFET (Metal Oxide)
-
50A (Tc)
HiPerFET™, Q2 Class
800 V
10V
160mOhm @ 500mA, 10V
5.5V @ 8mA
260 nC @ 10 V
±30V
7200 pF @ 25 V
1135W (Tc)
-
IXFN80N50Q2
MOSFET N-CH 500V 72A SOT227B
1+
$44.3662
5+
$41.9014
10+
$39.4366
Quantity
192 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
SOT-227-4, miniBLOC
-
SOT-227B
MOSFET (Metal Oxide)
-
72A (Tc)
HiPerFET™, Q2 Class
500 V
10V
60mOhm @ 500mA, 10V
4.5V @ 8mA
250 nC @ 10 V
±30V
12800 pF @ 25 V
890W (Tc)
-
IXFH14N100Q2
MOSFET N-CH 1000V 14A TO247AD
1+
$50.7042
5+
$47.8873
10+
$45.0704
Quantity
30 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
TO-247AD (IXFH)
MOSFET (Metal Oxide)
-
14A (Tc)
HiPerFET™, Q2 Class
1000 V
10V
950mOhm @ 7A, 10V
5.5V @ 4mA
83 nC @ 10 V
±30V
2800 pF @ 25 V
500W (Tc)
-
IXFN70N60Q2
MOSFET N-CH 600V 70A SOT-227B
1+
$253.5211
5+
$239.4366
10+
$225.3521
Quantity
28 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
SOT-227-4, miniBLOC
-
SOT-227B
MOSFET (Metal Oxide)
-
70A (Tc)
HiPerFET™, Q2 Class
600 V
10V
80mOhm @ 35A, 10V
5V @ 8mA
265 nC @ 10 V
±30V
7200 pF @ 25 V
890W (Tc)
-
IXFK52N60Q2
MOSFET N-CH 600V 52A TO264AA
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-264-3, TO-264AA
-
TO-264AA (IXFK)
MOSFET (Metal Oxide)
-
52A (Tc)
HiPerFET™, Q2 Class
600 V
10V
115mOhm @ 500mA, 10V
4.5V @ 8mA
198 nC @ 10 V
±30V
6800 pF @ 25 V
735W (Tc)
-
IXFB30N120Q2
MOSFET N-CH 1200V 30A ISOPLUS264
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-
N-Channel
TO-264-3, TO-264AA
-
ISOPLUS264™
MOSFET (Metal Oxide)
-
30A (Tc)
HiPerFET™, Q2 Class
1200 V
-
-
-
-
-
-
-
-
IXFX52N60Q2
MOSFET N-CH 600V 52A PLUS247-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3 Variant
-
PLUS247™-3
MOSFET (Metal Oxide)
-
52A (Tc)
HiPerFET™, Q2 Class
600 V
10V
115mOhm @ 500mA, 10V
4.5V @ 8mA
198 nC @ 10 V
±30V
6800 pF @ 25 V
735W (Tc)
-
IXFX60N55Q2
MOSFET N-CH 550V 60A PLUS247-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3 Variant
-
PLUS247™-3
MOSFET (Metal Oxide)
-
60A (Tc)
HiPerFET™, Q2 Class
550 V
10V
88mOhm @ 30A, 10V
4.5V @ 8mA
200 nC @ 10 V
±30V
6900 pF @ 25 V
735W (Tc)
-
IXFQ24N50Q
MOSFET N-CH 500V 24A TO3P
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-
N-Channel
TO-3P-3, SC-65-3
-
TO-3P
MOSFET (Metal Oxide)
-
24A (Tc)
HiPerFET™, Q2 Class
500 V
-
-
-
-
-
-
-
-
IXFQ23N60Q
MOSFET N-CH 600V 23A TO268
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-
N-Channel
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
-
TO-268AA
MOSFET (Metal Oxide)
-
23A (Tc)
HiPerFET™, Q2 Class
600 V
-
-
-
-
-
-
-
-
IXFQ21N50Q
MOSFET N-CH 500V 21A TO3P
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-
N-Channel
TO-3P-3, SC-65-3
-
TO-3P
MOSFET (Metal Oxide)
-
21A (Tc)
HiPerFET™, Q2 Class
500 V
-
-
-
-
-
-
-
-
IXFL80N50Q2
MOSFET N-CH 500V 55A ISOPLUS264
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-264-3, TO-264AA
-
ISOPLUS264™
MOSFET (Metal Oxide)
-
55A (Tc)
HiPerFET™, Q2 Class
500 V
10V
66mOhm @ 40A, 10V
5V @ 8mA
260 nC @ 10 V
±30V
10500 pF @ 25 V
625W (Tc)
-
IXFK60N55Q2
MOSFET N-CH 550V 60A TO264AA
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-264-3, TO-264AA
-
TO-264AA (IXFK)
MOSFET (Metal Oxide)
-
60A (Tc)
HiPerFET™, Q2 Class
550 V
10V
88mOhm @ 30A, 10V
4.5V @ 8mA
200 nC @ 10 V
±30V
7300 pF @ 25 V
735W (Tc)
-
IXFK38N80Q2
MOSFET N-CH 800V 38A TO264AA
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-264-3, TO-264AA
-
TO-264AA (IXFK)
MOSFET (Metal Oxide)
-
38A (Tc)
HiPerFET™, Q2 Class
800 V
10V
220mOhm @ 19A, 10V
4.5V @ 8mA
190 nC @ 10 V
±30V
8340 pF @ 25 V
735W (Tc)
-
IXFK30N100Q2
MOSFET N-CH 1000V 30A TO264AA
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-264-3, TO-264AA
-
TO-264AA (IXFK)
MOSFET (Metal Oxide)
-
30A (Tc)
HiPerFET™, Q2 Class
1000 V
10V
400mOhm @ 15A, 10V
5V @ 8mA
186 nC @ 10 V
±30V
8200 pF @ 25 V
735W (Tc)
-
IXFN50N80Q2
MOSFET N-CH 800V 50A SOT-227B
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
SOT-227-4, miniBLOC
-
SOT-227B
MOSFET (Metal Oxide)
-
50A (Tc)
HiPerFET™, Q2 Class
800 V
10V
160mOhm @ 500mA, 10V
5.5V @ 8mA
260 nC @ 10 V
±30V
13500 pF @ 25 V
1135W (Tc)
-
IXFL38N100Q2
MOSFET N-CH 1000V 29A ISOPLUS264
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-264-3, TO-264AA
-
ISOPLUS264™
MOSFET (Metal Oxide)
-
29A (Tc)
HiPerFET™, Q2 Class
1000 V
10V
280mOhm @ 19A, 10V
5.5V @ 8mA
250 nC @ 10 V
±30V
13500 pF @ 25 V
380W (Tc)
-
IXFB70N60Q2
MOSFET N-CH 600V 70A PLUS264
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-264-3, TO-264AA
-
PLUS264™
MOSFET (Metal Oxide)
-
70A (Tc)
HiPerFET™, Q2 Class
600 V
10V
88mOhm @ 35A, 10V
5.5V @ 8mA
265 nC @ 10 V
±30V
12000 pF @ 25 V
890W (Tc)
-
IXFB80N50Q2
MOSFET N-CH 500V 80A PLUS264
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-264-3, TO-264AA
-
PLUS264™
MOSFET (Metal Oxide)
-
80A (Tc)
HiPerFET™, Q2 Class
500 V
10V
60mOhm @ 500mA, 10V
5.5V @ 8mA
250 nC @ 10 V
±30V
15000 pF @ 25 V
960W (Tc)
-

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.