POWER MOS IV® Series, Single FETs, MOSFETs

Results:
16
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Drain to Source Voltage (Vdss)
Vgs(th) (Max) @ Id
Mounting Type
Supplier Device Package
Package / Case
Operating Temperature
FET Feature
FET Type
Grade
Qualification
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Results remaining16
Applied Filters:
POWER MOS IV®
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseSupplier Device PackageGradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
APT5020BNFR
MOSFET N-CH 500V 28A TO247AD
1+
$70.9859
5+
$67.0423
10+
$63.0986
Quantity
1,934 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247AD
-
MOSFET (Metal Oxide)
-
28A (Tc)
4V @ 1mA
POWER MOS IV®
500 V
10V
200mOhm @ 14A, 10V
210 nC @ 10 V
±30V
3500 pF @ 25 V
360W (Tc)
-
APT6040BN
MOSFET N-CH 600V 18A TO247AD
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247AD
-
MOSFET (Metal Oxide)
-
18A (Tc)
4V @ 1mA
POWER MOS IV®
600 V
10V
400mOhm @ 9A, 10V
130 nC @ 10 V
±30V
2950 pF @ 25 V
310W (Tc)
-
APT8018JN
MOSFET N-CH 800V 40A ISOTOP
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Quantity
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PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
SOT-227-4, miniBLOC
ISOTOP®
-
MOSFET (Metal Oxide)
-
40A (Tc)
4V @ 5mA
POWER MOS IV®
800 V
10V
180mOhm @ 20A, 10V
700 nC @ 10 V
±30V
14000 pF @ 25 V
690W (Tc)
-
APT1001R1BN
MOSFET N-CH 1000V 10.5A TO247AD
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247AD
-
MOSFET (Metal Oxide)
-
10.5A (Tc)
4V @ 1mA
POWER MOS IV®
1000 V
10V
1.1Ohm @ 5.25A, 10V
130 nC @ 10 V
±30V
2950 pF @ 25 V
310W (Tc)
-
APT1001RBN
MOSFET N-CH 1000V 11A TO247AD
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247AD
-
MOSFET (Metal Oxide)
-
11A (Tc)
4V @ 1mA
POWER MOS IV®
1000 V
10V
1Ohm @ 5.5A, 10V
130 nC @ 10 V
±30V
2950 pF @ 25 V
310W (Tc)
-
APT1002RBNG
MOSFET N-CH 1000V 8A TO247AD
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247AD
-
MOSFET (Metal Oxide)
-
8A (Tc)
4V @ 1mA
POWER MOS IV®
1000 V
10V
1.6Ohm @ 4A, 10V
105 nC @ 10 V
±30V
1800 pF @ 25 V
240W (Tc)
-
APT4065BNG
MOSFET N-CH 400V 11A TO247AD
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247AD
-
MOSFET (Metal Oxide)
-
11A (Tc)
4V @ 1mA
POWER MOS IV®
400 V
10V
650mOhm @ 5.5A, 10V
55 nC @ 10 V
±30V
950 pF @ 25 V
180W (Tc)
-
APT40M42JN
MOSFET N-CH 400V 86A ISOTOP
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
SOT-227-4, miniBLOC
ISOTOP®
-
MOSFET (Metal Oxide)
-
86A (Tc)
4V @ 5mA
POWER MOS IV®
400 V
10V
42mOhm @ 43A, 10V
760 nC @ 10 V
±30V
14000 pF @ 25 V
690W (Tc)
-
APT40M75JN
MOSFET N-CH 400V 56A ISOTOP
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
SOT-227-4, miniBLOC
ISOTOP®
-
MOSFET (Metal Oxide)
-
56A (Tc)
4V @ 2.5mA
POWER MOS IV®
400 V
10V
75mOhm @ 28A, 10V
370 nC @ 10 V
±30V
6800 pF @ 25 V
520W (Tc)
-
APT5012JN
MOSFET N-CH 500V 43A ISOTOP
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
SOT-227-4, miniBLOC
ISOTOP®
-
MOSFET (Metal Oxide)
-
43A (Tc)
4V @ 2.5mA
POWER MOS IV®
500 V
10V
120mOhm @ 21.5A, 10V
370 nC @ 10 V
±30V
6500 pF @ 25 V
520W (Tc)
-
APT5020BN
MOSFET N-CH 500V 28A TO247AD
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247AD
-
MOSFET (Metal Oxide)
-
28A (Tc)
4V @ 1mA
POWER MOS IV®
500 V
10V
200mOhm @ 14A, 10V
210 nC @ 10 V
±30V
3500 pF @ 25 V
360W (Tc)
-
APT5022BNG
MOSFET N-CH 500V 27A TO247AD
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247AD
-
MOSFET (Metal Oxide)
-
27A (Tc)
4V @ 1mA
POWER MOS IV®
500 V
10V
220mOhm @ 13.5A, 10V
210 nC @ 10 V
±30V
3500 pF @ 25 V
360W (Tc)
-
APT6030BN
MOSFET N-CH 600V 23A TO247AD
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247AD
-
MOSFET (Metal Oxide)
-
23A (Tc)
4V @ 1mA
POWER MOS IV®
600 V
10V
300mOhm @ 11.5A, 10V
210 nC @ 10 V
±30V
3500 pF @ 25 V
360W (Tc)
-
APT6040BNG
MOSFET N-CH 600V 18A TO247AD
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247AD
-
MOSFET (Metal Oxide)
-
18A (Tc)
4V @ 1mA
POWER MOS IV®
600 V
10V
400mOhm @ 9A, 10V
130 nC @ 10 V
±30V
2950 pF @ 25 V
310W (Tc)
-
APT8075BN
MOSFET N-CH 800V 13A TO247AD
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247AD
-
MOSFET (Metal Oxide)
-
13A (Tc)
4V @ 1mA
POWER MOS IV®
800 V
10V
750mOhm @ 6.5A, 10V
130 nC @ 10 V
±30V
2950 pF @ 25 V
310W (Tc)
-
APT5025BN
MOSFET N-CH 500V 23A TO247AD
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247AD
-
MOSFET (Metal Oxide)
-
23A (Tc)
4V @ 1mA
POWER MOS IV®
500 V
10V
250mOhm @ 11.5A, 10V
130 nC @ 10 V
±30V
2950 pF @ 25 V
310W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.