UltraFASTmesh™ Series, Single FETs, MOSFETs

Results:
5
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Supplier Device Package
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Current - Continuous Drain (Id) @ 25°C
Operating Temperature
Mounting Type
Vgs (Max)
FET Feature
FET Type
Grade
Qualification
Technology
Drive Voltage (Max Rds On, Min Rds On)
Results remaining5
Applied Filters:
UltraFASTmesh™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseSupplier Device PackageGradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
STD5N52U
MOSFET N-CH 525V 4.4A DPAK
1+
$0.7606
5+
$0.7183
10+
$0.6761
Quantity
1,640 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
-
MOSFET (Metal Oxide)
-
4.4A (Tc)
4.5V @ 50µA
UltraFASTmesh™
525 V
10V
1.5Ohm @ 2.2A, 10V
16.9 nC @ 10 V
±30V
529 pF @ 25 V
70W (Tc)
-
STI5N52U
MOSFET N-CH 525V 4.4A I2PAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-262-3 Long Leads, I²Pak, TO-262AA
I2PAK
-
MOSFET (Metal Oxide)
-
4.4A (Tc)
4.5V @ 50µA
UltraFASTmesh™
525 V
10V
1.5Ohm @ 2.2A, 10V
16.9 nC @ 10 V
±30V
529 pF @ 25 V
70W (Tc)
-
STF5N52U
MOSFET N-CH 525V 4.4A TO220FP
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220FP
-
MOSFET (Metal Oxide)
-
4.4A (Tc)
4.5V @ 50µA
UltraFASTmesh™
525 V
10V
1.5Ohm @ 2.2A, 10V
16.9 nC @ 10 V
±30V
529 pF @ 25 V
25W (Tc)
-
STF16N50U
MOSFET N-CH 500V 15A TO220FP
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220FP
-
MOSFET (Metal Oxide)
-
15A (Tc)
4.5V @ 100µA
UltraFASTmesh™
500 V
10V
520mOhm @ 5A, 10V
40 nC @ 10 V
±30V
1950 pF @ 25 V
30W (Tc)
-
STF16N60M6
MOSFET N-CH 600V TO220-3 FP
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220FP
-
MOSFET (Metal Oxide)
-
12A (Tc)
4.75V @ 250µA
UltraFASTmesh™
600 V
10V
320mOhm @ 6A, 10V
16.7 nC @ 10 V
±25V
575 pF @ 100 V
25W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.