StrongIRFET™ 2 Series, Single FETs, MOSFETs

Results:
35
Manufacturer
Series
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Power Dissipation (Max)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Mounting Type
Operating Temperature
FET Feature
FET Type
Grade
Qualification
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Results remaining35
Applied Filters:
StrongIRFET™ 2
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypeOperating TemperatureGradeTechnologyFET FeatureSeriesDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackagePackage / CaseQualification
IPT012N08NF2SATMA1
1+
$3.0423
5+
$2.8732
10+
$2.7042
Quantity
20,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
StrongIRFET™ 2
80 V
39A (Ta), 351A (Tc)
6V, 10V
1.23mOhm @ 150A, 10V
3.8V @ 267µA
255 nC @ 10 V
±20V
12000 pF @ 40 V
3.8W (Ta), 300W (Tc)
PG-HSOF-8
8-PowerSFN
-
IPD040N08NF2SATMA1
1+
$1.1763
5+
$1.1110
10+
$1.0456
Quantity
4,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
StrongIRFET™ 2
80 V
20A (Ta), 129A (Tc)
6V, 10V
4mOhm @ 70A, 10V
3.8V @ 85µA
81 nC @ 10 V
±20V
3800 pF @ 40 V
3W (Ta), 150W (Tc)
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
-
IPF016N10NF2SATMA1
1+
$7.2321
5+
$6.8303
10+
$6.4286
Quantity
46 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
StrongIRFET™ 2
100 V
274A (Tc)
6V, 10V
1.6mOhm @ 100A, 10V
3.8V @ 267µA
241 nC @ 10 V
±20V
11000 pF @ 50 V
300W (Tc)
PG-TO263-7-14
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
-
IPD130N10NF2SATMA1
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
StrongIRFET™ 2
100 V
11A (Ta), 52A (Tc)
6V, 10V
13mOhm @ 30A, 10V
3.8V @ 30µA
28 nC @ 10 V
±20V
1300 pF @ 50 V
3W (Ta), 71W (Tc)
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
-
IPF014N08NF2SATMA1
TRENCH 40<-<100V PG-TO263-7
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
StrongIRFET™ 2
80 V
282A (Tc)
6V, 10V
1.4mOhm @ 100A, 10V
3.8V @ 267µA
255 nC @ 10 V
±20V
12000 pF @ 40 V
300W (Tc)
PG-TO263-7-14
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
-
IPD052N10NF2SATMA1
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
StrongIRFET™ 2
100 V
17A (Ta), 118A (Tc)
6V, 10V
5.2mOhm @ 70A, 10V
3.8V @ 84µA
76 nC @ 10 V
±20V
3600 pF @ 50 V
3W (Ta), 150W (Tc)
PG-TO252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
-
IPB019N08NF2SATMA1
TRENCH 40<-<100V PG-TO263-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
StrongIRFET™ 2
80 V
166A (Tc)
6V, 10V
1.95mOhm @ 100A, 10V
3.8V @ 194µA
186 nC @ 10 V
±20V
8700 pF @ 40 V
250W (Tc)
PG-TO263-3
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
IPP055N08NF2SAKMA1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
StrongIRFET™ 2
80 V
18.5A (Ta), 99A (Tc)
6V, 10V
5.5mOhm @ 60A, 10V
3.8V @ 55µA
54 nC @ 10 V
±20V
2500 pF @ 40 V
3.8W (Ta), 107W (Tc)
PG-TO220-3
TO-220-3
-
IPA030N10NF2SXKSA1
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
StrongIRFET™ 2
100 V
83A (Tc)
6V, 10V
3mOhm @ 50A, 10V
3.8V @ 169µA
154 nC @ 10 V
±20V
7300 pF @ 50 V
41W (Tc)
PG-TO220 Full Pack
TO-220-3 Full Pack
-
IPF017N08NF2SATMA1
TRENCH 40<-<100V PG-TO263-7
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
StrongIRFET™ 2
80 V
259A (Tc)
6V, 10V
1.7mOhm @ 100A, 10V
3.8V @ 194µA
186 nC @ 10 V
±20V
8700 pF @ 40 V
250W (Tc)
PG-TO263-7-14
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
-
IPP040N08NF2SAKMA1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
StrongIRFET™ 2
80 V
22A (Ta), 115A (Tc)
6V, 10V
4mOhm @ 80A, 10V
3.8V @ 85µA
81 nC @ 10 V
±20V
3800 pF @ 40 V
3.8W (Ta), 150W (Tc)
PG-TO220-3
TO-220-3
-
IPF039N08NF2SATMA1
TRENCH 40<-<100V PG-TO263-7
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
StrongIRFET™ 2
80 V
126A (Tc)
6V, 10V
3.9mOhm @ 80A, 10V
3.8V @ 85µA
81 nC @ 10 V
±20V
3800 pF @ 40 V
150W (Tc)
PG-TO263-7-14
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
-
IPB040N08NF2SATMA1
TRENCH 40<-<100V PG-TO263-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
StrongIRFET™ 2
50 V
107A (Tc)
6V, 10V
4mOhm @ 80A, 10V
3.8V @ 85µA
81 nC @ 10 V
±20V
3800 pF @ 40 V
150W (Tc)
PG-TO263-3
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
IPP026N10NF2SAKMA1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
StrongIRFET™ 2
100 V
27A (Ta), 184A (Tc)
6V, 10V
2.6mOhm @ 100A, 10V
3.8V @ 169µA
154 nC @ 10 V
±20V
7300 pF @ 50 V
3.8W (Ta), 250W (Tc)
PG-TO220-3
TO-220-3
-
IPP024N08NF2SAKMA1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
StrongIRFET™ 2
80 V
28A (Ta), 182A (Tc)
6V, 10V
2.4mOhm @ 100A, 10V
3.8V @ 139µA
133 nC @ 10 V
±20V
6200 pF @ 40 V
3.8W (Ta), 214W (Tc)
PG-TO220-3
TO-220-3
-
IPT022N10NF2SATMA1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
StrongIRFET™ 2
100 V
29A (Ta), 236A (Tc)
6V, 10V
2.25mOhm @ 150A, 10V
3.8V @ 169µA
155 nC @ 10 V
±20V
7300 pF @ 50 V
3.8W (Ta), 250W (Tc)
PG-HSOF-8
8-PowerSFN
-
IPP016N08NF2SAKMA1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
StrongIRFET™ 2
80 V
35A (Ta), 196A (Tc)
6V, 10V
1.6mOhm @ 100A, 10V
3.8V @ 267µA
255 nC @ 10 V
±20V
12000 pF @ 40 V
3.8W (Ta), 300W (Tc)
PG-TO220-3
TO-220-3
-
IPB026N10NF2SATMA1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
StrongIRFET™ 2
100 V
162A (Tc)
6V, 10V
2.65mOhm @ 100A, 10V
3.8V @ 169µA
154 nC @ 10 V
±20V
7300 pF @ 50 V
250W (Tc)
PG-TO263-3
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
IPF024N10NF2SATMA1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
StrongIRFET™ 2
100 V
227A (Tc)
6V, 10V
2.4mOhm @ 100A, 10V
3.8V @ 169µA
154 nC @ 10 V
±20V
7300 pF @ 50 V
250W (Tc)
PG-TO263-7-14
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
-
IPB016N08NF2SATMA1
TRENCH 40<-<100V PG-TO263-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
StrongIRFET™ 2
80 V
170A (Tc)
6V, 10V
1.65mOhm @ 100A, 10V
3.8V @ 267µA
255 nC @ 10 V
±20V
12000 pF @ 40 V
300W (Tc)
PG-TO263-3
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.