Automotive, AEC-Q101, PowerTrench® Series, Single FETs, MOSFETs

Results:
9
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Power Dissipation (Max)
Supplier Device Package
Package / Case
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Operating Temperature
Mounting Type
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Grade
Qualification
Technology
Vgs (Max)
Results remaining9
Applied Filters:
Automotive, AEC-Q101, PowerTrench®
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypePackage / CaseDrain to Source Voltage (Vdss)Operating TemperatureSupplier Device PackageTechnologySeriesFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)
FDB8443-F085
MOSFET N-CH 40V 25A TO263AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
40 V
-55°C ~ 175°C (TJ)
D2PAK (TO-263)
MOSFET (Metal Oxide)
Automotive, AEC-Q101, PowerTrench®
-
25A (Ta)
4V @ 250µA
10V
5.5mOhm @ 80A, 10V
185 nC @ 10 V
±20V
9310 pF @ 25 V
188W (Tc)
FDI8441_F085
MOSFET N-CH 40V 26A/80A I2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-262-3 Long Leads, I²Pak, TO-262AA
40 V
-55°C ~ 175°C (TJ)
I2PAK (TO-262)
MOSFET (Metal Oxide)
Automotive, AEC-Q101, PowerTrench®
-
26A (Ta), 80A (Tc)
4V @ 250µA
10V
4.7mOhm @ 80A, 10V
280 nC @ 10 V
±20V
15000 pF @ 25 V
300W (Tc)
FDS8449-F085P
MOSFET N-CH 40V 7.6A 8SOIC
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-SOIC (0.154", 3.90mm Width)
40 V
-55°C ~ 150°C (TJ)
8-SOIC
MOSFET (Metal Oxide)
Automotive, AEC-Q101, PowerTrench®
-
7.6A (Ta)
3V @ 250µA
4.5V, 10V
29mOhm @ 7.6A, 10V
11 nC @ 5 V
±20V
760 pF @ 20 V
5W (Ta)
FDBL86062-F085AW
MOSFET N-CH 100V 300A 8HPSOF
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerSFN
100 V
-55°C ~ 175°C (TJ)
8-HPSOF
MOSFET (Metal Oxide)
Automotive, AEC-Q101, PowerTrench®
-
300A (Tj)
4.5V @ 250µA
10V
2mOhm @ 80A, 10V
124 nC @ 10 V
±20V
6970 pF @ 50 V
429W (Tj)
FDBL86366-F085AW
MOSFET N-CH 80V 220A 8HPSOF
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerSFN
80 V
-55°C ~ 175°C (TJ)
8-HPSOF
MOSFET (Metal Oxide)
Automotive, AEC-Q101, PowerTrench®
-
220A (Tc)
4V @ 250µA
10V
3mOhm @ 80A, 10V
112 nC @ 10 V
±20V
6320 pF @ 40 V
300W (Tj)
FDBL86063-F085AW
MOSFET N-CH 100V 240A 8HPSOF
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerSFN
100 V
-55°C ~ 175°C (TJ)
8-HPSOF
MOSFET (Metal Oxide)
Automotive, AEC-Q101, PowerTrench®
-
240A (Tj)
4V @ 250µA
10V
2.6mOhm @ 80A, 10V
95 nC @ 10 V
±20V
5120 pF @ 50 V
357W (Tj)
FDBL86361-F085AW
MOSFET N-CH 80V 300A 8HPSOF
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerSFN
80 V
-55°C ~ 175°C (TJ)
8-HPSOF
MOSFET (Metal Oxide)
Automotive, AEC-Q101, PowerTrench®
-
300A (Tc)
4V @ 250µA
10V
1.4mOhm @ 80A, 10V
188 nC @ 10 V
±20V
12800 pF @ 40 V
429W (Tj)
FDBL86363-F085AW
MOSFET N-CH 80V 240A 8HPSOF
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerSFN
80 V
-55°C ~ 175°C (TJ)
8-HPSOF
MOSFET (Metal Oxide)
Automotive, AEC-Q101, PowerTrench®
-
240A (Tc)
4V @ 250µA
10V
2mOhm @ 80A, 10V
169 nC @ 10 V
±20V
10000 pF @ 40 V
357W (Tj)
FDBL86066-F085AW
MOSFET N-CH 100V 185A 8HPSOF
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerSFN
100 V
-55°C ~ 175°C (TJ)
8-HPSOF
MOSFET (Metal Oxide)
Automotive, AEC-Q101, PowerTrench®
-
185A (Tc)
4V @ 250µA
10V
4.1mOhm @ 80A, 10V
69 nC @ 10 V
±20V
3240 pF @ 50 V
300W (Ta)

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.