Linear L2™ Series, Single FETs, MOSFETs

Results:
54
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Supplier Device Package
Power Dissipation (Max)
Package / Case
Drain to Source Voltage (Vdss)
Mounting Type
Vgs(th) (Max) @ Id
Vgs (Max)
Operating Temperature
FET Type
Technology
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
Grade
Qualification
Results remaining54
Applied Filters:
Linear L2™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseSupplier Device PackageGradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
IXTH30N60L2
MOSFET N-CH 600V 30A TO247
1+
$19.0141
5+
$17.9577
10+
$16.9014
Quantity
5,550 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247 (IXTH)
-
MOSFET (Metal Oxide)
-
30A (Tc)
4.5V @ 250µA
Linear L2™
600 V
10V
240mOhm @ 15A, 10V
335 nC @ 10 V
±20V
10700 pF @ 25 V
540W (Tc)
-
IXTQ60N20L2
MOSFET N-CH 200V 60A TO3P
1+
$50.7042
5+
$47.8873
10+
$45.0704
Quantity
1,047 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-3P-3, SC-65-3
TO-3P
-
MOSFET (Metal Oxide)
-
60A (Tc)
4.5V @ 250µA
Linear L2™
200 V
10V
45mOhm @ 30A, 10V
255 nC @ 10 V
±20V
10500 pF @ 25 V
540W (Tc)
-
IXTH110N10L2
MOSFET N-CH 100V 110A TO247
1+
$20.2817
5+
$19.1549
10+
$18.0282
Quantity
998 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-
N-Channel
TO-247-3
TO-247 (IXTH)
-
MOSFET (Metal Oxide)
-
110A (Tc)
4.5V @ 250µA
Linear L2™
100 V
10V
18mOhm @ 500mA, 10V
260 nC @ 10 V
±20V
10500 pF @ 25 V
600W (Tc)
-
IXTN200N10L2
MOSFET N-CH 100V 178A SOT227B
1+
$36.7606
5+
$34.7183
10+
$32.6761
Quantity
900 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
SOT-227-4, miniBLOC
SOT-227B
-
MOSFET (Metal Oxide)
-
178A (Tc)
4.5V @ 3mA
Linear L2™
100 V
10V
11mOhm @ 100A, 10V
540 nC @ 10 V
±20V
23000 pF @ 25 V
830W (Tc)
-
IXTX110N20L2
MOSFET N-CH 200V 110A PLUS247-3
1+
$51.9718
5+
$49.0845
10+
$46.1972
Quantity
790 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3 Variant
PLUS247™-3
-
MOSFET (Metal Oxide)
-
110A (Tc)
4.5V @ 3mA
Linear L2™
200 V
10V
24mOhm @ 55A, 10V
500 nC @ 10 V
±20V
23000 pF @ 25 V
960W (Tc)
-
IXTH30N50L2
MOSFET N-CH 500V 30A TO247
1+
$44.3662
5+
$41.9014
10+
$39.4366
Quantity
290 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247 (IXTH)
-
MOSFET (Metal Oxide)
-
30A (Tc)
4.5V @ 250µA
Linear L2™
500 V
10V
200mOhm @ 15A, 10V
240 nC @ 10 V
±20V
8100 pF @ 25 V
400W (Tc)
-
IXTH60N20L2
MOSFET N-CH 200V 60A TO247
1+
$50.7042
5+
$47.8873
10+
$45.0704
Quantity
180 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247 (IXTH)
-
MOSFET (Metal Oxide)
-
60A (Tc)
4.5V @ 250µA
Linear L2™
200 V
10V
45mOhm @ 30A, 10V
255 nC @ 10 V
±20V
10500 pF @ 25 V
540W (Tc)
-
IXTT110N10L2
MOSFET N-CH 100V 110A TO268
1+
$35.4930
5+
$33.5211
10+
$31.5493
Quantity
140 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
TO-268AA
-
MOSFET (Metal Oxide)
-
110A (Tc)
4.5V @ 250µA
Linear L2™
100 V
10V
18mOhm @ 55A, 10V
260 nC @ 10 V
±20V
10500 pF @ 25 V
600W (Tc)
-
IXTK200N10L2
MOSFET N-CH 100V 200A TO264
1+
$35.4930
5+
$33.5211
10+
$31.5493
Quantity
140 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-264-3, TO-264AA
TO-264 (IXTK)
-
MOSFET (Metal Oxide)
-
200A (Tc)
4.5V @ 3mA
Linear L2™
100 V
10V
11mOhm @ 100A, 10V
540 nC @ 10 V
±20V
23000 pF @ 25 V
1040W (Tc)
-
IXTT140N075L2HV
MOSFET N-CH 75V 140A TO268HV
1+
$76.0563
5+
$71.8310
10+
$67.6056
Quantity
120 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
TO-268HV (IXTT)
-
MOSFET (Metal Oxide)
-
140A (Tc)
4.5V @ 250µA
Linear L2™
75 V
10V
11mOhm @ 70A, 10V
275 nC @ 10 V
±20V
9300 pF @ 25 V
540W (Tc)
-
IXTQ40N50L2
MOSFET N-CH 500V 40A TO3P
1+
$76.0563
5+
$71.8310
10+
$67.6056
Quantity
90 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-3P-3, SC-65-3
TO-3P
-
MOSFET (Metal Oxide)
-
40A (Tc)
4.5V @ 250µA
Linear L2™
500 V
10V
170mOhm @ 20A, 10V
320 nC @ 10 V
±20V
10400 pF @ 25 V
540W (Tc)
-
IXTT40N50L2
MOSFET N-CH 500V 40A TO268
1+
$82.3944
5+
$77.8169
10+
$73.2394
Quantity
84 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
TO-268AA
-
MOSFET (Metal Oxide)
-
40A (Tc)
4.5V @ 250µA
Linear L2™
500 V
10V
170mOhm @ 20A, 10V
320 nC @ 10 V
±20V
10400 pF @ 25 V
540W (Tc)
-
IXTK240N075L2
MOSFET N-CH 75V 240A TO264
1+
$76.0563
5+
$71.8310
10+
$67.6056
Quantity
50 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-264-3, TO-264AA
TO-264
-
MOSFET (Metal Oxide)
-
240A (Tc)
4.5V @ 3mA
Linear L2™
75 V
10V
7mOhm @ 120A, 10V
546 nC @ 10 V
±20V
19000 pF @ 25 V
960W (Tc)
-
IXTX200N10L2
MOSFET N-CH 100V 200A PLUS247-3
Contact us
Quantity
33 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3 Variant
PLUS247™-3
-
MOSFET (Metal Oxide)
-
200A (Tc)
4.5V @ 3mA
Linear L2™
100 V
10V
11mOhm @ 100A, 10V
540 nC @ 10 V
±20V
23000 pF @ 25 V
1040W (Tc)
-
IXTT60N20L2
MOSFET N-CH 200V 60A TO268
1+
$30.4225
5+
$28.7324
10+
$27.0423
Quantity
28 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
TO-268AA
-
MOSFET (Metal Oxide)
-
60A (Tc)
4.5V @ 250µA
Linear L2™
200 V
10V
45mOhm @ 30A, 10V
255 nC @ 10 V
±20V
10500 pF @ 25 V
540W (Tc)
-
IXTK90N25L2
MOSFET N-CH 250V 90A TO264
1+
$10.1408
5+
$9.5775
10+
$9.0141
Quantity
4 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-264-3, TO-264AA
TO-264 (IXTK)
-
MOSFET (Metal Oxide)
-
90A (Tc)
4.5V @ 3mA
Linear L2™
250 V
10V
33mOhm @ 45A, 10V
640 nC @ 10 V
±20V
23000 pF @ 25 V
960W (Tc)
-
IXTX90N25L2
MOSFET N-CH 250V 90A PLUS247-3
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3 Variant
PLUS247™-3
-
MOSFET (Metal Oxide)
-
90A (Tc)
4.5V @ 3mA
Linear L2™
250 V
10V
33mOhm @ 45A, 10V
640 nC @ 10 V
±20V
23000 pF @ 25 V
960W (Tc)
-
IXTT30N50L2
MOSFET N-CH 500V 30A TO268
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
TO-268AA
-
MOSFET (Metal Oxide)
-
30A (Tc)
4.5V @ 250µA
Linear L2™
500 V
10V
200mOhm @ 15A, 10V
240 nC @ 10 V
±20V
8100 pF @ 25 V
400W (Tc)
-
IXTT110N10L2-TRL
MOSFET N-CH 100V 110A TO268
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
TO-268 (IXTT)
-
MOSFET (Metal Oxide)
-
110A (Tc)
4.5V @ 250µA
Linear L2™
100 V
10V
18mOhm @ 55A, 10V
260 nC @ 10 V
±20V
10500 pF @ 25 V
600W (Tc)
-
IXTH75N10L2
MOSFET N-CH 100V 75A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247 (IXTH)
-
MOSFET (Metal Oxide)
-
75A (Tc)
4.5V @ 250µA
Linear L2™
100 V
10V
21mOhm @ 500mA, 10V
215 nC @ 10 V
±20V
8100 pF @ 25 V
400W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.