SIPMOS™ Series, Single FETs, MOSFETs

Results:
12
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Vgs(th) (Max) @ Id
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Operating Temperature
Grade
Mounting Type
Qualification
Technology
Vgs (Max)
Results remaining12
Applied Filters:
SIPMOS™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseFET TypeDrain to Source Voltage (Vdss)GradeSupplier Device PackageTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CSeriesDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
BSS138NH6433XTMA1
MOSFET N-CH 60V 230MA SOT23-3
1+
$0.7099
5+
$0.6704
10+
$0.6310
Quantity
50,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
N-Channel
60 V
-
PG-SOT23
MOSFET (Metal Oxide)
-
230mA (Ta)
SIPMOS™
4.5V, 10V
3.5Ohm @ 230mA, 10V
1.4V @ 26µA
1.4 nC @ 10 V
±20V
41 pF @ 25 V
360mW (Ta)
-
BSS138WH6433XTMA1
MOSFET N-CH 60V 280MA SOT323-3
1+
$0.6338
5+
$0.5986
10+
$0.5634
Quantity
10,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
SC-70, SOT-323
N-Channel
60 V
-
PG-SOT323
MOSFET (Metal Oxide)
-
280mA (Ta)
SIPMOS™
4.5V, 10V
3.5Ohm @ 200mA, 10V
1.4V @ 26µA
1.5 nC @ 10 V
±20V
43 pF @ 25 V
500mW (Ta)
-
BSP320SH6327XTSA1
MOSFET N-CH 60V 2.9A SOT223-4
1+
$0.6490
5+
$0.6130
10+
$0.5769
Quantity
430 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-261-4, TO-261AA
N-Channel
60 V
-
PG-SOT223-4
MOSFET (Metal Oxide)
-
2.9A (Tj)
SIPMOS™
10V
120mOhm @ 2.9A, 10V
4V @ 20µA
12 nC @ 10 V
±20V
340 pF @ 25 V
1.8W (Ta)
-
BSS169H6906XTSA1
MOSFET N-CH 100V 170MA SOT23-3
1+
$0.6592
5+
$0.6225
10+
$0.5859
Quantity
20 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
N-Channel
100 V
-
PG-SOT23
MOSFET (Metal Oxide)
Depletion Mode
170mA (Ta)
SIPMOS™
0V, 10V
6Ohm @ 170mA, 10V
1.8V @ 50µA
2.8 nC @ 7 V
±20V
68 pF @ 10 V
360mW (Ta)
-
BSS192PH6327XTSA1
MOSFET P-CH 250V 190MA SOT89
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-243AA
P-Channel
250 V
-
PG-SOT89
MOSFET (Metal Oxide)
-
190mA (Ta)
SIPMOS™
2.8V, 10V
12Ohm @ 190mA, 10V
2V @ 130µA
6.1 nC @ 10 V
±20V
104 pF @ 25 V
1W (Ta)
-
BSS225H6327XTSA1
MOSFET N-CH 600V 90MA SOT89
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-243AA
N-Channel
600 V
-
PG-SOT89
MOSFET (Metal Oxide)
-
90mA (Ta)
SIPMOS™
4.5V, 10V
45Ohm @ 90mA, 10V
2.3V @ 94µA
5.8 nC @ 10 V
±20V
131 pF @ 25 V
1W (Ta)
-
BSP135H6906XTSA1
MOSFET N-CH 600V 120MA SOT223-4
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-261-4, TO-261AA
N-Channel
600 V
-
PG-SOT223-4
MOSFET (Metal Oxide)
Depletion Mode
120mA (Ta)
SIPMOS™
0V, 10V
45Ohm @ 120mA, 10V
1V @ 94µA
4.9 nC @ 5 V
±20V
146 pF @ 25 V
1.8W (Ta)
-
BSP321PH6327XTSA1
MOSFET P-CH 100V 980MA SOT223-4
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-261-4, TO-261AA
P-Channel
100 V
-
PG-SOT223-4
MOSFET (Metal Oxide)
-
980mA (Tc)
SIPMOS™
10V
900mOhm @ 980mA, 10V
4V @ 380µA
12 nC @ 10 V
±20V
319 pF @ 25 V
1.8W (Ta)
-
BSS87H6327XTSA1
MOSFET N-CH 240V 260MA SOT89-4
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-243AA
N-Channel
240 V
-
PG-SOT89-4-2
MOSFET (Metal Oxide)
-
260mA (Ta)
SIPMOS™
4.5V, 10V
6Ohm @ 260mA, 10V
1.8V @ 108µA
5.5 nC @ 10 V
±20V
97 pF @ 25 V
1W (Ta)
-
BSP125H6433XTMA1
MOSFET N-CH 600V 120MA SOT223-4
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-261-4, TO-261AA
N-Channel
600 V
-
PG-SOT223-4
MOSFET (Metal Oxide)
-
120mA (Ta)
SIPMOS™
4.5V, 10V
-
2.3V @ 94µA
6.6 nC @ 10 V
±20V
150 pF @ 25 V
1.8W (Ta)
-
BSP129H6906XTSA1
MOSFET N-CH 240V 350MA SOT223-4
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-261-4, TO-261AA
N-Channel
240 V
-
PG-SOT223-4
MOSFET (Metal Oxide)
Depletion Mode
350mA (Ta)
SIPMOS™
0V, 10V
6Ohm @ 350mA, 10V
1V @ 108µA
5.7 nC @ 5 V
±20V
108 pF @ 25 V
1.8W (Ta)
-
SN7002NH6433XTMA1
MOSFET N-CH 60V 200MA SOT23-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
N-Channel
60 V
-
PG-SOT23
MOSFET (Metal Oxide)
-
200mA (Ta)
SIPMOS™
4.5V, 10V
5Ohm @ 500mA, 10V
1.8V @ 26µA
1.5 nC @ 10 V
±20V
45 pF @ 25 V
360mW (Ta)
-

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.