U-MOSVI Series, Single FETs, MOSFETs

Results:
113
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Supplier Device Package
Package / Case
Vgs(th) (Max) @ Id
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Drain to Source Voltage (Vdss)
Operating Temperature
FET Type
Grade
Mounting Type
Qualification
FET Feature
Technology
Results remaining113
Applied Filters:
U-MOSVI
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypePackage / CaseFET TypeOperating TemperatureDrain to Source Voltage (Vdss)GradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSupplier Device PackageSeriesDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
SSM6J501NU,LF
1+
$0.1141
5+
$0.1077
10+
$0.1014
Quantity
300,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
6-WDFN Exposed Pad
P-Channel
150°C (TJ)
20 V
-
MOSFET (Metal Oxide)
-
10A (Ta)
1V @ 1mA
6-UDFNB (2x2)
U-MOSVI
1.5V, 4.5V
15.3mOhm @ 4A, 4.5V
29.9 nC @ 4.5 V
±8V
2600 pF @ 10 V
1W (Ta)
-
SSM3J372R,LF
1+
$0.1344
5+
$0.1269
10+
$0.1194
Quantity
289,552 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
SOT-23-3 Flat Leads
P-Channel
150°C
30 V
-
MOSFET (Metal Oxide)
-
6A (Ta)
1.2V @ 1mA
SOT-23F
U-MOSVI
1.8V, 10V
42mOhm @ 5A, 10V
8.2 nC @ 4.5 V
+12V, -6V
560 pF @ 15 V
1W (Ta)
-
SSM3J134TU,LF
1+
$0.3042
5+
$0.2873
10+
$0.2704
Quantity
75,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
3-SMD, Flat Leads
P-Channel
150°C
20 V
-
MOSFET (Metal Oxide)
-
3.2A (Ta)
1V @ 1mA
UFM
U-MOSVI
1.5V, 4.5V
93mOhm @ 1.5A, 4.5V
4.7 nC @ 4.5 V
±8V
290 pF @ 10 V
500mW (Ta)
-
SSM3J327R,LF
1+
$0.3803
5+
$0.3592
10+
$0.3380
Quantity
63,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
SOT-23-3 Flat Leads
P-Channel
150°C (TJ)
20 V
-
MOSFET (Metal Oxide)
-
3.9A (Ta)
1V @ 1mA
SOT-23F
U-MOSVI
1.5V, 4.5V
93mOhm @ 1.5A, 4.5V
4.6 nC @ 4.5 V
±8V
290 pF @ 10 V
1W (Ta)
-
SSM3J325F,LF
1+
$0.1901
5+
$0.1796
10+
$0.1690
Quantity
57,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-236-3, SC-59, SOT-23-3
P-Channel
150°C (TJ)
20 V
-
MOSFET (Metal Oxide)
-
2A (Ta)
-
S-Mini
U-MOSVI
1.5V, 4.5V
150mOhm @ 1A, 4.5V
4.6 nC @ 4.5 V
±8V
270 pF @ 10 V
600mW (Ta)
-
SSM3J328R,LF
1+
$0.0406
5+
$0.0383
10+
$0.0361
Quantity
36,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
SOT-23-3 Flat Leads
P-Channel
150°C (TJ)
20 V
-
MOSFET (Metal Oxide)
-
6A (Ta)
1V @ 1mA
SOT-23F
U-MOSVI
1.5V, 4.5V
29.8mOhm @ 3A, 4.5V
12.8 nC @ 4.5 V
±8V
840 pF @ 10 V
1W (Ta)
-
SSM3J351R,LXHF
1+
$1.2676
5+
$1.1972
10+
$1.1268
Quantity
33,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
SOT-23-3 Flat Leads
P-Channel
150°C
60 V
Automotive
MOSFET (Metal Oxide)
-
3.5A (Ta)
2V @ 1mA
SOT-23F
U-MOSVI
4V, 10V
134mOhm @ 1A, 10V
15.1 nC @ 10 V
+10V, -20V
660 pF @ 10 V
1W (Ta)
AEC-Q101
SSM6J503NU,LF
1+
$0.1394
5+
$0.1317
10+
$0.1239
Quantity
24,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
6-WDFN Exposed Pad
P-Channel
150°C (TJ)
20 V
-
MOSFET (Metal Oxide)
-
6A (Ta)
1V @ 1mA
6-UDFNB (2x2)
U-MOSVI
1.5V, 4.5V
32.4mOhm @ 3A, 4.5V
12.8 nC @ 10 V
±8V
840 pF @ 10 V
1W (Ta)
-
SSM3J332R,LF
1+
$0.0279
5+
$0.0263
10+
$0.0248
Quantity
12,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
SOT-23-3 Flat Leads
P-Channel
150°C (TJ)
30 V
-
MOSFET (Metal Oxide)
-
6A (Ta)
1.2V @ 1mA
SOT-23F
U-MOSVI
1.8V, 10V
42mOhm @ 5A, 10V
8.2 nC @ 4.5 V
±12V
560 pF @ 15 V
1W (Ta)
-
TJ30S06M3L,LXHQ
1+
$1.0648
5+
$1.0056
10+
$0.9465
Quantity
10,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
P-Channel
175°C
60 V
-
MOSFET (Metal Oxide)
-
30A (Ta)
3V @ 1mA
DPAK+
U-MOSVI
6V, 10V
21.8mOhm @ 15A, 10V
80 nC @ 10 V
+10V, -20V
3950 pF @ 10 V
68W (Tc)
-
TJ40S04M3L,LXHQ
1+
$1.0141
5+
$0.9577
10+
$0.9014
Quantity
8,800 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
P-Channel
175°C
40 V
-
MOSFET (Metal Oxide)
-
40A (Ta)
3V @ 1mA
DPAK+
U-MOSVI
6V, 10V
9.1mOhm @ 20A, 10V
83 nC @ 10 V
+10V, -20V
4140 pF @ 10 V
68W (Tc)
-
SSM3J56MFV,L3F
1+
$0.0887
5+
$0.0838
10+
$0.0789
Quantity
8,009 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
SOT-723
P-Channel
150°C (TJ)
20 V
-
MOSFET (Metal Oxide)
-
800mA (Ta)
-
VESM
U-MOSVI
1.2V, 4.5V
390mOhm @ 800mA, 4.5V
-
±8V
100 pF @ 10 V
150mW (Ta)
-
TPC8134,LQ(S
1+
$0.3803
5+
$0.3592
10+
$0.3380
Quantity
4,270 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
8-SOIC (0.154", 3.90mm Width)
P-Channel
150°C (TJ)
40 V
-
MOSFET (Metal Oxide)
-
5A (Ta)
2V @ 100µA
8-SOP
U-MOSVI
4.5V, 10V
52mOhm @ 2.5A, 10V
20 nC @ 10 V
+20V, -25V
890 pF @ 10 V
1W (Ta)
-
SSM3J334R,LF
1+
$0.0634
5+
$0.0599
10+
$0.0563
Quantity
3,150 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
SOT-23-3 Flat Leads
P-Channel
150°C (TJ)
30 V
-
MOSFET (Metal Oxide)
-
4A (Ta)
2V @ 100µA
SOT-23F
U-MOSVI
4V, 10V
71mOhm @ 3A, 10V
5.9 nC @ 10 V
±20V
280 pF @ 15 V
1W (Ta)
-
SSM3J133TU,LF
1+
$0.2028
5+
$0.1915
10+
$0.1803
Quantity
2,158 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
3-SMD, Flat Leads
P-Channel
150°C (TJ)
20 V
-
MOSFET (Metal Oxide)
-
5.5A (Ta)
1V @ 1mA
UFM
U-MOSVI
1.5V, 4.5V
29.8mOhm @ 3A, 4.5V
12.8 nC @ 4.5 V
±8V
840 pF @ 10 V
500mW (Ta)
-
TPC8132,LQ(S
1+
$0.4310
5+
$0.4070
10+
$0.3831
Quantity
2,080 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
8-SOIC (0.154", 3.90mm Width)
P-Channel
150°C (TJ)
40 V
-
MOSFET (Metal Oxide)
-
7A (Ta)
2V @ 200µA
8-SOP
U-MOSVI
4.5V, 10V
25mOhm @ 3.5A, 10V
34 nC @ 10 V
+20V, -25V
1580 pF @ 10 V
1W (Ta)
-
TJ8S06M3L(T6L1,NQ)
1+
$25.3521
5+
$23.9437
10+
$22.5352
Quantity
2,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
P-Channel
175°C (TJ)
60 V
-
MOSFET (Metal Oxide)
-
8A (Ta)
3V @ 1mA
DPAK+
U-MOSVI
6V, 10V
104mOhm @ 4A, 10V
19 nC @ 10 V
+10V, -20V
890 pF @ 10 V
27W (Tc)
-
SSM6J414TU,LF
1+
$0.1268
5+
$0.1197
10+
$0.1127
Quantity
1,375 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
6-SMD, Flat Leads
P-Channel
150°C (TJ)
20 V
-
MOSFET (Metal Oxide)
-
6A (Ta)
1V @ 1mA
UF6
U-MOSVI
1.5V, 4.5V
22.5mOhm @ 6A, 4.5V
23.1 nC @ 4.5 V
±8V
1650 pF @ 10 V
1W (Ta)
-
TPC8125,LQ(S
1+
$1.1408
5+
$1.0775
10+
$1.0141
Quantity
928 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
8-SOIC (0.154", 3.90mm Width)
P-Channel
150°C (TJ)
30 V
-
MOSFET (Metal Oxide)
-
10A (Ta)
2V @ 500µA
8-SOP
U-MOSVI
4.5V, 10V
13mOhm @ 5A, 10V
64 nC @ 10 V
+20V, -25V
2580 pF @ 10 V
1W (Ta)
-
TJ60S04M3L,LXHQ
1+
$30.4225
5+
$28.7324
10+
$27.0423
Quantity
188 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
P-Channel
175°C
40 V
-
MOSFET (Metal Oxide)
-
60A (Ta)
3V @ 1mA
DPAK+
U-MOSVI
6V, 10V
6.3mOhm @ 30A, 10V
125 nC @ 10 V
+10V, -20V
6510 pF @ 10 V
90W (Tc)
-

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.