POWER MOS 7® Series, Single FETs, MOSFETs

Results:
156
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Drain to Source Voltage (Vdss)
Package / Case
Vgs(th) (Max) @ Id
Operating Temperature
Mounting Type
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Grade
Qualification
Technology
Results remaining156
Applied Filters:
POWER MOS 7®
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseDrain to Source Voltage (Vdss)GradeTechnologySeriesSupplier Device PackageFET FeatureVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
APT1204R7SFLLG
MOSFET N-CH 1200V 3.5A D3PAK
1+
$255.8028
5+
$241.5915
10+
$227.3803
Quantity
3,600 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-
N-Channel
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
1200 V
-
MOSFET (Metal Oxide)
POWER MOS 7®
D3PAK
-
5V @ 1mA
3.5A (Tc)
-
4.7Ohm @ 1.75A, 10V
31 nC @ 10 V
-
715 pF @ 25 V
-
-
APT50M65JFLL
MOSFET N-CH 500V 58A ISOTOP
1+
$70.9859
5+
$67.0423
10+
$63.0986
Quantity
96 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
SOT-227-4, miniBLOC
500 V
-
MOSFET (Metal Oxide)
POWER MOS 7®
ISOTOP®
-
5V @ 2.5mA
58A (Tc)
10V
65mOhm @ 29A, 10V
141 nC @ 10 V
±30V
7010 pF @ 25 V
520W (Tc)
-
APT10021JFLL
MOSFET N-CH 1000V 37A ISOTOP
1+
$194.7042
5+
$183.8873
10+
$173.0704
Quantity
64 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
SOT-227-4, miniBLOC
1000 V
-
MOSFET (Metal Oxide)
POWER MOS 7®
ISOTOP®
-
5V @ 5mA
37A (Tc)
10V
210mOhm @ 18.5A, 10V
395 nC @ 10 V
±30V
9750 pF @ 25 V
694W (Tc)
-
APT1201R4SFLLG
MOSFET N-CH 1200V 9A D3PAK
1+
$3.0423
5+
$2.8732
10+
$2.7042
Quantity
21 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-
N-Channel
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
1200 V
-
MOSFET (Metal Oxide)
POWER MOS 7®
D3PAK
-
5V @ 1mA
9A (Tc)
-
1.4Ohm @ 4.5A, 10V
120 nC @ 10 V
-
2500 pF @ 25 V
-
-
APT1204R7KFLLG
MOSFET N-CH 1200V 3.5A TO220
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
1200 V
-
MOSFET (Metal Oxide)
POWER MOS 7®
TO-220 [K]
-
5V @ 1mA
3.5A (Tc)
10V
4.7Ohm @ 1.75A, 10V
31 nC @ 10 V
±30V
715 pF @ 25 V
135W (Tc)
-
APT5010JLL
MOSFET N-CH 500V 41A ISOTOP
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Chassis Mount
-
N-Channel
SOT-227-4, miniBLOC
500 V
-
MOSFET (Metal Oxide)
POWER MOS 7®
ISOTOP®
-
5V @ 2.5mA
41A (Tc)
-
100mOhm @ 20.5A, 10V
95 nC @ 10 V
-
4360 pF @ 25 V
-
-
APT5010JLLU3
MOSFET N-CH 500V 41A SOT227
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
SOT-227-4, miniBLOC
500 V
-
MOSFET (Metal Oxide)
POWER MOS 7®
SOT-227
-
5V @ 2.5mA
41A (Tc)
10V
100mOhm @ 23A, 10V
96 nC @ 10 V
±30V
4360 pF @ 25 V
378W (Tc)
-
APT10026L2FLLG
MOSFET N-CH 1000V 38A 264 MAX
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-
N-Channel
TO-264-3, TO-264AA
1000 V
-
MOSFET (Metal Oxide)
POWER MOS 7®
264 MAX™ [L2]
-
5V @ 5mA
38A (Tc)
-
260mOhm @ 19A, 10V
267 nC @ 10 V
-
7114 pF @ 25 V
-
-
APT50M38JFLL
MOSFET N-CH 500V 88A ISOTOP
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Chassis Mount
-
N-Channel
SOT-227-4, miniBLOC
500 V
-
MOSFET (Metal Oxide)
POWER MOS 7®
ISOTOP®
-
5V @ 5mA
88A (Tc)
-
38mOhm @ 44A, 10V
270 nC @ 10 V
-
12000 pF @ 25 V
-
-
APT12057LFLLG
MOSFET N-CH 1200V 22A TO264
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-264-3, TO-264AA
1200 V
-
MOSFET (Metal Oxide)
POWER MOS 7®
TO-264 [L]
-
5V @ 2.5mA
22A (Tc)
10V
570mOhm @ 11A, 10V
185 nC @ 10 V
±30V
5155 pF @ 25 V
690W (Tc)
-
APT10045LFLLG
MOSFET N-CH 1000V 23A TO264
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-
N-Channel
TO-264-3, TO-264AA
1000 V
-
MOSFET (Metal Oxide)
POWER MOS 7®
TO-264 [L]
-
5V @ 2.5mA
23A (Tc)
-
460mOhm @ 11.5A, 10V
154 nC @ 10 V
-
4350 pF @ 25 V
-
-
APT12067JLL
MOSFET N-CH 1200V 17A SOT227
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
SOT-227-4, miniBLOC
1200 V
-
MOSFET (Metal Oxide)
POWER MOS 7®
SOT-227
-
5V @ 2.5mA
17A (Tc)
10V
570mOhm @ 10A, 10V
290 nC @ 10 V
±30V
6200 pF @ 25 V
460W (Tc)
-
APT12057JLL
MOSFET N-CH 1200V 19A SOT227
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
SOT-227-4, miniBLOC
1200 V
-
MOSFET (Metal Oxide)
POWER MOS 7®
SOT-227
-
5V @ 2.5mA
19A (Tc)
10V
570mOhm @ 10A, 10V
290 nC @ 10 V
±30V
6200 pF @ 25 V
520W (Tc)
-
APT5014SLLG/TR
MOSFET N-CH 500V 35A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
500 V
-
MOSFET (Metal Oxide)
POWER MOS 7®
TO-247
-
5V @ 1mA
35A (Tc)
10V
140mOhm @ 17.5A, 10V
72 nC @ 10 V
±30V
3261 pF @ 25 V
403W (Tc)
-
APT12067B2LLG
MOSFET N-CH 1200V 18A T-MAX
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3 Variant
1200 V
-
MOSFET (Metal Oxide)
POWER MOS 7®
T-MAX™ [B2]
-
5V @ 2.5mA
18A (Tc)
10V
670mOhm @ 9A, 10V
150 nC @ 10 V
±30V
4420 pF @ 25 V
565W (Tc)
-
APT1003RKLLG
MOSFET N-CH 1000V 4A TO220
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
1000 V
-
MOSFET (Metal Oxide)
POWER MOS 7®
TO-220 [K]
-
5V @ 1mA
4A (Tc)
10V
3Ohm @ 2A, 10V
34 nC @ 10 V
±30V
694 pF @ 25 V
139W (Tc)
-
APT55M65JFLL
MOSFET N-CH 550V 63A ISOTOP
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
SOT-227-4, miniBLOC
550 V
-
MOSFET (Metal Oxide)
POWER MOS 7®
ISOTOP®
-
5V @ 5mA
63A (Tc)
10V
65mOhm @ 31.5A, 10V
205 nC @ 10 V
±30V
9165 pF @ 25 V
595W (Tc)
-
APT6017B2LLG
MOSFET N-CH 600V 35A T-MAX
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3 Variant
600 V
-
MOSFET (Metal Oxide)
POWER MOS 7®
T-MAX™ [B2]
-
5V @ 2.5mA
35A (Tc)
10V
170mOhm @ 17.5A, 10V
100 nC @ 10 V
±30V
4500 pF @ 25 V
500W (Tc)
-
APT8014JLL
MOSFET N-CH 800V 42A ISOTOP
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
SOT-227-4, miniBLOC
800 V
-
MOSFET (Metal Oxide)
POWER MOS 7®
ISOTOP®
-
5V @ 5mA
42A (Tc)
10V
140mOhm @ 21A, 10V
285 nC @ 10 V
±30V
7238 pF @ 25 V
595W (Tc)
-
APT5024BLLG
MOSFET N-CH 500V 22A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
500 V
-
MOSFET (Metal Oxide)
POWER MOS 7®
TO-247 [B]
-
5V @ 1mA
22A (Tc)
10V
240mOhm @ 11A, 10V
43 nC @ 10 V
±30V
1900 pF @ 25 V
265W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.