OptiMOS™2 Series, Single FETs, MOSFETs

Results:
6
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
Mounting Type
Vgs (Max)
FET Type
Technology
FET Feature
Grade
Qualification
Results remaining6
Applied Filters:
OptiMOS™2
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypeGradePackage / CaseTechnologyFET FeatureSupplier Device PackageSeriesDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
BSC152N10NSFG
1+
$1.2676
5+
$1.1972
10+
$1.1268
Quantity
13,612 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
8-PowerTDFN
MOSFET (Metal Oxide)
-
PG-TDSON-8
OptiMOS™2
100 V
9.4A (Ta), 63A (Tc)
10V
15.2mOhm @ 25A, 10V
4V @ 72µA
29 nC @ 10 V
±20V
1900 pF @ 50 V
114W (Tc)
-
IPP05CN10NGHKSA1
MOSFET N-CH 100V 100A TO-220
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
-
-
-
-
-
-
-
OptiMOS™2
-
100A (Tc)
-
-
-
-
-
-
-
-
IPP12CN10LGHKSA1
MOSFET N-CH 100V 69A TO220-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
-
-
-
-
-
-
-
OptiMOS™2
-
69A (Tc)
-
-
-
-
-
-
-
-
IPB051NE8NG
N-CHANNEL POWER MOSFET
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
-
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MOSFET (Metal Oxide)
-
PG-TO263-3-2
OptiMOS™2
85 V
100A (Tc)
10V
5.1mOhm @ 100A, 10V
4V @ 250µA
180 nC @ 10 V
±20V
12100 pF @ 40 V
300W (Tc)
-
BSD214SNL6327
SMALL SIGNAL N-CHANNEL MOSFET
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
6-VSSOP, SC-88, SOT-363
MOSFET (Metal Oxide)
-
PG-SOT363-6-6
OptiMOS™2
20 V
1.5A (Ta)
2.5V, 4.5V
140mOhm @ 1.5A, 4.5V
1.2V @ 3.7µA
0.8 nC @ 5 V
±12V
143 pF @ 10 V
500mW (Ta)
-
IPU06N03LZG
N-CHANNEL POWER MOSFET
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
N-Channel
-
TO-251-3 Short Leads, IPak, TO-251AA
MOSFET (Metal Oxide)
-
PG-TO251-3-21
OptiMOS™2
25 V
50A (Tc)
4.5V, 10V
5.1mOhm @ 30A, 10V
2V @ 40µA
22 nC @ 5 V
±20V
2783 pF @ 15 V
83W (Tc)
-

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.