Ultra X2 Series, Single FETs, MOSFETs

Results:
49
Manufacturer
Series
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
Package / Case
Vgs(th) (Max) @ Id
Mounting Type
Drain to Source Voltage (Vdss)
Operating Temperature
FET Type
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
Grade
Qualification
Results remaining49
Applied Filters:
Ultra X2
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseSupplier Device PackageDrain to Source Voltage (Vdss)GradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CSeriesDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
IXTH80N65X2
MOSFET N-CH 650V 80A TO247
1+
$11.4085
5+
$10.7746
10+
$10.1408
Quantity
3,010 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247 (IXTH)
650 V
-
MOSFET (Metal Oxide)
-
80A (Tc)
Ultra X2
10V
40mOhm @ 40A, 10V
4.5V @ 4mA
144 nC @ 10 V
±30V
7753 pF @ 25 V
890W (Tc)
-
IXTY4N65X2
MOSFET N-CH 650V 4A TO252
1+
$1.6479
5+
$1.5563
10+
$1.4648
Quantity
2,100 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
650 V
-
MOSFET (Metal Oxide)
-
4A (Tc)
Ultra X2
10V
850mOhm @ 2A, 10V
5V @ 250µA
8.3 nC @ 10 V
±30V
455 pF @ 25 V
80W (Tc)
-
IXTH48N65X2
MOSFET N-CH 650V 48A TO247
1+
$10.1408
5+
$9.5775
10+
$9.0141
Quantity
1,773 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247 (IXTH)
650 V
-
MOSFET (Metal Oxide)
-
48A (Tc)
Ultra X2
10V
68mOhm @ 24A, 10V
4.5V @ 4mA
77 nC @ 10 V
±30V
4420 pF @ 25 V
660W (Tc)
-
IXTH24N65X2
MOSFET N-CH 650V 24A TO247
1+
$3.5493
5+
$3.3521
10+
$3.1549
Quantity
850 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247 (IXTH)
650 V
-
MOSFET (Metal Oxide)
-
24A (Tc)
Ultra X2
10V
145mOhm @ 12A, 10V
5V @ 250µA
36 nC @ 10 V
±30V
2060 pF @ 25 V
390W (Tc)
-
IXTH12N65X2
MOSFET N-CH 650V 12A TO247-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247 (IXTH)
650 V
-
MOSFET (Metal Oxide)
-
12A (Tc)
Ultra X2
10V
300mOhm @ 6A, 10V
5V @ 250µA
17 nC @ 10 V
±30V
1100 pF @ 25 V
180W (Tc)
-
IXTA30N65X2
IXTA30N65X2
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
-
-
-
-
-
-
-
-
-
Ultra X2
-
-
-
-
-
-
-
-
IXTP4N65X2
MOSFET N-CH 650V 4A TO220
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220
650 V
-
MOSFET (Metal Oxide)
-
4A (Tc)
Ultra X2
10V
850mOhm @ 2A, 10V
5V @ 250µA
8.3 nC @ 10 V
±30V
455 pF @ 25 V
80W (Tc)
-
IXTR102N65X2
MOSFET N-CH 650V 54A ISOPLUS247
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
ISOPLUS247™
650 V
-
MOSFET (Metal Oxide)
-
54A (Tc)
Ultra X2
10V
33mOhm @ 51A, 10V
5V @ 250µA
152 nC @ 10 V
±30V
10900 pF @ 25 V
330W (Tc)
-
IXTP12N65X2M
MOSFET N-CH 650V 12A TO220
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack, Isolated Tab
TO-220 Isolated Tab
650 V
-
MOSFET (Metal Oxide)
-
12A (Tc)
Ultra X2
10V
300mOhm @ 6A, 10V
4.5V @ 250µA
17.7 nC @ 10 V
±30V
1100 pF @ 25 V
40W (Tc)
-
IXTA4N70X2
MOSFET N-CH 700V 4A TO263
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
700 V
-
MOSFET (Metal Oxide)
-
4A (Tc)
Ultra X2
10V
850mOhm @ 2A, 10V
4.5V @ 250µA
11.8 nC @ 10 V
±30V
386 pF @ 25 V
80W (Tc)
-
IXTP8N70X2M
MOSFET N-CH 700V 4A TO220
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack, Isolated Tab
TO-220 Isolated Tab
700 V
-
MOSFET (Metal Oxide)
-
4A (Tc)
Ultra X2
10V
550mOhm @ 500mA, 10V
5V @ 250µA
12 nC @ 10 V
±30V
800 pF @ 10 V
32W (Tc)
-
IXTP12N70X2
MOSFET N-CH 700V 12A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220
700 V
-
MOSFET (Metal Oxide)
-
12A (Tc)
Ultra X2
10V
300mOhm @ 6A, 10V
4.5V @ 250µA
19 nC @ 10 V
±30V
960 pF @ 25 V
180W (Tc)
-
IXTP12N70X2M
MOSFET N-CH 700V 12A TO220
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack, Isolated Tab
TO-220 Isolated Tab
700 V
-
MOSFET (Metal Oxide)
-
12A (Tc)
Ultra X2
10V
300mOhm @ 6A, 10V
4.5V @ 250µA
19 nC @ 10 V
±30V
960 pF @ 25 V
40W (Tc)
-
IXTA12N65X2
MOSFET N-CH 650V 12A TO263AA
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D2PAK (2 Leads + Tab), Variant
TO-263AA
650 V
-
MOSFET (Metal Oxide)
-
12A (Tc)
Ultra X2
10V
300mOhm @ 6A, 10V
5V @ 250µA
17 nC @ 10 V
±30V
1100 pF @ 25 V
180W (Tc)
-
IXTA34N65X2-TRL
MOSFET N-CH 650V 34A TO263
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
650 V
-
MOSFET (Metal Oxide)
-
34A (Tc)
Ultra X2
10V
96mOhm @ 17A, 10V
5V @ 250µA
54 nC @ 10 V
±30V
3000 pF @ 25 V
540W (Tc)
-
IXTY4N65X2-TRL
MOSFET N-CH 650V 4A TO252
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
650 V
-
MOSFET (Metal Oxide)
-
4A (Tc)
Ultra X2
10V
850mOhm @ 2A, 10V
5V @ 250µA
8.3 nC @ 10 V
±30V
455 pF @ 25 V
80W (Tc)
-
IXTY8N65X2
MOSFET N-CH 650V 8A TO252
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
650 V
-
MOSFET (Metal Oxide)
-
8A (Tc)
Ultra X2
10V
500mOhm @ 4A, 10V
5V @ 250µA
12 nC @ 10 V
±30V
800 pF @ 25 V
150W (Tc)
-
IXTP12N65X2
MOSFET N-CH 650V 12A TO220
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220
650 V
-
MOSFET (Metal Oxide)
-
12A (Tc)
Ultra X2
10V
300mOhm @ 6A, 10V
5V @ 250µA
17 nC @ 10 V
±30V
1100 pF @ 25 V
180W (Tc)
-
IXTU4N70X2
MOSFET N-CH 700V 4A TO251
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
150°C (TJ)
N-Channel
TO-251-3 Stub Leads, IPak
TO-251-3
700 V
-
MOSFET (Metal Oxide)
-
4A (Tc)
Ultra X2
10V
850mOhm @ 2A, 10V
4.5V @ 250µA
11.8 nC @ 10 V
±30V
386 pF @ 25 V
80W (Tc)
-
IXTP20N65X2M
MOSFET N-CH 650V 20A TO220
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack, Isolated Tab
TO-220 Isolated Tab
650 V
-
MOSFET (Metal Oxide)
-
20A (Tc)
Ultra X2
10V
185mOhm @ 10A, 10V
4.5V @ 250µA
27 nC @ 10 V
±30V
1450 pF @ 25 V
36W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.