POWER MOS V® Series, Single FETs, MOSFETs

Results:
117
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Drain to Source Voltage (Vdss)
Package / Case
Vgs(th) (Max) @ Id
Mounting Type
Operating Temperature
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Grade
Qualification
Technology
Results remaining117
Applied Filters:
POWER MOS V®
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseGradeSupplier Device PackageTechnologySeriesFET FeatureVgs(th) (Max) @ IdDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
APT20M11JVR
MOSFET N-CH 200V 175A ISOTOP
1+
$83.6620
5+
$79.0141
10+
$74.3662
Quantity
1,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
SOT-227-4, miniBLOC
-
ISOTOP®
MOSFET (Metal Oxide)
POWER MOS V®
-
4V @ 5mA
200 V
175A (Tc)
10V
11mOhm @ 500mA, 10V
180 nC @ 10 V
±30V
21600 pF @ 25 V
700W (Tc)
-
APT10M09LVFRG
MOSFET N-CH 100V 100A TO264
1+
$76.0563
5+
$71.8310
10+
$67.6056
Quantity
109 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-
N-Channel
TO-264-3, TO-264AA
-
TO-264 [L]
MOSFET (Metal Oxide)
POWER MOS V®
-
4V @ 2.5mA
100 V
100A (Tc)
-
9mOhm @ 50A, 10V
350 nC @ 10 V
-
9875 pF @ 25 V
-
-
APT20M22LVFRG
MOSFET N-CH 200V 100A TO264
1+
$55.0141
5+
$51.9577
10+
$48.9014
Quantity
33 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-264-3, TO-264AA
-
TO-264 [L]
MOSFET (Metal Oxide)
POWER MOS V®
-
4V @ 2.5mA
200 V
100A (Tc)
10V
22mOhm @ 500mA, 10V
435 nC @ 10 V
±30V
10200 pF @ 25 V
520W (Tc)
-
APT30M70BVRG
MOSFET N-CH 300V 48A TO247
1+
$32.9577
5+
$31.1268
10+
$29.2958
Quantity
18 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
TO-247 [B]
MOSFET (Metal Oxide)
POWER MOS V®
-
4V @ 1mA
300 V
48A (Tc)
10V
70mOhm @ 500mA, 10V
225 nC @ 10 V
±30V
5870 pF @ 25 V
370W (Tc)
-
APT8015JVFR
MOSFET N-CH 800V 44A ISOTOP
1+
$167.3239
5+
$158.0282
10+
$148.7324
Quantity
4 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Chassis Mount
-
N-Channel
SOT-227-4, miniBLOC
-
ISOTOP®
MOSFET (Metal Oxide)
POWER MOS V®
-
4V @ 5mA
800 V
44A (Tc)
-
150mOhm @ 500mA, 10V
285 nC @ 10 V
-
17650 pF @ 25 V
-
-
APT50M50JVR
MOSFET N-CH 500V 77A ISOTOP
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Chassis Mount
-
N-Channel
SOT-227-4, miniBLOC
-
ISOTOP®
MOSFET (Metal Oxide)
POWER MOS V®
-
4V @ 5mA
500 V
77A (Tc)
-
50mOhm @ 500mA, 10V
1000 nC @ 10 V
-
19600 pF @ 25 V
-
-
APT20M22JVR
MOSFET N-CH 200V 97A ISOTOP
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Chassis Mount
-
N-Channel
SOT-227-4, miniBLOC
-
ISOTOP®
MOSFET (Metal Oxide)
POWER MOS V®
-
4V @ 2.5mA
200 V
97A (Tc)
-
22mOhm @ 500mA, 10V
435 nC @ 10 V
-
10200 pF @ 25 V
-
-
APT20M22LVRG
MOSFET N-CH 200V 100A TO264
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-264-3, TO-264AA
-
TO-264 [L]
MOSFET (Metal Oxide)
POWER MOS V®
-
4V @ 2.5mA
200 V
100A (Tc)
10V
22mOhm @ 500mA, 10V
435 nC @ 10 V
±30V
10200 pF @ 25 V
520W (Tc)
-
APT10050LVRG
MOSFET N-CH 1000V 21A TO264
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-
N-Channel
TO-264-3, TO-264AA
-
TO-264 [L]
MOSFET (Metal Oxide)
POWER MOS V®
-
4V @ 2.5mA
1000 V
21A (Tc)
-
500mOhm @ 500mA, 10V
500 nC @ 10 V
-
7900 pF @ 25 V
-
-
APT20M38SVRG/TR
MOSFET N-CH 200V 67A D3PAK
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
D3PAK
MOSFET (Metal Oxide)
POWER MOS V®
-
4V @ 1mA
200 V
67A (Tc)
10V
38mOhm @ 33.5A, 10V
225 nC @ 10 V
±30V
6120 pF @ 25 V
370W (Tc)
-
APT10086BVFRG
MOSFET N-CH 1000V 13A TO247
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-
N-Channel
TO-247-3
-
TO-247 [B]
MOSFET (Metal Oxide)
POWER MOS V®
-
4V @ 1mA
1000 V
13A (Tc)
-
860mOhm @ 500mA, 10V
275 nC @ 10 V
-
4440 pF @ 25 V
-
-
APT8030LVRG
MOSFET N-CH 800V 27A TO264
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-
N-Channel
TO-264-3, TO-264AA
-
TO-264 [L]
MOSFET (Metal Oxide)
POWER MOS V®
-
4V @ 2.5mA
800 V
27A (Tc)
-
300mOhm @ 500mA, 10V
510 nC @ 10 V
-
7900 pF @ 25 V
-
-
APT10086BVRG
MOSFET N-CH 1000V 13A TO247
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-
N-Channel
TO-247-3
-
TO-247 [B]
MOSFET (Metal Oxide)
POWER MOS V®
-
4V @ 1mA
1000 V
13A (Tc)
-
860mOhm @ 500mA, 10V
275 nC @ 10 V
-
4440 pF @ 25 V
-
-
APT12080JVFR
MOSFET N-CH 1200V 15A ISOTOP
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Chassis Mount
-
N-Channel
SOT-227-4, miniBLOC
-
ISOTOP®
MOSFET (Metal Oxide)
POWER MOS V®
-
4V @ 2.5mA
1200 V
15A (Tc)
-
800mOhm @ 7.5A, 10V
485 nC @ 10 V
-
7800 pF @ 25 V
-
-
APT20M11JVFR
MOSFET N-CH 200V 175A ISOTOP
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
SOT-227-4, miniBLOC
-
ISOTOP®
MOSFET (Metal Oxide)
POWER MOS V®
-
4V @ 5mA
200 V
175A (Tc)
10V
11mOhm @ 500mA, 10V
180 nC @ 10 V
±30V
21600 pF @ 25 V
700W (Tc)
-
APT20M38SVRG
MOSFET N-CH 200V 67A D3PAK
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
-
D3PAK
MOSFET (Metal Oxide)
POWER MOS V®
-
4V @ 1mA
200 V
67A (Tc)
10V
38mOhm @ 500mA, 10V
225 nC @ 10 V
±30V
6120 pF @ 25 V
370W (Tc)
-
APT10M07JVR
MOSFET N-CH 100V 225A ISOTOP
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
SOT-227-4, miniBLOC
-
ISOTOP®
MOSFET (Metal Oxide)
POWER MOS V®
-
4V @ 5mA
100 V
225A (Tc)
10V
-
1050 nC @ 10 V
±30V
21600 pF @ 25 V
700W (Tc)
-
APT10M11JVR
MOSFET N-CH 100V 144A ISOTOP
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 150°C (TJ)
N-Channel
SOT-227-4, miniBLOC
-
ISOTOP®
MOSFET (Metal Oxide)
POWER MOS V®
-
4V @ 2.5mA
100 V
144A (Tc)
10V
-
450 nC @ 10 V
±30V
10300 pF @ 25 V
450W (Tc)
-
APT4012BVR
MOSFET N-CH 400V 37A TO247AD
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
TO-247AD
MOSFET (Metal Oxide)
POWER MOS V®
-
4V @ 1mA
400 V
37A (Tc)
10V
120mOhm @ 18.5A, 10V
290 nC @ 10 V
±30V
5400 pF @ 25 V
370W (Tc)
-
APT4012BVRG
MOSFET N-CH 400V 37A TO247AD
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
-
TO-247AD
MOSFET (Metal Oxide)
POWER MOS V®
-
4V @ 1mA
400 V
37A (Tc)
10V
120mOhm @ 18.5A, 10V
290 nC @ 10 V
±30V
5400 pF @ 25 V
370W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.