FDmesh™ II Plus Series, Single FETs, MOSFETs

Results:
4
Manufacturer
Series
Supplier Device Package
Package / Case
Mounting Type
Power Dissipation (Max)
Operating Temperature
FET Feature
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Grade
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Qualification
Technology
Current - Continuous Drain (Id) @ 25°C
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Results remaining4
Applied Filters:
FDmesh™ II Plus
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseSupplier Device PackageGradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
STB24N60DM2
MOSFET N-CH 600V 18A D2PAK
1+
$2.2817
5+
$2.1549
10+
$2.0282
Quantity
30,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
-
MOSFET (Metal Oxide)
-
18A (Tc)
5V @ 250µA
FDmesh™ II Plus
600 V
10V
200mOhm @ 9A, 10V
29 nC @ 10 V
±25V
1055 pF @ 100 V
150W (Tc)
-
STF24N60DM2
MOSFET N-CH 600V 18A TO220
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220 Full Pack
-
MOSFET (Metal Oxide)
-
18A (Tc)
5V @ 250µA
FDmesh™ II Plus
600 V
10V
200mOhm @ 9A, 10V
29 nC @ 10 V
±25V
1055 pF @ 100 V
30W (Tc)
-
STW24N60DM2
MOSFET N-CH 600V 18A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
-
MOSFET (Metal Oxide)
-
18A (Tc)
5V @ 250µA
FDmesh™ II Plus
600 V
10V
200mOhm @ 9A, 10V
29 nC @ 10 V
±25V
1055 pF @ 100 V
150W (Tc)
-
STP24N60DM2
MOSFET N-CH 600V 18A TO220
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220
-
MOSFET (Metal Oxide)
-
18A (Tc)
5V @ 250µA
FDmesh™ II Plus
600 V
10V
200mOhm @ 9A, 10V
29 nC @ 10 V
±25V
1055 pF @ 100 V
150W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.