Z-FET™ Series, Single FETs, MOSFETs

Results:
9
Manufacturer
Series
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Supplier Device Package
Operating Temperature
Mounting Type
Drain to Source Voltage (Vdss)
Package / Case
Vgs (Max)
FET Feature
FET Type
Grade
Qualification
Technology
Drive Voltage (Max Rds On, Min Rds On)
Results remaining9
Applied Filters:
Z-FET™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseDrain to Source Voltage (Vdss)Supplier Device PackageGradeSeriesFET FeatureCurrent - Continuous Drain (Id) @ 25°CTechnologyDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
C2M0160120D
SICFET N-CH 1200V 19A TO247-3
1+
$7.6056
5+
$7.1831
10+
$6.7606
Quantity
19,049 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
1200 V
TO-247-3
-
Z-FET™
-
19A (Tc)
SiCFET (Silicon Carbide)
20V
196mOhm @ 10A, 20V
2.5V @ 500µA
32.6 nC @ 20 V
+25V, -10V
527 pF @ 800 V
125W (Tc)
-
C2M1000170D
SICFET N-CH 1700V 4.9A TO247-3
1+
$5.0704
5+
$4.7887
10+
$4.5070
Quantity
13,507 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
1700 V
TO-247-3
-
Z-FET™
-
4.9A (Tc)
SiCFET (Silicon Carbide)
20V
1.1Ohm @ 2A, 20V
4V @ 500µA
13 nC @ 20 V
+25V, -10V
191 pF @ 1000 V
69W (Tc)
-
C2M0280120D
SICFET N-CH 1200V 10A TO247-3
1+
$8.2394
5+
$7.7817
10+
$7.3239
Quantity
4,050 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
1200 V
TO-247-3
-
Z-FET™
-
10A (Tc)
SiCFET (Silicon Carbide)
20V
370mOhm @ 6A, 20V
2.8V @ 1.25mA (Typ)
20.4 nC @ 20 V
+25V, -10V
259 pF @ 1000 V
62.5W (Tc)
-
C2M0040120D
SICFET N-CH 1200V 60A TO247-3
1+
$30.4225
5+
$28.7324
10+
$27.0423
Quantity
128 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
1200 V
TO-247-3
-
Z-FET™
-
60A (Tc)
SiCFET (Silicon Carbide)
20V
52mOhm @ 40A, 20V
2.8V @ 10mA
115 nC @ 20 V
+25V, -10V
1893 pF @ 1000 V
330W (Tc)
-
C2M0025120D
SICFET N-CH 1200V 90A TO247-3
1+
$45.6338
5+
$43.0986
10+
$40.5634
Quantity
45 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
1200 V
TO-247-3
-
Z-FET™
-
90A (Tc)
SiCFET (Silicon Carbide)
20V
34mOhm @ 50A, 20V
2.4V @ 10mA
161 nC @ 20 V
+25V, -10V
2788 pF @ 1000 V
463W (Tc)
-
CPMF-1200-S080B
SICFET N-CH 1200V 50A DIE
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
Die
1200 V
Die
-
Z-FET™
-
50A (Tj)
SiCFET (Silicon Carbide)
20V
110mOhm @ 20A, 20V
4V @ 1mA
90.8 nC @ 20 V
+25V, -5V
1915 pF @ 800 V
313mW (Tj)
-
CPMF-1200-S160B
SICFET N-CH 1200V 28A DIE
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
Die
1200 V
Die
-
Z-FET™
-
28A (Tj)
SiCFET (Silicon Carbide)
20V
220mOhm @ 10A, 20V
4V @ 1mA
47.1 nC @ 20 V
+25V, -5V
928 pF @ 800 V
202W (Tj)
-
CMF20120D
SICFET N-CH 1200V 42A TO247-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 135°C (TJ)
N-Channel
TO-247-3
1200 V
TO-247-3
-
Z-FET™
-
42A (Tc)
SiCFET (Silicon Carbide)
20V
110mOhm @ 20A, 20V
4V @ 1mA
90.8 nC @ 20 V
+25V, -5V
1915 pF @ 800 V
215W (Tc)
-
CMF10120D
SICFET N-CH 1200V 24A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 135°C (TJ)
N-Channel
TO-247-3
1200 V
TO-247
-
Z-FET™
-
24A (Tc)
SiCFET (Silicon Carbide)
20V
220mOhm @ 10A, 20V
4V @ 500µA
47.1 nC @ 20 V
+25V, -5V
928 pF @ 800 V
134W (Tc)
-

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.