MDmesh™ DM6 Series, Single FETs, MOSFETs

Results:
24
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Vgs(th) (Max) @ Id
Operating Temperature
Grade
Mounting Type
Qualification
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Technology
Vgs (Max)
Results remaining24
Applied Filters:
MDmesh™ DM6
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseFET TypeSupplier Device PackageGradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
STP26N60DM6
MOSFET N-CH 600V 18A TO220
1+
$12.6761
5+
$11.9718
10+
$11.2676
Quantity
2,260 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
N-Channel
TO-220
-
MOSFET (Metal Oxide)
-
18A (Tc)
MDmesh™ DM6
600 V
10V
195mOhm @ 9A, 10V
4.75V @ 250µA
24 nC @ 10 V
±25V
940 pF @ 100 V
130W (Tc)
-
STB47N60DM6AG
AUTOMOTIVE-GRADE N-CHANNEL 600 V
1+
$24.0845
5+
$22.7465
10+
$21.4085
Quantity
580 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
N-Channel
TO-263 (D2Pak)
Automotive
MOSFET (Metal Oxide)
-
36A (Tc)
MDmesh™ DM6
600 V
10V
80mOhm @ 18A, 10V
4.75V @ 250µA
55 nC @ 10 V
±25V
2350 pF @ 100 V
250W (Tc)
AEC-Q101
STW65N60DM6
MOSFET N-CH 600V 38A TO247
1+
$202.8169
5+
$191.5493
10+
$180.2817
Quantity
194 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-
TO-247-3
N-Channel
TO-247-3
-
MOSFET (Metal Oxide)
-
38A (Tc)
MDmesh™ DM6
600 V
-
-
-
-
±25V
-
-
-
STW50N65DM6
MOSFET N-CH 650V 33A TO247-3
1+
$11.6620
5+
$11.0141
10+
$10.3662
Quantity
103 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
N-Channel
TO-247 Long Leads
-
MOSFET (Metal Oxide)
-
33A (Tc)
MDmesh™ DM6
650 V
10V
91mOhm @ 16.5A, 10V
4.75V @ 250µA
52.5 nC @ 10 V
±25V
52500 pF @ 100 V
250W (Tc)
-
STW45N60DM6
MOSFET N-CH 600V 30A TO247
1+
$4.8169
5+
$4.5493
10+
$4.2817
Quantity
20 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
N-Channel
TO-247-3
-
MOSFET (Metal Oxide)
-
30A (Tc)
MDmesh™ DM6
600 V
10V
99mOhm @ 15A, 10V
4.75V @ 250µA
44 nC @ 10 V
±25V
1920 pF @ 100 V
210W (Tc)
-
STL36N60DM6
MOSFET N-CH 600V 15A PWRFLAT HV
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerVDFN
N-Channel
PowerFlat™ (8x8) HV
-
MOSFET (Metal Oxide)
-
15A (Tc)
MDmesh™ DM6
600 V
10V
215mOhm @ 7.5A, 10V
4.75V @ 250µA
24 nC @ 10 V
±25V
940 pF @ 100 V
110W (Tc)
-
STF26N60DM6
MOSFET N-CH 600V 18A TO220FP
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3 Full Pack
N-Channel
TO-220FP
-
MOSFET (Metal Oxide)
-
18A (Tc)
MDmesh™ DM6
600 V
10V
195mOhm @ 9A, 10V
4.75V @ 250µA
24 nC @ 10 V
±25V
940 pF @ 100 V
30W (Tc)
-
STP45N60DM6
MOSFET N-CH 600V 30A TO220
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
N-Channel
TO-220
-
MOSFET (Metal Oxide)
-
30A (Tc)
MDmesh™ DM6
600 V
10V
99mOhm @ 15A, 10V
4.75V @ 250µA
44 nC @ 10 V
±25V
1920 pF @ 100 V
210W (Tc)
-
STB50N65DM6
MOSFET N-CH 650V 33A D2PAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
N-Channel
TO-263 (D2Pak)
-
MOSFET (Metal Oxide)
-
33A (Tc)
MDmesh™ DM6
650 V
10V
91mOhm @ 16.5A, 10V
4.75V @ 250µA
52.5 nC @ 10 V
±25V
2300 pF @ 100 V
250W (Tc)
-
STW70N65DM6
MOSFET N-CH 650V 68A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
N-Channel
TO-247-3
-
MOSFET (Metal Oxide)
-
68A (Tc)
MDmesh™ DM6
650 V
10V
40mOhm @ 34A, 10V
4.75V @ 250µA
125 nC @ 10 V
±25V
4900 pF @ 100 V
450W (Tc)
-
STL52N60DM6
N-CHANNEL 600 V, 0.084 OHM TYP.,
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerVDFN
N-Channel
PowerFlat™ (8x8) HV
-
MOSFET (Metal Oxide)
-
45A (Tc)
MDmesh™ DM6
600 V
10V
84mOhm @ 22.5A, 10V
4.75V @ 250µA
52 nC @ 10 V
±25V
2468 pF @ 100 V
174W (Tc)
-
STB41N40DM6AG
AUTOMOTIVE-GRADE N-CHANNEL 400 V
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
N-Channel
TO-263 (D2Pak)
Automotive
MOSFET (Metal Oxide)
-
41A (Tc)
MDmesh™ DM6
400 V
10V
65mOhm @ 20.5A, 10V
5V @ 250µA
53 nC @ 10 V
±25V
2310 pF @ 100 V
250W (Tc)
AEC-Q101
STWA70N60DM6
MOSFET N-CH 600V 62A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-
TO-247-3
N-Channel
TO-247 Long Leads
-
MOSFET (Metal Oxide)
-
62A (Tc)
MDmesh™ DM6
600 V
-
-
-
-
±25V
-
-
-
STWA70N65DM6
MOSFET N-CH 650V 68A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
N-Channel
TO-247 Long Leads
-
MOSFET (Metal Oxide)
-
68A (Tc)
MDmesh™ DM6
650 V
10V
40mOhm @ 34A, 10V
4.75V @ 250µA
125 nC @ 10 V
±25V
4900 pF @ 100 V
450W (Tc)
-
STO65N60DM6
N-CHANNEL 600 V, 67 MOHM TYP., 4
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerSFN
N-Channel
TOLL (HV)
-
MOSFET (Metal Oxide)
-
46A (Tc)
MDmesh™ DM6
600 V
10V
76mOhm @ 23A, 10V
4.75V @ 250µA
65.2 nC @ 10 V
±25V
2500 pF @ 100 V
320W (Tc)
-
STO67N60DM6
MOSFET N-CH 600V 33A TOLL
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerSFN
N-Channel
TOLL (HV)
-
MOSFET (Metal Oxide)
-
33A (Tc)
MDmesh™ DM6
600 V
10V
59mOhm @ 23.75A, 10V
4.75V @ 250µA
72.5 nC @ 10 V
±25V
3400 pF @ 100 V
150W (Tc)
-
STW75N60DM6
MOSFET N-CH 600V 72A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-
TO-247-3
N-Channel
TO-247-3
-
MOSFET (Metal Oxide)
-
72A (Tc)
MDmesh™ DM6
600 V
-
-
-
-
±25V
-
-
-
STP50N60DM6
MOSFET N-CH 600V 36A TO220
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
N-Channel
TO-220
-
MOSFET (Metal Oxide)
-
36A (Tc)
MDmesh™ DM6
600 V
10V
80mOhm @ 18A, 10V
4.75V @ 250µA
55 nC @ 10 V
±25V
2350 pF @ 100 V
250W (Tc)
-
STWA75N60DM6
MOSFET N-CH 600V 72A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-
TO-247-3
N-Channel
TO-247 Long Leads
-
MOSFET (Metal Oxide)
-
72A (Tc)
MDmesh™ DM6
600 V
-
-
-
-
±25V
-
-
-
STWA65N60DM6
MOSFET N-CH 600V 38A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-
TO-247-3
N-Channel
TO-247 Long Leads
-
MOSFET (Metal Oxide)
-
38A (Tc)
MDmesh™ DM6
600 V
-
-
-
-
±25V
-
-
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.