DirectFET™ Series, Single FETs, MOSFETs

Results:
3
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Current - Continuous Drain (Id) @ 25°C
Drain to Source Voltage (Vdss)
Operating Temperature
FET Feature
FET Type
Grade
Mounting Type
Supplier Device Package
Power Dissipation (Max)
Qualification
Package / Case
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Results remaining3
Applied Filters:
DirectFET™
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypeDrain to Source Voltage (Vdss)GradeTechnologySeriesFET FeatureVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackagePackage / CaseQualification
IRF6721STRPBF
MOSFET N-CH 30V 14A/60A DIRECTFT
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
30 V
-
MOSFET (Metal Oxide)
DirectFET™
-
2.4V @ 25µA
14A (Ta), 60A (Tc)
-
7.3mOhm @ 14A, 10V
17 nC @ 4.5 V
±20V
1430 pF @ 15 V
2.2W (Ta), 42W (Tc)
DirectFET™ Isometric SQ
DirectFET™ Isometric SQ
-
IRF6711STRPBF
MOSFET N-CH 25V 19A/84A DIRECTFT
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
25 V
-
MOSFET (Metal Oxide)
DirectFET™
-
2.35V @ 25µA
19A (Ta), 84A (Tc)
-
3.8mOhm @ 19A, 10V
20 nC @ 4.5 V
±20V
1810 pF @ 13 V
2.2W (Ta), 42W (Tc)
DirectFET™ Isometric SQ
DirectFET™ Isometric SQ
-
IRF6713STRPBF
MOSFET N-CH 25V 22A/95A DIRECTFT
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 150°C (TJ)
N-Channel
25 V
-
MOSFET (Metal Oxide)
DirectFET™
-
2.4V @ 50µA
22A (Ta), 95A (Tc)
-
3mOhm @ 22A, 10V
32 nC @ 4.5 V
±20V
2880 pF @ 13 V
2.2W (Ta), 42W (Tc)
DirectFET™ Isometric SQ
DirectFET™ Isometric SQ
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.