Ultra X Series, Single FETs, MOSFETs

Results:
11
Manufacturer
Series
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Supplier Device Package
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Package / Case
Mounting Type
Vgs(th) (Max) @ Id
Operating Temperature
FET Feature
FET Type
Grade
Drain to Source Voltage (Vdss)
Qualification
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Results remaining11
Applied Filters:
Ultra X
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseSupplier Device PackageDrain to Source Voltage (Vdss)GradeTechnologyFET FeatureVgs(th) (Max) @ IdSeriesCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
IXTH52N65X
MOSFET N-CH 650V 52A TO247
1+
$7.3521
5+
$6.9437
10+
$6.5352
Quantity
4,642 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247 (IXTH)
650 V
-
MOSFET (Metal Oxide)
-
5V @ 250µA
Ultra X
52A (Tc)
10V
68mOhm @ 26A, 10V
113 nC @ 10 V
±30V
4350 pF @ 25 V
660W (Tc)
-
IXTP32N65X
MOSFET N-CH 650V 32A TO220-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220-3
650 V
-
MOSFET (Metal Oxide)
-
5.5V @ 250µA
Ultra X
32A (Tc)
10V
135mOhm @ 16A, 10V
54 nC @ 10 V
±30V
2205 pF @ 25 V
500W (Tc)
-
IXTQ32N65X
MOSFET N-CH 650V 32A TO3P
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-3P-3, SC-65-3
TO-3P
650 V
-
MOSFET (Metal Oxide)
-
5.5V @ 250µA
Ultra X
32A (Tc)
10V
135mOhm @ 16A, 10V
54 nC @ 10 V
±30V
2205 pF @ 25 V
500W (Tc)
-
IXTP20N65XM
MOSFET N-CH 650V 9A TO220
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220-3
650 V
-
MOSFET (Metal Oxide)
-
5.5V @ 250µA
Ultra X
9A (Tc)
10V
210mOhm @ 10A, 10V
35 nC @ 10 V
±30V
1390 pF @ 25 V
63W (Tc)
-
IXTA20N65X
MOSFET N-CH 650V 20A TO263
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AA
650 V
-
MOSFET (Metal Oxide)
-
5.5V @ 250µA
Ultra X
20A (Tc)
10V
210mOhm @ 10A, 10V
35 nC @ 10 V
±30V
1390 pF @ 25 V
320W (Tc)
-
IXTP32N65XM
MOSFET N-CH 650V 14A TO220-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220-3
650 V
-
MOSFET (Metal Oxide)
-
5.5V @ 250µA
Ultra X
14A (Tc)
10V
135mOhm @ 16A, 10V
54 nC @ 10 V
±30V
2206 pF @ 25 V
78W (Tc)
-
IXTA20N65X-TRL
MOSFET N-CH 650V 20A TO263
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
650 V
-
MOSFET (Metal Oxide)
-
5.5V @ 250µA
Ultra X
20A (Tc)
10V
210mOhm @ 10A, 10V
35 nC @ 10 V
±30V
1390 pF @ 25 V
320W (Tc)
-
IXTP20N65X
MOSFET N-CH 650V 20A TO220
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220-3
650 V
-
MOSFET (Metal Oxide)
-
5.5V @ 250µA
Ultra X
20A (Tc)
10V
210mOhm @ 10A, 10V
35 nC @ 10 V
±30V
1390 pF @ 25 V
320W (Tc)
-
IXTH32N65X
MOSFET N-CH 650V 32A TO247
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247 (IXTH)
650 V
-
MOSFET (Metal Oxide)
-
5.5V @ 250µA
Ultra X
32A (Tc)
10V
135mOhm @ 16A, 10V
54 nC @ 10 V
±30V
2205 pF @ 25 V
500W (Tc)
-
IXTH64N65X
MOSFET N-CH 650V 64A TO247
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247 (IXTH)
650 V
-
MOSFET (Metal Oxide)
-
5V @ 250µA
Ultra X
64A (Tc)
10V
51mOhm @ 32A, 10V
143 nC @ 10 V
±30V
5500 pF @ 25 V
890W (Tc)
-
IXTH20N65X
MOSFET N-CH 650V 20A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247 (IXTH)
650 V
-
MOSFET (Metal Oxide)
-
5.5V @ 250µA
Ultra X
20A (Tc)
10V
210mOhm @ 10A, 10V
35 nC @ 10 V
±30V
1390 pF @ 25 V
320W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.