GigaMOS™ Series, Single FETs, MOSFETs

Results:
11
Manufacturer
Series
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Drain to Source Voltage (Vdss)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Supplier Device Package
Vgs(th) (Max) @ Id
Package / Case
Power Dissipation (Max)
Operating Temperature
Mounting Type
FET Feature
FET Type
Grade
Qualification
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Results remaining11
Applied Filters:
GigaMOS™
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseSupplier Device PackageTechnologyFET FeatureVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)
IXTM35N30
MOSFET N-CH 300V 35A TO204AE
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-204AE
TO-204AE
MOSFET (Metal Oxide)
-
4V @ 250µA
GigaMOS™
300 V
35A (Tc)
10V
100mOhm @ 17.5A, 10V
220 nC @ 10 V
±20V
4600 pF @ 25 V
300W (Tc)
IXTM50N20
MOSFET N-CH 200V 50A TO204AE
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-204AE
TO-204AE
MOSFET (Metal Oxide)
-
4V @ 250µA
GigaMOS™
200 V
50A (Tc)
10V
45mOhm @ 25A, 10V
220 nC @ 10 V
±20V
4600 pF @ 25 V
300W (Tc)
IXTM11N80
MOSFET N-CH 800V 11A TO204AA
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-204AA, TO-3
TO-204AA (IXTM)
MOSFET (Metal Oxide)
-
4.5V @ 250µA
GigaMOS™
800 V
11A (Tc)
10V
950mOhm @ 5.5A, 10V
170 nC @ 10 V
±20V
4500 pF @ 25 V
300W (Tc)
IXTM67N10
MOSFET N-CH 100V 67A TO204AE
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-204AE
TO-204AE
MOSFET (Metal Oxide)
-
4V @ 4mA
GigaMOS™
100 V
67A (Tc)
10V
25mOhm @ 33.5A, 10V
260 nC @ 10 V
±20V
4500 pF @ 25 V
300W (Tc)
IXTM12N100
MOSFET N-CH 1000V 12A TO204AA
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-204AA, TO-3
TO-204AA (IXTM)
MOSFET (Metal Oxide)
-
4.5V @ 250µA
GigaMOS™
1000 V
12A (Tc)
10V
1.05Ohm @ 6A, 10V
170 nC @ 10 V
±20V
4000 pF @ 25 V
300W (Tc)
IXTM40N30
MOSFET N-CH 300V 40A TO204AE
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-204AE
TO-204AE
MOSFET (Metal Oxide)
-
4V @ 250µA
GigaMOS™
300 V
40A (Tc)
10V
88mOhm @ 20A, 10V
220 nC @ 10 V
±20V
4600 pF @ 25 V
300W (Tc)
IXFX210N17T
MOSFET N-CH 170V 210A PLUS247-3
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
N-Channel
TO-247-3 Variant
PLUS247™-3
MOSFET (Metal Oxide)
-
5V @ 4mA
GigaMOS™
170 V
210A (Tc)
10V
7.5mOhm @ 60A, 10V
285 nC @ 10 V
±20V
18800 pF @ 25 V
1150W (Tc)
IXFK260N17T
MOSFET N-CH 170V 260A TO264AA
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
N-Channel
TO-264-3, TO-264AA
TO-264AA (IXFK)
MOSFET (Metal Oxide)
-
5V @ 8mA
GigaMOS™
170 V
260A (Tc)
10V
6.5mOhm @ 60A, 10V
400 nC @ 10 V
±20V
24000 pF @ 25 V
1670W (Tc)
IXFK210N17T
MOSFET N-CH 170V 210A TO264AA
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
N-Channel
TO-264-3, TO-264AA
TO-264AA (IXFK)
MOSFET (Metal Oxide)
-
5V @ 4mA
GigaMOS™
170 V
210A (Tc)
10V
7.5mOhm @ 60A, 10V
285 nC @ 10 V
±20V
18800 pF @ 25 V
1150W (Tc)
IXFX260N17T
MOSFET N-CH 170V 260A PLUS247-3
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
N-Channel
TO-247-3 Variant
PLUS247™-3
MOSFET (Metal Oxide)
-
5V @ 8mA
GigaMOS™
170 V
260A (Tc)
10V
6.5mOhm @ 60A, 10V
400 nC @ 10 V
±20V
24000 pF @ 25 V
1670W (Tc)
IXFN260N17T
MOSFET N-CH 170V 245A SOT227B
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Quantity
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PCB Symbol, Footprint & 3D Model
Chassis Mount
-55°C ~ 175°C (TJ)
N-Channel
SOT-227-4, miniBLOC
SOT-227B
MOSFET (Metal Oxide)
-
5V @ 8mA
GigaMOS™
170 V
245A (Tc)
10V
6.5mOhm @ 60A, 10V
400 nC @ 10 V
±20V
24000 pF @ 25 V
1090W (Tc)

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.