Single FETs, MOSFETs

Results:
44,485
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Gate Charge (Qg) (Max) @ Vgs
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Drain to Source Voltage (Vdss)
Operating Temperature
Qualification
Power - Max
FET Feature
Technology
Configuration
Mounting Type
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Voltage - Cutoff (VGS off) @ Id
Frequency - Transition
Current - Collector (Ic) (Max)
Grade
Current - Drain (Idss) @ Vds (Vgs=0)
FET Type
Current Rating (Amps)
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Voltage - Rated
Transistor Type
Current - Test
Gain
Power - Output
Input Type
Number of Outputs
Voltage - Test
Frequency
Voltage - Breakdown (V(BR)GSS)
Cable Opening
Voltage Rating
Shell Size, MIL
Resistance - RDS(On)
Gate Type
Material Flammability Rating
Current - Output (Max)
Voltage - Supply
Channel Type
High Side Voltage - Max (Bootstrap)
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Operating Temperature - Junction
Logic Voltage - VIL, VIH
Driven Configuration
Capacitance @ Vr, F
Color
Shielding
Voltage - Load
Orientation
Current - Peak Output (Source, Sink)
Current - Reverse Leakage @ Vr
Shell Material
Rise / Fall Time (Typ)
Reverse Recovery Time (trr)
Ingress Protection
Output Type
Current Drain (Id) - Max
Output Configuration
Shell Finish
Shell Size - Insert
Voltage - Output
Connector Type
Features
Noise Figure
Voltage - Supply (Vcc/Vdd)
Voltage - Input
Primary Material
Contact Finish - Mating
Speed
Number of Positions
Applications
Ratio - Input
Switch Type
Number of Drivers
Termination
Fastening Type
Rds On (Typ)
Mounting Feature
Fault Protection
Voltage - Forward (Vf) (Max) @ If
Interface
Results remaining44,485
Select
ImageProduct DetailPriceAvailabilityECAD ModelSeriesMounting TypeOperating TemperaturePackage / CaseFET TypeDrain to Source Voltage (Vdss)Supplier Device PackageGradeTechnologyFET FeatureRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Vgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
BSS138-TP
1+
$0.0165
5+
$0.0156
10+
$0.0146
Quantity
4,365,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
N-Channel
50 V
SOT-23
-
MOSFET (Metal Oxide)
-
3.5Ohm @ 220mA, 10V
1.5V @ 1mA
-
220mA (Tj)
4.5V, 10V
±20V
60 pF @ 25 V
350mW
-
2N7002K-AU_R1_000A2
60V N-CHANNEL ENHANCEMENT MODE M
1+
$0.0165
5+
$0.0156
10+
$0.0146
Quantity
3,501,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
N-Channel
60 V
SOT-23
Automotive
MOSFET (Metal Oxide)
-
3Ohm @ 500mA, 10V
2.5V @ 250µA
0.8 nC @ 5 V
300mA (Ta)
4.5V, 10V
±20V
35 pF @ 25 V
500mW (Ta)
AEC-Q101
DMN10H120SFG-13
MOSFET N-CH 100V 3.8A PWRDI3333
1+
$0.2535
5+
$0.2394
10+
$0.2254
Quantity
2,925,847 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerVDFN
N-Channel
100 V
PowerDI3333-8
-
MOSFET (Metal Oxide)
-
110mOhm @ 3.3A, 10V
3V @ 250µA
10.6 nC @ 10 V
3.8A (Ta)
6V, 10V
±20V
549 pF @ 50 V
1W (Ta)
-
DMN2230U-7
MOSFET N-CH 20V 2A SOT23-3
1+
$0.2535
5+
$0.2394
10+
$0.2254
Quantity
1,593,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
N-Channel
20 V
SOT-23-3
-
MOSFET (Metal Oxide)
-
110mOhm @ 2.5A, 4.5V
1V @ 250µA
-
2A (Ta)
1.8V, 4.5V
±12V
188 pF @ 10 V
600mW (Ta)
-
XP152A12C0MR-G
MOSFET P-CH 20V 700MA SOT23
1+
$0.1648
5+
$0.1556
10+
$0.1465
Quantity
1,500,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
150°C (TA)
TO-236-3, SC-59, SOT-23-3
P-Channel
20 V
SOT-23
-
MOSFET (Metal Oxide)
-
300mOhm @ 400mA, 4.5V
1.2V @ 1mA
-
700mA (Ta)
2.5V, 4.5V
±12V
180 pF @ 10 V
500mW (Ta)
-
2N7002,215
MOSFET N-CH 60V 300MA TO236AB
1+
$0.0160
5+
$0.0151
10+
$0.0142
Quantity
1,313,632 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
TrenchMOS™
Surface Mount
-65°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
N-Channel
60 V
TO-236AB
-
MOSFET (Metal Oxide)
-
5Ohm @ 500mA, 10V
2.5V @ 250µA
-
300mA (Tc)
10V
±30V
50 pF @ 10 V
830mW (Ta)
-
2V7002KT1G
MOSFET N-CH 60V 320MA SOT23
1+
$0.0583
5+
$0.0551
10+
$0.0518
Quantity
1,106,570 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
N-Channel
60 V
SOT-23-3 (TO-236)
Automotive
MOSFET (Metal Oxide)
-
1.6Ohm @ 500mA, 10V
2.3V @ 250µA
0.7 nC @ 4.5 V
320mA (Ta)
4.5V, 10V
±20V
24.5 pF @ 20 V
300mW (Tj)
AEC-Q101
SI2318CDS-T1-GE3
MOSFET N-CH 40V 5.6A SOT23-3
1+
$0.2274
5+
$0.2148
10+
$0.2021
Quantity
1,097,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
TrenchFET®
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
N-Channel
40 V
SOT-23-3 (TO-236)
-
MOSFET (Metal Oxide)
-
42mOhm @ 4.3A, 10V
2.5V @ 250µA
9 nC @ 10 V
5.6A (Tc)
4.5V, 10V
±20V
340 pF @ 20 V
1.25W (Ta), 2.1W (Tc)
-
TSM2303CX RFG
MOSFET P-CHANNEL 30V 1.3A SOT23
1+
$0.1268
5+
$0.1197
10+
$0.1127
Quantity
963,062 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
P-Channel
30 V
SOT-23
-
MOSFET (Metal Oxide)
-
180mOhm @ 1.3A, 10V
3V @ 250µA
3.2 nC @ 4.5 V
1.3A (Ta)
4.5V, 10V
±20V
565 pF @ 10 V
700mW (Ta)
-
STF140N6F7
MOSFET N-CH 60V 70A TO220FP
1+
$0.6592
5+
$0.6225
10+
$0.5859
Quantity
950,102 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
STripFET™
Through Hole
175°C (TJ)
TO-220-3 Full Pack
N-Channel
60 V
TO-220FP
-
MOSFET (Metal Oxide)
-
3.5mOhm @ 35A, 10V
4V @ 250µA
55 nC @ 10 V
70A (Tc)
10V
±20V
3100 pF @ 25 V
33W (Tc)
-
DMP21D2UFA-7B
MOSFET P-CH 20V 330MA 3DFN
1+
$0.1521
5+
$0.1437
10+
$0.1352
Quantity
924,391 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
3-XFDFN
P-Channel
20 V
X2-DFN0806-3
-
MOSFET (Metal Oxide)
-
1Ohm @ 200mA, 4.5V
1V @ 250µA
0.8 nC @ 4.5 V
330mA (Ta)
1.5V, 4.5V
±8V
49 pF @ 15 V
360mW (Ta)
-
NTK3043NT1G
MOSFET N-CH 20V 210MA SOT723
1+
$0.0634
5+
$0.0599
10+
$0.0563
Quantity
914,601 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
SOT-723
N-Channel
20 V
SOT-723
-
MOSFET (Metal Oxide)
-
3.4Ohm @ 10mA, 4.5V
1.3V @ 250µA
-
210mA (Ta)
1.65V, 4.5V
±10V
11 pF @ 10 V
310mW (Ta)
-
TSM2309CX RFG
MOSFET P-CHANNEL 60V 3.1A SOT23
1+
$0.1318
5+
$0.1245
10+
$0.1172
Quantity
910,835 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
150°C (TJ)
TO-236-3, SC-59, SOT-23-3
P-Channel
60 V
SOT-23
-
MOSFET (Metal Oxide)
-
190mOhm @ 3A, 10V
2.5V @ 250µA
8.2 nC @ 10 V
3.1A (Tc)
4.5V, 10V
±20V
425 pF @ 30 V
1.56W (Tc)
-
MCAC25P10YHE3-TP
1+
$0.7859
5+
$0.7423
10+
$0.6986
Quantity
905,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerTDFN
P-Channel
100 V
DFN5060
Automotive
MOSFET (Metal Oxide)
-
55mOhm @ 20A, 10V
2.5V @ 250µA
40 nC @ 10 V
25A
4.5V, 10V
±20V
2200 pF @ 50 V
70W (Tj)
AEC-Q101
RZM002P02T2L
MOSFET P-CH 20V 200MA VMT3
1+
$0.0355
5+
$0.0335
10+
$0.0315
Quantity
901,002 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
150°C (TJ)
SOT-723
P-Channel
20 V
VMT3
-
MOSFET (Metal Oxide)
-
1.2Ohm @ 200mA, 4.5V
1V @ 100µA
1.4 nC @ 4.5 V
200mA (Ta)
1.2V, 4.5V
±10V
115 pF @ 10 V
150mW (Ta)
-
FDV303N
MOSFET N-CH 25V 680MA SOT23
1+
$0.0634
5+
$0.0599
10+
$0.0563
Quantity
878,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
N-Channel
25 V
SOT-23-3
-
MOSFET (Metal Oxide)
-
450mOhm @ 500mA, 4.5V
1.5V @ 250µA
2.3 nC @ 4.5 V
680mA (Ta)
2.7V, 4.5V
±8V
50 pF @ 10 V
350mW (Ta)
-
SI9407BDY-T1-GE3
MOSFET P-CH 60V 4.7A 8SO
1+
$0.2535
5+
$0.2394
10+
$0.2254
Quantity
859,880 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
TrenchFET®
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
P-Channel
60 V
8-SOIC
-
MOSFET (Metal Oxide)
-
120mOhm @ 3.2A, 10V
3V @ 250µA
22 nC @ 10 V
4.7A (Tc)
4.5V, 10V
±20V
600 pF @ 30 V
2.4W (Ta), 5W (Tc)
-
CSD13381F4
MOSFET N-CH 12V 2.1A 3PICOSTAR
1+
$0.0507
5+
$0.0479
10+
$0.0451
Quantity
850,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
NexFET™
Surface Mount
-55°C ~ 150°C (TJ)
3-XFDFN
N-Channel
12 V
3-PICOSTAR
-
MOSFET (Metal Oxide)
-
180mOhm @ 500mA, 4.5V
1.1V @ 250µA
1.4 nC @ 4.5 V
2.1A (Ta)
1.8V, 4.5V
8V
200 pF @ 6 V
500mW (Ta)
-
FDN338P
SMALL SIGNAL FIELD-EFFECT TRANSI
1+
$0.1268
5+
$0.1197
10+
$0.1127
Quantity
845,095 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
P-Channel
20 V
SOT-23-3
MOSFET (Metal Oxide)
-
115mOhm @ 1.6A, 4.5V
1.5V @ 250µA
6.2 nC @ 4.5 V
1.6A (Ta)
2.5V, 4.5V
±8V
451 pF @ 10 V
500mW (Ta)
AO3401A
1+
$0.0507
5+
$0.0479
10+
$0.0451
Quantity
828,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
3-SMD, SOT-23-3 Variant
P-Channel
30 V
SOT-23-3
-
MOSFET (Metal Oxide)
-
44mOhm @ 4.3A, 10V
1.3V @ 250µA
12.2 nC @ 4.5 V
4A (Ta)
2.5V, 10V
±12V
1200 pF @ 15 V
1.4W (Ta)
-

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.