PolarP2™ Series, Single FETs, MOSFETs

Results:
9
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Supplier Device Package
Power Dissipation (Max)
Package / Case
Current - Continuous Drain (Id) @ 25°C
Mounting Type
Operating Temperature
FET Feature
FET Type
Grade
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Qualification
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Results remaining9
Applied Filters:
PolarP2™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseSupplier Device PackageGradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
IXTH450P2
MOSFET N-CH 500V 16A TO247
1+
$13.9437
5+
$13.1690
10+
$12.3944
Quantity
760 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247 (IXTH)
-
MOSFET (Metal Oxide)
-
16A (Tc)
4.5V @ 250µA
PolarP2™
500 V
10V
330mOhm @ 8A, 10V
43 nC @ 10 V
±30V
2530 pF @ 25 V
300W (Tc)
-
IXTQ450P2
MOSFET N-CH 500V 16A TO3P
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-3P-3, SC-65-3
TO-3P
-
MOSFET (Metal Oxide)
-
16A (Tc)
4.5V @ 250µA
PolarP2™
500 V
10V
330mOhm @ 8A, 10V
43 nC @ 10 V
±30V
2530 pF @ 25 V
300W (Tc)
-
IXTA460P2
MOSFET N-CH 500V 24A TO263
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AA
-
MOSFET (Metal Oxide)
-
24A (Tc)
4.5V @ 250µA
PolarP2™
500 V
10V
270mOhm @ 12A, 10V
48 nC @ 10 V
±30V
2890 pF @ 25 V
480W (Tc)
-
IXTH460P2
MOSFET N-CH 500V 24A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247 (IXTH)
-
MOSFET (Metal Oxide)
-
24A (Tc)
4.5V @ 250µA
PolarP2™
500 V
10V
270mOhm @ 12A, 10V
48 nC @ 10 V
±30V
2890 pF @ 25 V
480W (Tc)
-
IXTQ470P2
MOSFET N-CH 500V 42A TO3P
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-3P-3, SC-65-3
TO-3P
-
MOSFET (Metal Oxide)
-
42A (Tc)
4.5V @ 250µA
PolarP2™
500 V
10V
145mOhm @ 500mA, 10V
88 nC @ 10 V
±30V
5400 pF @ 25 V
830W (Tc)
-
IXTQ480P2
MOSFET N-CH 500V 52A TO3P
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-3P-3, SC-65-3
TO-3P
-
MOSFET (Metal Oxide)
-
52A (Tc)
4.5V @ 250µA
PolarP2™
500 V
10V
120mOhm @ 26A, 10V
108 nC @ 10 V
±30V
6800 pF @ 25 V
960W (Tc)
-
IXTQ460P2
MOSFET N-CH 500V 24A TO3P
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-3P-3, SC-65-3
TO-3P
-
MOSFET (Metal Oxide)
-
24A (Tc)
4.5V @ 250µA
PolarP2™
500 V
10V
270mOhm @ 12A, 10V
48 nC @ 10 V
±30V
2890 pF @ 25 V
480W (Tc)
-
IXTP460P2
MOSFET N-CH 500V 24A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220-3
-
MOSFET (Metal Oxide)
-
24A (Tc)
4.5V @ 250µA
PolarP2™
500 V
10V
270mOhm @ 12A, 10V
48 nC @ 10 V
±30V
2890 pF @ 25 V
480W (Tc)
-
IXTP450P2
MOSFET N-CH 500V 16A TO220AB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220-3
-
MOSFET (Metal Oxide)
-
16A (Tc)
4.5V @ 250µA
PolarP2™
500 V
10V
330mOhm @ 8A, 10V
43 nC @ 10 V
±30V
2530 pF @ 25 V
300W (Tc)
-

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.