TrenchFET® Gen V Series, Single FETs, MOSFETs

Results:
22
Manufacturer
Series
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Rds On (Max) @ Id, Vgs
Power Dissipation (Max)
Supplier Device Package
Drain to Source Voltage (Vdss)
Package / Case
Operating Temperature
Vgs(th) (Max) @ Id
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Grade
Mounting Type
Qualification
Technology
Results remaining22
Applied Filters:
TrenchFET® Gen V
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypeGradeTechnologySeriesFET FeatureVgs(th) (Max) @ IdPackage / CaseSupplier Device PackageDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
SIR510DP-T1-RE3
N-CHANNEL 100 V (D-S) MOSFET POW
1+
$4.5634
5+
$4.3099
10+
$4.0563
Quantity
5,838 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
TrenchFET® Gen V
-
4V @ 250µA
PowerPAK® SO-8
PowerPAK® SO-8
100 V
31A (Ta), 126A (Tc)
7.5V, 10V
3.6mOhm @ 20A, 10V
81 nC @ 10 V
±20V
4980 pF @ 50 V
6.25W (Ta), 104W (Tc)
-
SIR580DP-T1-RE3
N-CHANNEL 80-V (D-S) MOSFET
1+
$12.6761
5+
$11.9718
10+
$11.2676
Quantity
3,352 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
TrenchFET® Gen V
-
4V @ 250µA
PowerPAK® SO-8
PowerPAK® SO-8
80 V
35.8A (Ta), 146A (Tc)
7.5V, 10V
2.7mOhm @ 20A, 10V
76 nC @ 10 V
±20V
4100 pF @ 40 V
6.25W (Ta), 104W (Tc)
-
SIR584DP-T1-RE3
N-CHANNEL 80 V (D-S) MOSFET POWE
1+
$1.5541
5+
$1.4677
10+
$1.3814
Quantity
1,381 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
TrenchFET® Gen V
-
4V @ 250µA
PowerPAK® SO-8
PowerPAK® SO-8
80 V
24.7A (Ta), 100A (Tc)
7.5V, 10V
3.9mOhm @ 15A, 10V
56 nC @ 10 V
±20V
2800 pF @ 40 V
5W (Ta), 83.3W (Tc)
-
SIR582DP-T1-RE3
N-CHANNEL 80 V (D-S) MOSFET POWE
1+
$50.7042
5+
$47.8873
10+
$45.0704
Quantity
500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
TrenchFET® Gen V
-
4V @ 250µA
PowerPAK® SO-8
PowerPAK® SO-8
80 V
28.9A (Ta), 116A (Tc)
7.5V, 10V
3.4mOhm @ 15A, 10V
67 nC @ 10 V
±20V
3360 pF @ 40 V
5.6W (Ta), 92.5W (Tc)
-
SIDR5102EP-T1-RE3
N-CHANNEL 100 V (D-S) 175C MOSFE
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
TrenchFET® Gen V
-
4V @ 250µA
PowerPAK® SO-8
PowerPAK® SO-8DC
100 V
28.2A (Ta), 126A (Tc)
7.5V, 10V
4.1mOhm @ 20A, 10V
51 nC @ 10 V
±20V
2850 pF @ 50 V
7.5W (Ta), 150W (Tc)
-
SIR588DP-T1-RE3
N-CHANNEL 80 V (D-S) MOSFET POWE
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
TrenchFET® Gen V
-
4V @ 250µA
PowerPAK® SO-8
PowerPAK® SO-8
80 V
17.2A (Ta), 59.5A (Tc)
7.5V, 10V
8mOhm @ 10A, 10V
28.5 nC @ 10 V
±20V
1380 pF @ 40 V
5W (Ta), 59.5W (Tc)
-
SISS588DN-T1-GE3
N-CHANNEL 80 V (D-S) MOSFET POWE
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
TrenchFET® Gen V
-
4V @ 250µA
PowerPAK® 1212-8S
PowerPAK® 1212-8S
80 V
16.9A (Ta), 58.1A (Tc)
7.5V, 10V
8mOhm @ 10A, 10V
28.5 nC @ 10 V
±20V
1380 pF @ 40 V
4.8W (Ta), 56.8W (Tc)
-
SIDR570EP-T1-RE3
N-CHANNEL 150 V (D-S) 175C MOSFE
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
TrenchFET® Gen V
-
4V @ 250µA
PowerPAK® SO-8
PowerPAK® SO-8DC
150 V
30.8A (Ta), 90.9A (Tc)
7.5V, 10V
7.9mOhm @ 20A, 10V
71 nC @ 10 V
±20V
3740 pF @ 75 V
7.5W (Ta), 150W (Tc)
-
SIDR510EP-T1-RE3
N-CHANNEL 100 V (D-S) 175C MOSFE
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
TrenchFET® Gen V
-
4V @ 250µA
PowerPAK® SO-8
PowerPAK® SO-8DC
100 V
33A (Ta), 148A (Tc)
7.5V, 10V
3.6mOhm @ 20A, 10V
81 nC @ 10 V
±20V
4980 pF @ 50 V
7.5W (Ta), 150W (Tc)
-
SIDR578EP-T1-RE3
N-CHANNEL 150 V (D-S) 175C MOSFE
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
TrenchFET® Gen V
-
4V @ 250µA
PowerPAK® SO-8
PowerPAK® SO-8DC
150 V
17.4A (Ta), 78A (Tc)
7.5V, 10V
8.8mOhm @ 20A, 10V
49 nC @ 10 V
±20V
2540 pF @ 75 V
7.5W (Ta), 150W (Tc)
-
SISS52DN-T1-GE3
MOSFET N-CH 30V 47.1A/162A PPAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
TrenchFET® Gen V
-
2.2V @ 250µA
PowerPAK® 1212-8SH
PowerPAK® 1212-8SH
30 V
47.1A (Ta), 162A (Tc)
4.5V, 10V
1.2mOhm @ 20A, 10V
65 nC @ 10 V
+16V, -12V
2950 pF @ 15 V
4.8W (Ta), 57W (Tc)
-
SIDR5802EP-T1-RE3
N-CHANNEL 80 V (D-S) 175C MOSFET
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
TrenchFET® Gen V
-
4V @ 250µA
PowerPAK® SO-8
PowerPAK® SO-8DC
80 V
34.2A (Ta), 153A (Tc)
7.5V, 10V
2.9mOhm @ 20A, 10V
60 nC @ 10 V
±20V
3020 pF @ 40 V
7.5W (Ta), 150W (Tc)
-
SIDR500EP-T1-RE3
N-CHANNEL 30 V (D-S) 175C MOSFET
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
TrenchFET® Gen V
-
2.2V @ 250µA
PowerPAK® SO-8
PowerPAK® SO-8DC
30 V
94A (Ta), 421A (Tc)
4.5V, 10V
0.47mOhm @ 20A, 10V
180 nC @ 10 V
+16V, -12V
8960 pF @ 15 V
7.5W (Ta), 150W (Tc)
-
SIR586DP-T1-RE3
N-CHANNEL 80 V (D-S) MOSFET POWE
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
TrenchFET® Gen V
-
4V @ 250µA
PowerPAK® SO-8
PowerPAK® SO-8
80 V
20.7A (Ta), 78.4A (Tc)
7.5V, 10V
5.8mOhm @ 10A, 10V
38 nC @ 10 V
±20V
1905 pF @ 40 V
5W (Ta), 71.4W (Tc)
-
SIR5102DP-T1-RE3
N-CHANNEL 100 V (D-S) MOSFET POW
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
TrenchFET® Gen V
-
4V @ 250µA
PowerPAK® SO-8
PowerPAK® SO-8
100 V
27A (Ta), 110A (Tc)
7.5V, 10V
4.1mOhm @ 20A, 10V
51 nC @ 10 V
±20V
2850 pF @ 50 V
6.25W (Ta), 104W (Tc)
-
SISH536DN-T1-GE3
N-CHANNEL 30 V (D-S) MOSFET POWE
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
TrenchFET® Gen V
-
2.2V @ 250µA
PowerPAK® 1212-8SH
PowerPAK® 1212-8SH
30 V
24.7A (Ta), 67.4A (Tc)
4.5V, 10V
3.25mOhm @ 10A, 10V
25 nC @ 10 V
+16V, -12V
1150 pF @ 15 V
3.57W (Ta), 26.5W (Tc)
-
SISS54DN-T1-GE3
N-CHANNEL 30-V (D-S) MOSFET POWE
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
TrenchFET® Gen V
-
2.2V @ 250µA
PowerPAK® 1212-8S
PowerPAK® 1212-8S
30 V
51.1A (Ta), 185.6A (Tc)
4.5V, 10V
1.06mOhm @ 20A, 10V
72 nC @ 10 V
+16V, -12V
3450 pF @ 15 V
5W (Ta), 65.7W (Tc)
-
SIR500DP-T1-RE3
N-CHANNEL 30 V (D-S) 150C MOSFET
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
TrenchFET® Gen V
-
2.2V @ 250µA
PowerPAK® SO-8
PowerPAK® SO-8
30 V
85.9A (Ta), 350.8A (Tc)
4.5V, 10V
0.47mOhm @ 20A, 10V
180 nC @ 10 V
+16V, -12V
8960 pF @ 15 V
6.25W (Ta), 104.1W (Tc)
-
SIR5802DP-T1-RE3
N-CHANNEL 80 V (D-S) MOSFET POWE
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
TrenchFET® Gen V
-
4V @ 250µA
PowerPAK® SO-8
PowerPAK® SO-8
80 V
33.6A (Ta), 137.5A (Tc)
7.5V, 10V
2.9mOhm @ 20A, 10V
60 nC @ 10 V
±20V
3020 pF @ 40 V
6.25W (Ta), 104W (Tc)
-
SIR572DP-T1-RE3
N-CHANNEL 150 V (D-S) MOSFET POW
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
TrenchFET® Gen V
-
4V @ 250µA
PowerPAK® SO-8
PowerPAK® SO-8
150 V
14.8A (Ta), 59.7A (Tc)
7.5V, 10V
10.8mOhm @ 10A, 10V
54 nC @ 10 V
±20V
2733 pF @ 75 V
5.7W (Ta), 92.5W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.