FDmesh™ II Series, Single FETs, MOSFETs

Results:
65
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Operating Temperature
Grade
Mounting Type
Vgs(th) (Max) @ Id
Qualification
Vgs (Max)
FET Feature
FET Type
Technology
Drive Voltage (Max Rds On, Min Rds On)
Results remaining65
Applied Filters:
FDmesh™ II
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypeSupplier Device PackageOperating TemperaturePackage / CaseGradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
STF13NM60ND
MOSFET N-CH 600V 11A TO220FP
1+
$0.8873
5+
$0.8380
10+
$0.7887
Quantity
25,150 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220FP
150°C (TJ)
TO-220-3 Full Pack
-
MOSFET (Metal Oxide)
-
11A (Tc)
5V @ 250µA
FDmesh™ II
600 V
10V
380mOhm @ 5.5A, 10V
24.5 nC @ 10 V
±25V
845 pF @ 50 V
25W (Tc)
-
STF34NM60ND
MOSFET N-CH 600V 29A TO220FP
1+
$4.5634
5+
$4.3099
10+
$4.0563
Quantity
18,419 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220FP
150°C (TJ)
TO-220-3 Full Pack
-
MOSFET (Metal Oxide)
-
29A (Tc)
5V @ 250µA
FDmesh™ II
600 V
10V
110mOhm @ 14.5A, 10V
80.4 nC @ 10 V
±25V
2785 pF @ 50 V
40W (Tc)
-
STB34NM60ND
MOSFET N-CH 600V 29A D2PAK
1+
$4.0563
5+
$3.8310
10+
$3.6056
Quantity
15,885 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263 (D2Pak)
150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
MOSFET (Metal Oxide)
-
29A (Tc)
5V @ 250µA
FDmesh™ II
600 V
10V
110mOhm @ 14.5A, 10V
80.4 nC @ 10 V
±25V
2785 pF @ 50 V
190W (Tc)
-
STB12NM50ND
MOSFET N-CH 500V 11A D2PAK
1+
$3.0423
5+
$2.8732
10+
$2.7042
Quantity
13,977 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263 (D2Pak)
150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
MOSFET (Metal Oxide)
-
11A (Tc)
5V @ 250µA
FDmesh™ II
500 V
10V
380mOhm @ 5.5A, 10V
30 nC @ 10 V
±25V
850 pF @ 50 V
100W (Tc)
-
STD10NM60ND
MOSFET N-CH 600V 8A DPAK
1+
$0.9000
5+
$0.8500
10+
$0.8000
Quantity
12,500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
DPAK
-55°C ~ 150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
-
MOSFET (Metal Oxide)
-
8A (Tc)
5V @ 250µA
FDmesh™ II
600 V
10V
600mOhm @ 4A, 10V
20 nC @ 10 V
±25V
577 pF @ 50 V
70W (Tc)
-
STB15NM60ND
MOSFET N-CH 600V 14A D2PAK
1+
$2.7887
5+
$2.6338
10+
$2.4789
Quantity
8,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
D2PAK
150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
MOSFET (Metal Oxide)
-
14A (Tc)
5V @ 250µA
FDmesh™ II
600 V
10V
299mOhm @ 7A, 10V
40 nC @ 10 V
±25V
1250 pF @ 50 V
125W (Tc)
-
STD11NM60ND
MOSFET N-CH 600V 10A DPAK
1+
$4.5634
5+
$4.3099
10+
$4.0563
Quantity
5,986 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
DPAK
150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
-
MOSFET (Metal Oxide)
-
10A (Tc)
5V @ 250µA
FDmesh™ II
600 V
10V
450mOhm @ 5A, 10V
30 nC @ 10 V
±25V
850 pF @ 50 V
90W (Tc)
-
STD12NM50ND
MOSFET N-CH 500V 11A DPAK
1+
$8.8732
5+
$8.3803
10+
$7.8873
Quantity
5,971 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
DPAK
150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
-
MOSFET (Metal Oxide)
-
11A (Tc)
5V @ 250µA
FDmesh™ II
500 V
10V
380mOhm @ 5.5A, 10V
30 nC @ 10 V
±25V
850 pF @ 50 V
100W (Tc)
-
STW30NM60ND
MOSFET N-CH 600V 25A TO247-3
1+
$6.3380
5+
$5.9859
10+
$5.6338
Quantity
5,970 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
150°C (TJ)
TO-247-3
-
MOSFET (Metal Oxide)
-
25A (Tc)
5V @ 250µA
FDmesh™ II
600 V
10V
130mOhm @ 12.5A, 10V
100 nC @ 10 V
±25V
2800 pF @ 50 V
190W (Tc)
-
STD13NM60ND
MOSFET N-CH 600V 11A DPAK
1+
$3.2958
5+
$3.1127
10+
$2.9296
Quantity
5,916 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
DPAK
150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
-
MOSFET (Metal Oxide)
-
11A (Tc)
5V @ 250µA
FDmesh™ II
600 V
10V
380mOhm @ 5.5A, 10V
24.5 nC @ 10 V
±25V
845 pF @ 50 V
109W (Tc)
-
STW34NM60ND
MOSFET N-CH 600V 29A TO247
1+
$10.6479
5+
$10.0563
10+
$9.4648
Quantity
2,400 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
150°C (TJ)
TO-247-3
-
MOSFET (Metal Oxide)
-
29A (Tc)
5V @ 250µA
FDmesh™ II
600 V
10V
110mOhm @ 14.5A, 10V
80.4 nC @ 10 V
±25V
2785 pF @ 50 V
190W (Tc)
-
STP11NM60ND
MOSFET N-CH 600V 10A TO220AB
1+
$10.1408
5+
$9.5775
10+
$9.0141
Quantity
2,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220
150°C (TJ)
TO-220-3
-
MOSFET (Metal Oxide)
-
10A (Tc)
5V @ 250µA
FDmesh™ II
600 V
10V
450mOhm @ 5A, 10V
30 nC @ 10 V
±25V
850 pF @ 50 V
90W (Tc)
-
STB18NM60ND
MOSFET N-CH 600V 13A D2PAK
1+
$5.0704
5+
$4.7887
10+
$4.5070
Quantity
1,870 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263 (D2Pak)
150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
MOSFET (Metal Oxide)
-
13A (Tc)
5V @ 250µA
FDmesh™ II
600 V
10V
290mOhm @ 6.5A, 10V
34 nC @ 10 V
±25V
1030 pF @ 50 V
110W (Tc)
-
STB36NM60ND
MOSFET N-CH 600V 29A D2PAK
1+
$6.5915
5+
$6.2254
10+
$5.8592
Quantity
1,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263 (D2Pak)
150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Automotive
MOSFET (Metal Oxide)
-
29A (Tc)
5V @ 250µA
FDmesh™ II
600 V
10V
110mOhm @ 14.5A, 10V
80.4 nC @ 10 V
±25V
2785 pF @ 50 V
190W (Tc)
AEC-Q101
STP25NM60ND
MOSFET N-CH 600V 21A TO220AB
1+
$4.5634
5+
$4.3099
10+
$4.0563
Quantity
759 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220
150°C (TJ)
TO-220-3
-
MOSFET (Metal Oxide)
-
21A (Tc)
5V @ 250µA
FDmesh™ II
600 V
10V
160mOhm @ 10.5A, 10V
80 nC @ 10 V
±25V
2400 pF @ 50 V
160W (Tc)
-
STW55NM60ND
MOSFET N-CH 600V 51A TO247-3
1+
$15.2113
5+
$14.3662
10+
$13.5211
Quantity
716 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
150°C (TJ)
TO-247-3
-
MOSFET (Metal Oxide)
-
51A (Tc)
5V @ 250µA
FDmesh™ II
600 V
10V
60mOhm @ 25.5A, 10V
190 nC @ 10 V
±25V
5800 pF @ 50 V
350W (Tc)
-
STF12NM50ND
MOSFET N-CH 500V 11A TO220FP
1+
$3.0423
5+
$2.8732
10+
$2.7042
Quantity
259 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220FP
150°C (TJ)
TO-220-3 Full Pack
-
MOSFET (Metal Oxide)
-
11A (Tc)
5V @ 250µA
FDmesh™ II
500 V
10V
380mOhm @ 5.5A, 10V
30 nC @ 10 V
±25V
850 pF @ 50 V
25W (Tc)
-
STP23NM60ND
MOSFET N-CH 600V 19.5A TO220AB
1+
$2.5352
5+
$2.3944
10+
$2.2535
Quantity
194 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220
150°C (TJ)
TO-220-3
-
MOSFET (Metal Oxide)
-
19.5A (Tc)
5V @ 250µA
FDmesh™ II
600 V
10V
180mOhm @ 10A, 10V
69 nC @ 10 V
±25V
2100 pF @ 50 V
150W (Tc)
-
STF11NM60ND
MOSFET N-CH 600V 10A TO220FP
1+
$1.2676
5+
$1.1972
10+
$1.1268
Quantity
160 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220FP
-55°C ~ 150°C (TJ)
TO-220-3 Full Pack
-
MOSFET (Metal Oxide)
-
10A (Tc)
5V @ 250µA
FDmesh™ II
600 V
10V
450mOhm @ 5A, 10V
30 nC @ 10 V
±25V
850 pF @ 50 V
25W (Tc)
-
STW25NM60ND
MOSFET N-CH 600V 21A TO247-3
1+
$25.3521
5+
$23.9437
10+
$22.5352
Quantity
90 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
150°C (TJ)
TO-247-3
-
MOSFET (Metal Oxide)
-
21A (Tc)
5V @ 250µA
FDmesh™ II
600 V
10V
160mOhm @ 10.5A, 10V
80 nC @ 10 V
±25V
2400 pF @ 50 V
160W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.