Dual Cool™ Series, Single FETs, MOSFETs

Results:
4
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
FET Feature
FET Type
Grade
Qualification
Technology
Vgs (Max)
Results remaining4
Applied Filters:
Dual Cool™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypeOperating TemperatureGradePackage / CaseTechnologyFET FeatureSeriesDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackageQualification
NTMTSC4D3N15MC
SINGLE N-CHANNEL POWER MOSFET 15
1+
$9.1394
5+
$8.6317
10+
$8.1239
Quantity
6,185 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount, Wettable Flank
N-Channel
-55°C ~ 175°C (TJ)
-
8-PowerTDFN
MOSFET (Metal Oxide)
-
Dual Cool™
150 V
22A (Ta), 174A (Tc)
8V, 10V
4.45mOhm @ 95A, 10V
4.5V @ 521µA
79 nC @ 10 V
±20V
6514 pF @ 75 V
5W (Ta), 293W (Tc)
8-TDFNW (8.3x8.4)
-
NTMFSC004N08MC
MOSFET N-CH 80V 86A/136A 8DFN
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
-55°C ~ 150°C (TJ)
-
8-PowerVDFN
MOSFET (Metal Oxide)
-
Dual Cool™
80 V
86A (Ta), 136A (Tc)
6V, 10V
4mOhm @ 44A, 10V
4V @ 250µA
43.4 nC @ 10 V
±20V
2980 pF @ 40 V
51W (Ta), 127W (Tc)
8-DFN (5x6.15)
-
NTMFSC010N08M7
MOSFET N-CHANNEL 80V 61A
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
-55°C ~ 150°C (TJ)
-
8-PowerVDFN
MOSFET (Metal Oxide)
-
Dual Cool™
40 V
12.5A (Ta), 61A (Tc)
10V
10mOhm @ 10A, 10V
4.5V @ 120µA
38 nC @ 10 V
±20V
2700 pF @ 40 V
3.3W (Ta), 78.1W (Tc)
8-DFN (5x6.15)
-
NTMTSC1D5N08MC
MOSFET N-CH 80V 33A/287A 8DFNW
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount, Wettable Flank
N-Channel
-55°C ~ 150°C (TJ)
-
8-PowerTDFN
MOSFET (Metal Oxide)
-
Dual Cool™
80 V
33A (Ta), 287A (Tc)
6V, 10V
1.56mOhm @ 80A, 10V
4V @ 650µA
140 nC @ 10 V
±20V
10400 pF @ 40 V
3.3W (Ta), 250W (Tc)
8-TDFNW (8.3x8.4)
-

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.