AlphaSGT2™ Series, Single FETs, MOSFETs

Results:
7
Manufacturer
Series
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Supplier Device Package
Power Dissipation (Max)
Package / Case
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Vgs(th) (Max) @ Id
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
Mounting Type
Drain to Source Voltage (Vdss)
FET Feature
FET Type
Grade
Qualification
Technology
Vgs (Max)
Results remaining7
Applied Filters:
AlphaSGT2™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypeOperating TemperatureGradeTechnologyFET FeatureVgs(th) (Max) @ IdPackage / CaseSupplier Device PackageDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Gate Charge (Qg) (Max) @ VgsVgs (Max)QualificationSeriesCurrent - Continuous Drain (Id) @ 25°CInput Capacitance (Ciss) (Max) @ VdsRds On (Max) @ Id, VgsPower Dissipation (Max)
AONS66811
1+
$2.5352
5+
$2.3944
10+
$2.2535
Quantity
3,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
3.8V @ 250µA
8-PowerSMD, Flat Leads
8-DFN (5x6)
80 V
5V, 10V
110 nC @ 10 V
±20V
-
AlphaSGT2™
41A (Ta), 200A (Tc)
5750 pF @ 40 V
2.5mOhm @ 20A, 8V
7.5W (Ta), 258W (Tc)
AOB66811L
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
3.8V @ 250µA
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
80 V
8V, 10V
110 nC @ 10 V
±20V
-
AlphaSGT2™
44A (Ta), 140A (Tc)
5750 pF @ 40 V
2.7mOhm @ 20A, 10V
10W (Ta), 310W (Tc)
AONR66820
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
4.1V @ 250µA
8-PowerWDFN
8-DFN-EP (3.3x3.3)
80 V
8V, 10V
50 nC @ 10 V
±20V
-
AlphaSGT2™
17A (Ta), 50A (Tc)
1950 pF @ 40 V
8.8mOhm @ 17A, 8V
4.1W (Ta), 104W (Tc)
AOSP66925
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
2.6V @ 250µA
8-SOIC (0.154", 3.90mm Width)
8-SOIC
100 V
4.5V, 10V
33 nC @ 10 V
±20V
-
AlphaSGT2™
11A (Ta)
1590 pF @ 50 V
12.5mOhm @ 11A, 10V
3.1W (Ta)
AONS66817
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
3.8V @ 250µA
8-PowerSMD, Flat Leads
8-DFN (5x6)
80 V
8V, 10V
54 nC @ 10 V
±20V
-
AlphaSGT2™
28A (Ta), 120A (Tc)
2860 pF @ 40 V
4.1mOhm @ 20A, 10V
6.2W (Ta), 113W (Tc)
AOT66811L
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
3.8V @ 250µA
TO-220-3
TO-220
80 V
8V, 10V
110 nC @ 10 V
±20V
-
AlphaSGT2™
43A (Ta), 120A (Tc)
5750 pF @ 40 V
3mOhm @ 20A, 10V
10W (Ta), 310W (Tc)
AOTF66811L
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
3.8V @ 250µA
TO-220-3 Full Pack
TO-220F
80 V
8V, 10V
110 nC @ 10 V
±20V
-
AlphaSGT2™
39A (Ta), 80A (Tc)
5750 pF @ 40 V
3mOhm @ 20A, 10V
8.3W (Ta), 34W (Tc)

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.