OptiMOS™ Series, Single FETs, MOSFETs

Results:
1,703
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Operating Temperature
FET Feature
Mounting Type
FET Type
Grade
Qualification
Technology
Configuration
Power - Max
Results remaining1,703
Applied Filters:
OptiMOS™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypePackage / CasePower - MaxOperating TemperatureSeriesTechnologyFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsSupplier Device PackageQualificationGradeConfiguration
IPG20N06S4L11ATMA1
IPG20N06 - 55V-60V N-CHANNEL AUT
1+
$2.2817
5+
$2.1549
10+
$2.0282
Quantity
14,543 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
65W
-55°C ~ 175°C (TJ)
OptiMOS™
MOSFET (Metal Oxide)
Logic Level Gate
60V
20A
11.2mOhm @ 17A, 10V
2.2V @ 28µA
53nC @ 10V
4020pF @ 25V
PG-TDSON-8-4
AEC-Q101
Automotive
2 N-Channel (Dual)
IPP06CN10NGXKSA1
MOSFET N-CH 100V 100A TO220-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
-55°C ~ 175°C (TJ)
OptiMOS™
MOSFET (Metal Oxide)
-
100 V
100A (Tc)
6.5mOhm @ 100A, 10V
4V @ 180µA
139 nC @ 10 V
9200 pF @ 50 V
PG-TO220-3
ISP06P005LSATMA1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-261-4, TO-261AA
-
OptiMOS™
MOSFET (Metal Oxide)
-
-
-
-
-
-
-
PG-SOT223
BSC0906NSE8189ATMA1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerTDFN
-55°C ~ 150°C (TJ)
OptiMOS™
MOSFET (Metal Oxide)
-
30 V
18A (Ta), 63A (Tc)
4.5mOhm @ 30A, 10V
2V @ 250µA
18 nC @ 10 V
1200 pF @ 15 V
PG-TDSON-8-34
IPP90N04S402AKSA1
MOSFET N-CH 40V 90A TO220-3-1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
-55°C ~ 175°C (TJ)
OptiMOS™
MOSFET (Metal Oxide)
-
40 V
90A (Tc)
2.5mOhm @ 90A, 10V
4V @ 95µA
118 nC @ 10 V
9430 pF @ 25 V
PG-TO220-3-1
ISP06P005NSATMA1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-261-4, TO-261AA
-
OptiMOS™
MOSFET (Metal Oxide)
-
-
-
-
-
-
-
PG-SOT223
IPI032N06N3GE8214AKSA1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-262-3 Long Leads, I²Pak, TO-262AA
-55°C ~ 175°C (TJ)
OptiMOS™
MOSFET (Metal Oxide)
-
60 V
120A (Tc)
3.2mOhm @ 100A, 10V
4V @ 118µA
165 nC @ 10 V
13000 pF @ 30 V
PG-TO262-3-1
IPS050N03LGBKMA1
MOSFET N-CHANNEL 30V 50A TO251-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-251-3 Stub Leads, IPak
-55°C ~ 175°C (TJ)
OptiMOS™
MOSFET (Metal Oxide)
-
30 V
50A (Tc)
5mOhm @ 30A, 10V
2.2V @ 250µA
31 nC @ 10 V
3200 pF @ 15 V
PG-TO251-3-11
IPS060N03LGBKMA1
MOSFET N-CHANNEL 30V 50A TO251-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-251-3 Stub Leads, IPak
-55°C ~ 175°C (TJ)
OptiMOS™
MOSFET (Metal Oxide)
-
30 V
50A (Tc)
6mOhm @ 30A, 10V
2.2V @ 250µA
23 nC @ 10 V
2400 pF @ 15 V
PG-TO251-3-11
IPS075N03LGBKMA1
MOSFET N-CHANNEL 30V 50A TO251-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-251-3 Stub Leads, IPak
-55°C ~ 175°C (TJ)
OptiMOS™
MOSFET (Metal Oxide)
-
30 V
50A (Tc)
7.5mOhm @ 30A, 10V
2.2V @ 250µA
18 nC @ 10 V
1900 pF @ 15 V
PG-TO251-3-11
IPS090N03LGBKMA1
MOSFET N-CHANNEL 30V 40A TO251-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-251-3 Stub Leads, IPak
-55°C ~ 175°C (TJ)
OptiMOS™
MOSFET (Metal Oxide)
-
30 V
40A (Tc)
9mOhm @ 30A, 10V
2.2V @ 250µA
15 nC @ 10 V
1600 pF @ 15 V
PG-TO251-3-11
IPP35CN10NGXKSA1
MOSFET N-CH 100V 27A TO220-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
-55°C ~ 175°C (TJ)
OptiMOS™
MOSFET (Metal Oxide)
-
100 V
27A (Tc)
35mOhm @ 27A, 10V
4V @ 29µA
24 nC @ 10 V
1570 pF @ 50 V
PG-TO220-3
ISP06P008NSATMA1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-261-4, TO-261AA
-
OptiMOS™
MOSFET (Metal Oxide)
-
-
-
-
-
-
-
PG-SOT223
IPD06P005LATMA1
MOSFET P-CH 60V 6.5A TO252-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
-55°C ~ 175°C (TJ)
OptiMOS™
MOSFET (Metal Oxide)
-
60 V
6.5A (Tc)
250mOhm @ 6.5A, 10V
2V @ 270µA
13.8 nC @ 10 V
420 pF @ 30 V
PG-TO252-3
IPD06P007NATMA1
MOSFET P-CH 60V 4.3A TO252-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
-55°C ~ 175°C (TJ)
OptiMOS™
MOSFET (Metal Oxide)
-
60 V
4.3A (Tc)
400mOhm @ 4.3A, 10V
4V @ 166µA
6.7 nC @ 10 V
260 pF @ 30 V
PG-TO252-3
IPP12CN10NGXKSA1
MOSFET N-CH 100V 67A TO220-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
-55°C ~ 175°C (TJ)
OptiMOS™
MOSFET (Metal Oxide)
-
100 V
67A (Tc)
12.9mOhm @ 67A, 10V
4V @ 83µA
65 nC @ 10 V
4320 pF @ 50 V
PG-TO220-3
IPB070N06N G
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
OptiMOS™
MOSFET (Metal Oxide)
-
60 V
80A (Tc)
6.7mOhm @ 80A, 10V
4V @ 180µA
126 nC @ 10 V
4300 pF @ 30 V
PG-TO263-3
-
-
IPB091N06N G
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
OptiMOS™
MOSFET (Metal Oxide)
-
60 V
80A (Tc)
8.8mOhm @ 80A, 10V
4V @ 130µA
81 nC @ 10 V
2800 pF @ 30 V
PG-TO263-3
-
-
IPP091N06N G
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
-
OptiMOS™
MOSFET (Metal Oxide)
-
60 V
80A (Tc)
9.1mOhm @ 80A, 10V
4V @ 130µA
81 nC @ 10 V
2800 pF @ 30 V
PG-TO220-3
-
-
IPC014N03L3X1SA1
MOSFET N-CH 30V 2A SAWN ON FOIL
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
Die
-
OptiMOS™
MOSFET (Metal Oxide)
-
30 V
2A (Tj)
50mOhm @ 2A, 10V
2.2V @ 250µA
-
-
Sawn on foil
-
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.