STripFET™ H6 Series, Single FETs, MOSFETs

Results:
16
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Supplier Device Package
Vgs(th) (Max) @ Id
Operating Temperature
Package / Case
Vgs (Max)
FET Type
Grade
Mounting Type
Qualification
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
Drain to Source Voltage (Vdss)
Technology
Results remaining16
Applied Filters:
STripFET™ H6
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypePackage / CaseSupplier Device PackageFET TypeOperating TemperatureDrain to Source Voltage (Vdss)GradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSeriesDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
STR2P3LLH6
MOSFET P-CH 30V 2A SOT-23
1+
$2.2817
5+
$2.1549
10+
$2.0282
Quantity
41,950 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
P-Channel
150°C (TJ)
30 V
-
MOSFET (Metal Oxide)
-
2A (Ta)
2.5V @ 250µA
STripFET™ H6
4.5V, 10V
56mOhm @ 1A, 10V
6 nC @ 4.5 V
±20V
639 pF @ 25 V
350mW (Tc)
-
STL6P3LLH6
MOSFET P-CH 30V 6A POWERFLAT
1+
$0.7352
5+
$0.6944
10+
$0.6535
Quantity
22,409 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
PowerFlat™ (3.3x3.3)
P-Channel
150°C (TJ)
30 V
-
MOSFET (Metal Oxide)
-
6A (Tc)
1V @ 250µA (Min)
STripFET™ H6
4.5V, 10V
30mOhm @ 3A, 10V
12 nC @ 4.5 V
±20V
1450 pF @ 25 V
2.9W (Tc)
-
STL9P3LLH6
MOSFET P-CH 30V 9A POWERFLAT
1+
$1.0141
5+
$0.9577
10+
$0.9014
Quantity
12,750 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
PowerFlat™ (3.3x3.3)
P-Channel
-55°C ~ 150°C (TJ)
30 V
-
MOSFET (Metal Oxide)
-
9A (Tc)
1V @ 250µA (Min)
STripFET™ H6
4.5V, 10V
15mOhm @ 4.5A, 10V
24 nC @ 4.5 V
±20V
2615 pF @ 25 V
3W (Ta)
-
STD28P3LLH6AG
MOSFET P-CH 30V 12A DPAK
1+
$1.2676
5+
$1.1972
10+
$1.1268
Quantity
10,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
P-Channel
150°C (TJ)
30 V
Automotive
MOSFET (Metal Oxide)
-
12A (Tc)
2.5V @ 250µA
STripFET™ H6
4.5V, 10V
30mOhm @ 6A, 10V
29 nC @ 10 V
±18V
1480 pF @ 25 V
33W (Tc)
AEC-Q101
STD95P3LLH6AG
MOSFET N-CH 30V 80A DPAK
1+
$15.2113
5+
$14.3662
10+
$13.5211
Quantity
1,843 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
P-Channel
-55°C ~ 150°C (TJ)
30 V
Automotive
MOSFET (Metal Oxide)
-
80A (Tc)
2.5V @ 250µA
STripFET™ H6
4.5V, 10V
6.9mOhm @ 40A, 10V
113 nC @ 10 V
±18V
6250 pF @ 25 V
104W (Tc)
AEC-Q101
STL62P3LLH6
MOSFET P-CH 30V 62A POWERFLAT
1+
$0.7606
5+
$0.7183
10+
$0.6761
Quantity
1,259 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
PowerFlat™ (5x6)
P-Channel
175°C (TJ)
30 V
-
MOSFET (Metal Oxide)
-
62A (Tc)
1V @ 250µA (Min)
STripFET™ H6
4.5V, 10V
10.5mOhm @ 7A, 10V
33 nC @ 4.5 V
±20V
3350 pF @ 25 V
100W (Tc)
-
STS10P3LLH6
MOSFET P-CH 30V 10A 8SO
1+
$6.3380
5+
$5.9859
10+
$5.6338
Quantity
890 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
P-Channel
-55°C ~ 150°C (TJ)
30 V
-
MOSFET (Metal Oxide)
-
10A (Ta)
1V @ 250µA (Min)
STripFET™ H6
4.5V, 10V
12mOhm @ 5A, 10V
33 nC @ 4.5 V
±20V
3350 pF @ 25 V
2.7W (Ta)
-
STD40P3LLH6
MOSFET P-CH 30V 40A DPAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
P-Channel
-55°C ~ 175°C (TJ)
30 V
-
MOSFET (Metal Oxide)
-
40A (Tc)
2.5V @ 250µA
STripFET™ H6
4.5V, 10V
15mOhm @ 20A, 10V
24 nC @ 4.5 V
±20V
2615 pF @ 25 V
60W (Tc)
-
STS9P3LLH6
MOSFET P-CH 30V 9A 8SO
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
P-Channel
-55°C ~ 150°C (TJ)
30 V
-
MOSFET (Metal Oxide)
-
9A (Ta)
2V @ 250µA
STripFET™ H6
4.5V, 10V
15mOhm @ 4.5A, 10V
24 nC @ 4.5 V
±20V
2615 pF @ 25 V
2.7W (Ta)
-
STD37P3H6AG
MOSFET P-CH 30V 49A DPAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
P-Channel
-55°C ~ 175°C (TJ)
30 V
Automotive
MOSFET (Metal Oxide)
-
49A (Tc)
4V @ 250µA
STripFET™ H6
10V
15mOhm @ 25A, 10V
30.6 nC @ 10 V
±20V
1630 pF @ 25 V
60W (Tc)
AEC-Q101
STL260N3LLH6
MOSFET N-CH 30V 260A POWERFLAT
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
PowerFlat™ (5x6)
N-Channel
-55°C ~ 175°C (TJ)
30 V
-
MOSFET (Metal Oxide)
-
260A (Tc)
1V @ 250µA (Min)
STripFET™ H6
4.5V, 10V
1.3mOhm @ 22.5A, 10V
61.5 nC @ 4.5 V
±20V
6375 pF @ 25 V
166W (Tc)
-
STD52P3LLH6
MOSFET P-CH 30V 52A DPAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
P-Channel
175°C (TJ)
30 V
-
MOSFET (Metal Oxide)
-
52A (Tc)
2.5V @ 250µA
STripFET™ H6
4.5V, 10V
12mOhm @ 26A, 10V
33 nC @ 4.5 V
±20V
3350 pF @ 25 V
70W (Tc)
-
STL45P3LLH6
MOSFET P-CH 30V 45A POWERFLAT
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
PowerFlat™ (5x6)
P-Channel
-55°C ~ 175°C (TJ)
30 V
-
MOSFET (Metal Oxide)
-
45A (Tc)
1V @ 250µA
STripFET™ H6
4.5V, 10V
13mOhm @ 6A, 10V
24 nC @ 4.5 V
±20V
2615 pF @ 25 V
4.8W (Ta), 75W (Tc)
-
STL86N3LLH6AG
MOSFET N-CH 30V 80A POWERFLAT
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
PowerFlat™ (5x6)
N-Channel
-55°C ~ 150°C (TJ)
30 V
Automotive
MOSFET (Metal Oxide)
-
80A (Tc)
2.5V @ 250µA
STripFET™ H6
4.5V, 10V
5.2mOhm @ 10.5A, 10V
17 nC @ 4.5 V
±20V
2030 pF @ 25 V
4W (Ta), 60W (Tc)
AEC-Q101
STP52P3LLH6
MOSFET P-CHANNEL 30V 52A TO220
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
TO-220
P-Channel
-
30 V
-
MOSFET (Metal Oxide)
-
52A (Tc)
-
STripFET™ H6
4.5V, 10V
-
-
-
-
70W (Tc)
-
STP160N3LL
MOSFET N-CH 30V 120A TO220
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
TO-220
N-Channel
-55°C ~ 175°C (TJ)
30 V
-
MOSFET (Metal Oxide)
-
120A (Tc)
2.5V @ 250µA
STripFET™ H6
4.5V, 10V
3.2mOhm @ 60A, 10V
42 nC @ 4.5 V
±20V
3500 pF @ 25 V
136W (Tc)
-

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.