StrongIRFET™2 Series, Single FETs, MOSFETs

Results:
22
Manufacturer
Series
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Package / Case
Mounting Type
Drain to Source Voltage (Vdss)
Operating Temperature
FET Feature
FET Type
Grade
Qualification
Technology
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Results remaining22
Applied Filters:
StrongIRFET™2
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypePackage / CaseFET TypeDrain to Source Voltage (Vdss)Operating TemperatureGradeTechnologyFET FeatureSeriesCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackageQualification
IPP014N06NF2SAKMA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
60 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
StrongIRFET™2
39A (Ta), 198A (Tc)
6V, 10V
1.4mOhm @ 100A, 10V
3.3V @ 246µA
305 nC @ 10 V
±20V
13800 pF @ 30 V
3.8W (Ta), 300W (Tc)
PG-TO220-3-U05
-
IPD023N04NF2SATMA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
N-Channel
40 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
StrongIRFET™2
27A (Ta), 143A (Tc)
6V, 10V
2.3mOhm @ 70A, 10V
3.4V @ 81µA
102 nC @ 10 V
±20V
4800 pF @ 20 V
3W (Ta), 150W (Tc)
PG-TO252-3
-
IPD028N06NF2SATMA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
N-Channel
60 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
StrongIRFET™2
24A (Ta), 139A (Tc)
6V, 10V
2.85mOhm @ 70A, 10V
3.3V @ 80µA
102 nC @ 10 V
±20V
4600 pF @ 30 V
3W (Ta), 150W (Tc)
PG-TO252-3
-
IPF010N06NF2SATMA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-7, D²Pak (6 Leads + Tab)
N-Channel
60 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
StrongIRFET™2
44A (Ta), 293A (Tc)
6V, 10V
1.05mOhm @ 100A, 10V
3.3V @ 246µA
305 nC @ 10 V
±20V
13800 pF @ 30 V
3.8W (Ta), 300W (Tc)
PG-TO263-7-U02
-
IPF010N04NF2SATMA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-7, D²Pak (6 Leads + Tab)
N-Channel
40 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
StrongIRFET™2
46A (Ta), 289A (Tc)
6V, 10V
1mOhm @ 100A, 10V
3.4V @ 189µA
239 nC @ 10 V
±20V
11300 pF @ 20 V
3.8W (Ta), 250W (Tc)
PG-TO263-7-U02
-
IPF016N06NF2SATMA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-7, D²Pak (6 Leads + Tab)
N-Channel
60 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
StrongIRFET™2
35A (Ta), 223A (Tc)
6V, 10V
1.7mOhm @ 100A, 10V
3.3V @ 129µA
162 nC @ 10 V
±20V
7300 pF @ 30 V
3.8W (Ta), 188W (Tc)
PG-TO263-7-U02
-
IPD038N06NF2SATMA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
N-Channel
60 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
StrongIRFET™2
20A (Ta), 120A (Tc)
6V, 10V
3.85mOhm @ 60A, 10V
3.3V @ 52µA
68 nC @ 10 V
±20V
3000 pF @ 30 V
3W (Ta), 107W (Tc)
PG-TO252-3
-
IPB011N04NF2SATMA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
N-Channel
40 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
StrongIRFET™2
43A (Ta), 201A (Tc)
6V, 10V
1.15mOhm @ 100A, 10V
3.4V @ 249µA
315 nC @ 10 V
±20V
15000 pF @ 20 V
3.8W (Ta), 375W (Tc)
PG-TO263-3
-
IPF009N04NF2SATMA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-7, D²Pak (6 Leads + Tab)
N-Channel
40 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
StrongIRFET™2
49A (Ta), 302A (Tc)
6V, 10V
0.9mOhm @ 100A, 10V
3.4V @ 249µA
315 nC @ 10 V
±20V
15000 pF @ 20 V
3.8W (Ta), 375W (Tc)
PG-TO263-7-U02
-
IPF012N06NF2SATMA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-7, D²Pak (6 Leads + Tab)
N-Channel
60 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
StrongIRFET™2
41A (Ta), 282A (Tc)
6V, 10V
1.2mOhm @ 100A, 10V
3.3V @ 186µA
233 nC @ 10 V
±20V
10500 pF @ 30 V
3.8W (Ta), 250W (Tc)
PG-TO263-7-U02
-
IPD029N04NF2SATMA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
N-Channel
40 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
StrongIRFET™2
24A (Ta), 131A (Tc)
6V, 10V
2.9mOhm @ 70A, 10V
3.4V @ 53µA
68 nC @ 10 V
±20V
3200 pF @ 20 V
3W (Ta), 107W (Tc)
PG-TO252-3
-
IPB013N06NF2SATMA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
N-Channel
60 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
StrongIRFET™2
40A (Ta), 198A (Tc)
6V, 10V
1.3mOhm @ 100A, 10V
3.3V @ 246µA
305 nC @ 10 V
±20V
13800 pF @ 30 V
3.8W (Ta), 300W (Tc)
PG-TO263-3
-
IPP011N04NF2SAKMA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
40 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
StrongIRFET™2
44A (Ta), 201A (Tc)
6V, 10V
1.15mOhm @ 100A, 10V
3.4V @ 249µA
315 nC @ 10 V
±20V
15000 pF @ 20 V
3.8W (Ta), 375W (Tc)
PG-TO220-3-U05
-
IPB023N04NF2SATMA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
N-Channel
40 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
StrongIRFET™2
30A (Ta), 122A (Tc)
6V, 10V
2.35mOhm @ 70A, 10V
3.4V @ 81µA
102 nC @ 10 V
±20V
4800 pF @ 20 V
3.8W (Ta), 150W (Tc)
PG-TO263-3
-
IPB029N06NF2SATMA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
N-Channel
60 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
StrongIRFET™2
26A (Ta), 120A (Tc)
6V, 10V
2.9mOhm @ 70A, 10V
3.3V @ 80µA
102 nC @ 10 V
±20V
4600 pF @ 30 V
3.8W (Ta), 150W (Tc)
PG-TO263-3
-
IPB018N06NF2SATMA1
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
N-Channel
60 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
StrongIRFET™2
34A (Ta), 187A (Tc)
6V, 10V
1.8mOhm @ 100A, 10V
3.3V @ 129µA
162 nC @ 10 V
±20V
7300 pF @ 30 V
3.8W (Ta), 188W (Tc)
PG-TO263-3
-
IPB015N06NF2SATMA1
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
N-Channel
60 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
StrongIRFET™2
37A (Ta), 195A (Tc)
6V, 10V
1.5mOhm @ 100A, 10V
3.3V @ 186µA
233 nC @ 10 V
±20V
10500 pF @ 30 V
3.8W (Ta), 250W (Tc)
PG-TO263-3
-
IPP026N04NF2SAKMA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
40 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
StrongIRFET™2
29A (Ta), 121A (Tc)
6V, 10V
2.6mOhm @ 70A, 10V
3.4V @ 81µA
102 nC @ 10 V
±20V
4800 pF @ 20 V
3.8W (Ta), 150W (Tc)
PG-TO220-3-U05
-
IPF013N04NF2SATMA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-7, D²Pak (6 Leads + Tab)
N-Channel
40 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
StrongIRFET™2
40A (Ta), 232A (Tc)
6V, 10V
1.35mOhm @ 100A, 10V
3.4V @ 126µA
159 nC @ 10 V
±20V
7500 pF @ 20 V
3.8W (Ta), 188W (Tc)
PG-TO263-7-U02
-
IPB012N04NF2SATMA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
N-Channel
40 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
StrongIRFET™2
41A (Ta), 197A (Tc)
6V, 10V
1.25mOhm @ 100A, 10V
3.4V @ 189µA
239 nC @ 10 V
±20V
11300 pF @ 20 V
3.8W (Ta), 250W (Tc)
PG-TO263-3
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.