SAFeFET™ Series, Single FETs, MOSFETs

Results:
3
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Supplier Device Package
Power Dissipation (Max)
Package / Case
Current - Continuous Drain (Id) @ 25°C
Mounting Type
Vgs(th) (Max) @ Id
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
FET Feature
FET Type
Grade
Drain to Source Voltage (Vdss)
Qualification
Technology
Results remaining3
Applied Filters:
SAFeFET™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypePackage / CaseSupplier Device PackageOperating TemperatureGradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
STB85NS04Z
MOSFET N-CH 33V 80A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
80A (Tc)
4V @ 1mA
SAFeFET™
33 V
10V
15mOhm @ 30A, 10V
100 nC @ 10 V
±18V
2500 pF @ 25 V
215W (Tc)
-
STP180NS04ZC
MOSFET N-CH 33V 120A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
TO-220
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
120A (Tc)
4V @ 1mA
SAFeFET™
33 V
10V
4.2mOhm @ 40A, 10V
110 nC @ 10 V
±20V
4560 pF @ 25 V
330W (Tc)
-
STD70NS04ZL
MOSFET N-CH 33V 70A DPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
70A (Tc)
3V @ 1mA
SAFeFET™
33 V
5V, 10V
10.5mOhm @ 30A, 10V
32 nC @ 5 V
±20V
1800 pF @ 25 V
110W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.