CoolSiC™ Series, Single FETs, MOSFETs

Results:
76
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Input Capacitance (Ciss) (Max) @ Vds
Vgs(th) (Max) @ Id
Supplier Device Package
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
Drain to Source Voltage (Vdss)
Package / Case
FET Feature
FET Type
Grade
Mounting Type
Qualification
Technology
Results remaining76
Applied Filters:
CoolSiC™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypeSeriesOperating TemperatureGradeFET FeatureTechnologyDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Supplier Device PackagePackage / CaseQualificationVgs (Max)Input Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ VgsVgs(th) (Max) @ IdPower Dissipation (Max)
IMDQ75R016M1HXUMA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
CoolSiC™
-55°C ~ 175°C (TJ)
-
-
SiC (Silicon Carbide Junction Transistor)
750 V
98A (Tc)
15V, 20V
PG-HDSOP-22-1
22-PowerBSOP Module
-
+23V, -5V
2869 pF @ 500 V
80 nC @ 18 V
5.6V @ 14.9mA
384W (Tc)
AIMDQ75R016M1HXUMA1
SICFET N-CH 750V PG-HDSOP-22
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
CoolSiC™
-55°C ~ 175°C (TJ)
Automotive
-
SiCFET (Silicon Carbide)
750 V
98A (Tc)
0V, 18V
PG-HDSOP-22
22-PowerBSOP Module
AEC-Q101
+23V, -5V
2869 pF @ 500 V
80 nC @ 18 V
5.6V @ 14.9mA
384W (Tc)
IMDQ75R140M1HXUMA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
CoolSiC™
-55°C ~ 175°C (TJ)
-
-
SiC (Silicon Carbide Junction Transistor)
750 V
17A (Tc)
15V, 20V
PG-HDSOP-22-1
22-PowerBSOP Module
-
+23V, -5V
351 pF @ 500 V
12 nC @ 18 V
5.6V @ 1.7mA
100W (Tc)
IMDQ75R040M1HXUMA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
CoolSiC™
-55°C ~ 175°C (TJ)
-
-
SiC (Silicon Carbide Junction Transistor)
750 V
47A (Tc)
15V, 20V
PG-HDSOP-22-1
22-PowerBSOP Module
-
+23V, -5V
1135 pF @ 500 V
34 nC @ 18 V
5.6V @ 6mA
211W (Tc)
IMBF170R1K0M1XTMA1
SICFET N-CH 1700V 5.2A TO263-7
1+
$40.5634
5+
$38.3099
10+
$36.0563
Quantity
3,400 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
CoolSiC™
-55°C ~ 175°C (TJ)
-
-
SiCFET (Silicon Carbide)
1700 V
5.2A (Tc)
12V, 15V
PG-TO263-7-13
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
-
+20V, -10V
275 pF @ 1000 V
5 nC @ 12 V
5.7V @ 1.1mA
68W (Tc)
IMW120R060M1HXKSA1
SICFET N-CH 1.2KV 36A TO247-3
1+
$13.6217
5+
$12.8649
10+
$12.1082
Quantity
1,666 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
CoolSiC™
-55°C ~ 175°C (TJ)
-
-
SiCFET (Silicon Carbide)
1200 V
36A (Tc)
15V, 18V
PG-TO247-3-41
TO-247-3
-
+23V, -7V
1060 pF @ 800 V
31 nC @ 18 V
5.7V @ 5.6mA
150W (Tc)
IMBG65R022M1HXTMA1
SILICON CARBIDE MOSFET PG-TO263-
1+
$30.8282
5+
$29.1155
10+
$27.4028
Quantity
1,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
CoolSiC™
-55°C ~ 175°C (TJ)
-
-
SiCFET (Silicon Carbide)
650 V
64A (Tc)
18V
PG-TO263-7-12
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
-
+23V, -5V
2288 pF @ 400 V
67 nC @ 18 V
5.7V @ 12.3mA
300W (Tc)
IMW120R030M1HXKSA1
SICFET N-CH 1.2KV 56A TO247-3
1+
$40.5634
5+
$38.3099
10+
$36.0563
Quantity
498 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
CoolSiC™
-55°C ~ 175°C (TJ)
-
-
SiCFET (Silicon Carbide)
1200 V
56A (Tc)
15V, 18V
PG-TO247-3-41
TO-247-3
-
+23V, -7V
2120 pF @ 800 V
63 nC @ 18 V
5.7V @ 10mA
227W (Tc)
IMZ120R045M1XKSA1
SICFET N-CH 1200V 52A TO247-4
1+
$38.0282
5+
$35.9155
10+
$33.8028
Quantity
480 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
CoolSiC™
-55°C ~ 175°C (TJ)
-
Current Sensing
SiCFET (Silicon Carbide)
1200 V
52A (Tc)
15V
PG-TO247-4-1
TO-247-4
-
+20V, -10V
1900 pF @ 800 V
52 nC @ 15 V
5.7V @ 10mA
228W (Tc)
IMZ120R030M1HXKSA1
SICFET N-CH 1.2KV 56A TO247-4
1+
$88.7324
5+
$83.8028
10+
$78.8732
Quantity
480 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
CoolSiC™
-55°C ~ 175°C (TJ)
-
-
SiCFET (Silicon Carbide)
1200 V
56A (Tc)
15V, 18V
PG-TO247-4-1
TO-247-4
-
+23V, -7V
2120 pF @ 800 V
63 nC @ 18 V
5.7V @ 10mA
227W (Tc)
IMZA65R083M1HXKSA1
SILICON CARBIDE MOSFET, PG-TO247
1+
$27.8873
5+
$26.3380
10+
$24.7887
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
CoolSiC™
-55°C ~ 175°C (TJ)
-
-
SiCFET (Silicon Carbide)
650 V
26A (Tc)
18V
PG-TO247-4-3
TO-247-4
-
+20V, -2V
624 pF @ 400 V
19 nC @ 18 V
5.7V @ 3.3mA
104W (Tc)
IMT65R083M1HXUMA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-
CoolSiC™
-
-
-
SiCFET (Silicon Carbide)
650 V
-
18V
PG-HSOF-8-1
8-PowerSFN
-
-
-
-
-
-
IMT65R072M1HXUMA1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-
CoolSiC™
-
-
-
SiCFET (Silicon Carbide)
650 V
-
18V
PG-HSOF-8-1
8-PowerSFN
-
-
-
-
-
-
IMBG65R057M1HXTMA1
SILICON CARBIDE MOSFET PG-TO263-
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
CoolSiC™
-55°C ~ 175°C (TJ)
-
-
SiCFET (Silicon Carbide)
650 V
39A (Tc)
18V
PG-TO263-7-12
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
-
+23V, -5V
930 pF @ 400 V
28 nC @ 18 V
5.7V @ 5mA
161W (Tc)
IMT65R057M1HXUMA1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-
CoolSiC™
-
-
-
SiCFET (Silicon Carbide)
650 V
-
18V
PG-HSOF-8-1
8-PowerSFN
-
-
-
-
-
-
IMT65R048M1HXUMA1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-
CoolSiC™
-
-
-
SiCFET (Silicon Carbide)
650 V
-
18V
PG-HSOF-8-1
8-PowerSFN
-
-
-
-
-
-
IMT65R030M1HXUMA1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-
CoolSiC™
-
-
-
SiCFET (Silicon Carbide)
650 V
-
18V
PG-HSOF-8-1
8-PowerSFN
-
-
-
-
-
-
IMT65R039M1HXUMA1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-
CoolSiC™
-
-
-
SiCFET (Silicon Carbide)
650 V
-
18V
PG-HSOF-8-1
8-PowerSFN
-
-
-
-
-
-
AIMBG120R010M1XTMA1
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
CoolSiC™
-55°C ~ 175°C
-
-
SiCFET (Silicon Carbide)
1200 V
187A
-
PG-TO263-7-12
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
-
-
-
-
-
-
IMW120R220M1HXKSA1
SICFET N-CH 1.2KV 13A TO247-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
CoolSiC™
-55°C ~ 175°C (TJ)
-
-
SiCFET (Silicon Carbide)
1200 V
13A (Tc)
15V, 18V
PG-TO247-3-41
TO-247-3
-
+23V, -7V
289 pF @ 800 V
8.5 nC @ 18 V
5.7V @ 1.6mA
75W (Tc)

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.